AAAAAA
Results: 26-35/35
Authors:
LEECH PW
KEMENY PC
RIDGWAY MC
Citation: Pw. Leech et al., LOW-LOSS CHANNEL WAVE-GUIDES FABRICATED IN FUSED-SILICA BY GERMANIUM ION-IMPLANTATION, Electronics Letters, 31(15), 1995, pp. 1238-1240
Authors:
CLAPHAM L
WHITTON JL
JACKMAN JA
RIDGWAY MC
Citation: L. Clapham et al., HIGH-DOSE PT ION-IMPLANTATION INTO STAINLESS-STEEL THROUGH A SACRIFICIAL CARBON LAYER - CARBON MIXING EFFECTS, Surface & coatings technology, 66(1-3), 1994, pp. 398-402
Authors:
RIDGWAY MC
ELLINGBOE SL
ELLIMAN RG
WILLIAMS JS
Citation: Mc. Ridgway et al., HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF MICROELECTRONIC DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 290-297
Authors:
ELLINGBOE SL
RIDGWAY MC
Citation: Sl. Ellingboe et Mc. Ridgway, A NOVEL-APPROACH TO SECONDARY DEFECT REDUCTION IN SEPARATION BY IMPLANTATION OF OXYGEN MATERIAL, Journal of applied physics, 75(10), 1994, pp. 4939-4947
Authors:
RIDGWAY MC
ELLIMAN RG
HAUSER N
Citation: Mc. Ridgway et al., MEV IN-ION IMPLANTATION FOR ELECTRICAL ISOLATION OF P-INP(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 835-837
Authors:
ZHOU W
SOOD DK
ELLIMAN RG
RIDGWAY MC
Citation: W. Zhou et al., ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1104-1108
Authors:
WILLIAMS JS
ELLIMAN RG
RIDGWAY MC
JAGADISH C
ELLINGBOE SL
GOLDBERG R
PETRAVIC M
WONG WC
DEZHANG Z
NYGREN E
SVENSSON BG
Citation: Js. Williams et al., MEV IMPLANTATION INTO SEMICONDUCTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 507-513
Authors:
ELLINGBOE SL
RIDGWAY MC
Citation: Sl. Ellingboe et Mc. Ridgway, DISORDER IN HIGH-DOSE, HIGH-ENERGY O-IMPLANTED AND SI-IMPLANTED SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 636-639
THE USE OF AN AL SACRIFICIAL LAYER TO IMPROVE RETENTION DURING HIGH-DOSE PT ION-IMPLANTATION INTO NI
Authors:
CLAPHAM L
WHITTON JL
PASCUAL R
RIDGWAY MC
HAUSER N
Citation: L. Clapham et al., THE USE OF AN AL SACRIFICIAL LAYER TO IMPROVE RETENTION DURING HIGH-DOSE PT ION-IMPLANTATION INTO NI, Journal of applied physics, 74(11), 1993, pp. 6619-6624
Authors:
SVENSSON BG
RIDGWAY MC
PETRAVIC M
Citation: Bg. Svensson et al., ISOTOPE EFFECTS FOR MEGA-ELECTRON-VOLT BORON IONS IN AMORPHOUS-SILICON, Journal of applied physics, 73(10), 1993, pp. 4836-4840