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Results:
1-7
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Results: 7
Authors:
WU D
KAAS E
DIAZ J
LANE B
RYBALTOWSKI A
YI HJ
RAZEGHI M
Citation: D. Wu et al., INASSBP-INASSB-INAS DIODE-LASERS EMITTING AT 3.2-MU-M GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, IEEE photonics technology letters, 9(2), 1997, pp. 173-175
Authors:
SLIVKEN S
JELEN C
RYBALTOWSKI A
DIAZ J
RAZEGHI M
Citation: S. Slivken et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF AN 8.5 MU-M QUANTUM CASCADE LASER, Applied physics letters, 71(18), 1997, pp. 2593-2595
Authors:
RYBALTOWSKI A
XIAO Y
WU D
LANE B
YI H
FENG H
DIAZ J
RAZEGHI M
Citation: A. Rybaltowski et al., HIGH-POWER INASSB LNPASSB/INAS MIDINFRARED LASERS/, Applied physics letters, 71(17), 1997, pp. 2430-2432
Authors:
LANE B
WU D
RYBALTOWSKI A
YI H
DIAZ J
RAZEGHI M
Citation: B. Lane et al., COMPRESSIVELY STRAINED MULTIPLE-QUANTUM-WELL INASSB LASERS EMITTING AT 3.6 MU-M GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(4), 1997, pp. 443-445
Authors:
YI H
RYBALTOWSKI A
DIAZ J
WU D
LANE B
XIAO Y
RAZEGHI M
Citation: H. Yi et al., STABILITY OF FAR FIELDS IN DOUBLE-HETEROSTRUCTURE AND MULTIPLE-QUANTUM-WELL INASSB INPASSB/INAS MIDINFRARED LASERS/, Applied physics letters, 70(24), 1997, pp. 3236-3238
Authors:
LANE B
WU D
YI HJ
DIAZ J
RYBALTOWSKI A
KIM S
ERDTMANN M
JEON H
RAZEGHI M
Citation: B. Lane et al., STUDY ON THE EFFECTS OF MINORITY-CARRIER LEAKAGE IN INASSB INPASSB DOUBLE-HETEROSTRUCTURE/, Applied physics letters, 70(11), 1997, pp. 1447-1449
Authors:
DIAZ J
YI H
RYBALTOWSKI A
LANE B
LUKAS G
WU D
KIM S
ERDMANN M
KAAS E
RAZEGHI M
Citation: J. Diaz et al., INASSBP INASSB/INAS LASER-DIODES (LAMBDA=3.2 MU-M) GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 70(1), 1997, pp. 40-42
Risultati:
1-7
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