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Results:
1-8
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Results: 8
Authors:
SPRENGER M
DING Y
POGANY P
ROENTGEN P
EICHLER HJ
Citation: M. Sprenger et al., PHOTOREFRACTIVE POWER TRANSFER FROM PARALLEL LASER-DIODE AMPLIFIERS INTO A SINGLE OUTPUT BEAM, Optics letters, 22(15), 1997, pp. 1147-1149
Authors:
WEBER S
LIMMER W
THONKE K
SAUER R
PANZLAFF K
BACHER G
MEIER HP
ROENTGEN P
Citation: S. Weber et al., THERMAL CARRIER EMISSION FROM A SEMICONDUCTOR QUANTUM-WELL, Physical review. B, Condensed matter, 52(20), 1995, pp. 14739-14747
Authors:
KOPF D
DERAU JA
KELLER U
BONA GL
ROENTGEN P
Citation: D. Kopf et al., 400-MW CONTINUOUS-WAVE DIODE-PUMPED CR-LISAF LASER-BASED ON A POWER-SCALABLE CONCEPT, Optics letters, 20(17), 1995, pp. 1782-1784
Authors:
KOBAYASHI T
KOJIMA H
DEOL RS
BUCHAN N
HEUBERGER W
JAKUBOWICZ A
ROENTGEN P
Citation: T. Kobayashi et al., THE EFFECT OF PRESSURE ON THE BAND-GAP ENERGY IN ORDERED GAINP AND ALGAINP GROWN BY MOVPE, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 311-317
Authors:
BONA GL
UNGER P
BUCHAN NI
HEUBERGER W
JAKUBOWICZ A
ROENTGEN P
Citation: Gl. Bona et al., (AL)GAINP LASER WITH LATERAL CONFINEMENT BY EPITAXIAL-GROWTH ON NONPLANAR SUBSTRATES, IEEE photonics technology letters, 5(10), 1993, pp. 1125-1128
Authors:
ROTHUIZEN H
ROENTGEN P
BUCHAN N
Citation: H. Rothuizen et al., LATERAL DOWN-SCALING OF SELECTIVE AREA MOVPE-GROWN GAINAS INP WIRES AND DOTS/, Microelectronic engineering, 21(1-4), 1993, pp. 389-392
Authors:
CATANA A
BROOM RF
GERMANN R
ROENTGEN P
Citation: A. Catana et al., REGROWTH OF INP BY MOVPE ON DRY-ETCHED HETEROSTRUCTURES OF INP-GAINASP, Journal of crystal growth, 129(3-4), 1993, pp. 779-782
Authors:
UNGER P
BONA GL
GERMANN R
ROENTGEN P
WEBB DJ
Citation: P. Unger et al., LOW-THRESHOLD STRAINED GAINP QUANTUM-WELL RIDGE LASERS WITH ALGAAS CLADDING LAYERS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1880-1884
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