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Results: 1-25/29
Authors:
CHARAI A
FARES L
ALFONSO C
ROUSSEL L
ROUVIERE JL
Citation: A. Charai et al., INTERFACIAL MODIFICATION INDUCED BY EQUILIBRIUM SEGREGATION IN GE(S) BICRYSTAL, Surface review and letters, 5(1), 1998, pp. 43-47
Authors:
FEUILLET G
DAUDIN B
WIDMANN F
ROUVIERE JL
ARLERY M
Citation: G. Feuillet et al., PLASTIC VERSUS ELASTIC MISFIT RELAXATION IN III-NITRIDES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 190, 1998, pp. 142-146
Authors:
HARTMANN JM
KANY F
CHAUTAIN F
ROUVIERE JL
WASIELA A
MARIETTE H
Citation: Jm. Hartmann et al., STRUCTURAL AND OPTICAL-PROPERTIES OF CDTE MNTE TILTED SUPERLATTICES GROWN ON VICINAL SURFACES/, Journal of crystal growth, 185, 1998, pp. 279-282
Authors:
HARTMANN JM
KANY F
CHARLEUX M
SAMSON Y
ROUVIERE JL
MARIETTE H
Citation: Jm. Hartmann et al., ATOMIC LAYER EPITAXY AND MOLECULAR-BEAM EPITAXY OF CDTE MNTE SUPERLATTICES - A STRUCTURAL AND OPTICAL STUDY/, Journal of applied physics, 84(8), 1998, pp. 4300-4308
Authors:
CHARLEUX M
ROUVIERE JL
HARTMANN JM
BOURRET A
Citation: M. Charleux et al., QUANTITATIVE INTERFACIAL PROFILES IN CDTE MN(MG)TE HETEROSTRUCTURES/, Journal of applied physics, 84(2), 1998, pp. 756-764
Authors:
BOURRET A
BARSKI A
ROUVIERE JL
RENAUD G
BARBIER A
Citation: A. Bourret et al., GROWTH OF ALUMINUM NITRIDE ON (111) SILICON - MICROSTRUCTURE AND INTERFACE STRUCTURE, Journal of applied physics, 83(4), 1998, pp. 2003-2009
Authors:
WIDMANN F
DAUDIN B
FEUILLET G
SAMSON Y
ROUVIERE JL
PELEKANOS N
Citation: F. Widmann et al., GROWTH-KINETICS AND OPTICAL-PROPERTIES OF SELF-ORGANIZED GAN QUANTUM DOTS, Journal of applied physics, 83(12), 1998, pp. 7618-7624
Authors:
ROUVIERE JL
WEYHER JL
SEELMANNEGGEBERT M
POROWSKI S
Citation: Jl. Rouviere et al., POLARITY DETERMINATION FOR GAN FILMS GROWN ON (0001)SAPPHIRE AND HIGH-PRESSURE-GROWN GAN SINGLE-CRYSTALS, Applied physics letters, 73(5), 1998, pp. 668-670
Authors:
MARSAL L
MARIETTE H
SAMSON Y
ROUVIERE JL
PICARD E
Citation: L. Marsal et al., NANOSCALE SURFACE CLUSTERING ON CDTE EPILAYERS, Applied physics letters, 73(20), 1998, pp. 2974-2976
Authors:
WIDMANN F
DAUDIN B
FEUILLET G
PELEKANOS N
ROUVIERE JL
Citation: F. Widmann et al., IMPROVED QUALITY GAN GROWN BY MOLECULAR-BEAM EPITAXY USING IN AS A SURFACTANT, Applied physics letters, 73(18), 1998, pp. 2642-2644
Authors:
DAUDIN B
WIDMANN F
FEUILLET G
ADELMANN C
SAMSON Y
ARLERY M
ROUVIERE JL
Citation: B. Daudin et al., 2D 3D GROWTH OF GAN BY MOLECULAR-BEAM EPITAXY - TOWARDS GAN QUANTUM DOTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 8-11
Authors:
ROUVIERE JL
ARLERY M
DAUDIN B
FEUILLET G
BRIOT O
Citation: Jl. Rouviere et al., TRANSMISSION ELECTRON-MICROSCOPY STRUCTURAL CHARACTERIZATION OF GAN LAYERS GROWN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 61-71
Authors:
RUFFENACHCLUR S
BRIOT O
ROUVIERE JL
GIL B
AULOMBARD RL
Citation: S. Ruffenachclur et al., MOVPE GROWTH AND CHARACTERIZATION OF ALXGA1-XN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 219-222
Authors:
FEUILLET G
WIDMANN F
DAUDIN B
SCHULER J
ARLERY M
ROUVIERE JL
PELEKANOS N
BRIOT O
Citation: G. Feuillet et al., COMPARATIVE-STUDY OF HEXAGONAL AND CUBIC GAN GROWTH BY RF-MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 233-237
Authors:
DAUDIN B
ROUVIERE JL
ARLERY M
Citation: B. Daudin et al., THE KEY ROLE OF POLARITY IN THE GROWTH-PROCESS OF (0001)-NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 157-160
Authors:
ROUVIERE JL
ARLERY M
NIEBUHR R
BACHEM KH
BRIOT O
Citation: Jl. Rouviere et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF GAN LAYERS GROWNBY MOCVD ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 161-166
Authors:
HARTMANN JM
CHARLEUX M
MARIETTE H
ROUVIERE JL
Citation: Jm. Hartmann et al., ATOMIC LAYER EPITAXY OF CDTE, MGTE AND MNTE GROWTH OF CDTE MNTE TILTED SUPERLATTICES ON VICINAL SURFACES/, Applied surface science, 112, 1997, pp. 142-147
Authors:
LEGUAY R
DUNLOP A
DUNSTETTER F
LORENZELLI N
BRASLAU A
BRIDOU F
CORNO J
PARDO B
CHEVALLIER J
COLLIEX C
MENELLE A
ROUVIERE JL
THOME L
Citation: R. Leguay et al., EVIDENCE FOR ATOMIC MIXING INDUCED IN METALLIC BILAYERS BY ELECTRONIC-ENERGY DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 481-502
Authors:
DAUDIN B
WIDMANN F
FEUILLET G
SAMSON Y
ARLERY M
ROUVIERE JL
Citation: B. Daudin et al., STRANSKI-KRASTANOV GROWTH MODE DURING THE MOLECULAR-BEAM EPITAXY OF HIGHLY STRAINED GAN, Physical review. B, Condensed matter, 56(12), 1997, pp. 7069-7072
Authors:
HARTMANN JM
CHARLEUX M
ROUVIERE JL
MARIETTE H
Citation: Jm. Hartmann et al., GROWTH OF CDTE MNTE TILTED AND SERPENTINE LATTICES ON VICINAL SURFACES/, Applied physics letters, 70(9), 1997, pp. 1113-1115
Authors:
BALLOT B
NGUY K
MENELLE A
MIMAULT J
GIRARDEAU T
ROUVIERE JL
SAMUEL F
ALUSTA K
Citation: B. Ballot et al., TITANIUM EVOLUTION UNDER NEUTRON-IRRADIATION IN NIXC1-X TI MULTILAYERS/, Journal de physique. IV, 6(C2), 1996, pp. 171-176
Authors:
AEBERSOLD JF
STADELMANN PA
ROUVIERE JL
Citation: Jf. Aebersold et al., QUANTITATIVE INTERPRETATION OF HRTEM IMAGES USING MULTIVARIATE-STATISTICS - THE CASE OF THE (GAMMA,GAMMA')-INTERFACE IN A NI BASE SUPERALLOY, Ultramicroscopy, 62(3), 1996, pp. 171-189
Authors:
BRUNLECUNFF D
DAUDIN B
ROUVIERE JL
Citation: D. Brunlecunff et al., OHMIC CONTACTS ON N-TYPE CDTE AND CDZNTE USING COHERENTLY GROWN NEODYMIUM, Applied physics letters, 69(4), 1996, pp. 514-516
Authors:
DAUDIN B
ROUVIERE JL
ARLERY M
Citation: B. Daudin et al., POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT-BEAM ELECTRON-DIFFRACTION, Applied physics letters, 69(17), 1996, pp. 2480-2482
Authors:
ROSSNER U
BARSKI A
ROUVIERE JL
BOURRET A
MASSIES J
DEPARIS C
GRANDJEAN N
Citation: U. Rossner et al., HOW TO INDUCE THE EPITAXIAL-GROWTH OF GALLIUM NITRIDE ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 74-77