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Results: 5

Authors: RUSS C VERHAEGE K BOCK K ROUSSEL PJ GROESENEKEN G MAES HE
Citation: C. Russ et al., A COMPACT MODEL FOR THE GROUNDED-GATE NMOS TRANSISTOR BEHAVIOR UNDER CDM ESD STRESS, Journal of electrostatics, 42(4), 1998, pp. 351-381

Authors: DEGRAEVE R GROESENEKEN G BELLENS R OGIER JL DEPAS M ROUSSEL PJ MAES HE
Citation: R. Degraeve et al., NEW INSIGHTS IN THE RELATION BETWEEN ELECTRON TRAP GENERATION AND THESTATISTICAL PROPERTIES OF OXIDE BREAKDOWN, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 904-911

Authors: DEGRAEVE R OGIER JL BELLENS R ROUSSEL PJ GROESENEKEN G MAES HE
Citation: R. Degraeve et al., A NEW MODEL FOR THE FIELD-DEPENDENCE OF INTRINSIC AND EXTRINSIC TIME-DEPENDENT DIELECTRIC-BREAKDOWN, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 472-481

Authors: STEVENS R WITVROUW A ROUSSEL PJ MAEX K MEYNEN H CUTHBERTSON A
Citation: R. Stevens et al., INFLUENCE OF THE ANTI REFLECTIVE COATING ON THE ELECTROMIGRATION RESISTANCE OF 0.5 MU-M TECHNOLOGY METAL-2 LINE STRUCTURES, Applied surface science, 91(1-4), 1995, pp. 208-214

Authors: ROUSSEL PJ VANHELLEMONT J MAES HE
Citation: Pj. Roussel et al., NUMERICAL ASPECTS OF THE IMPLEMENTATION OF EFFECTIVE-MEDIUM APPROXIMATION MODELS IN SPECTROSCOPIC ELLIPSOMETRY REGRESSION SOFTWARE, Thin solid films, 234(1-2), 1993, pp. 423-427
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