AAAAAA

   
Results: 1-18 |
Results: 18
CURRENT-VOLTAGE CHARACTERISTICS OF SI-B BLOCKED IMPURITY-BAND STRUCTURES UNDER CONDITIONS OF HOPPING-TRANSPORT-LIMITED PHOTORESPONSE
Authors: ARONZON BA KOVALEV DY KOZLOV AM LEOTIN J RYLKOV VV
Citation: Ba. Aronzon et al., CURRENT-VOLTAGE CHARACTERISTICS OF SI-B BLOCKED IMPURITY-BAND STRUCTURES UNDER CONDITIONS OF HOPPING-TRANSPORT-LIMITED PHOTORESPONSE, Semiconductors, 32(2), 1998, pp. 174-180
QUANTUM QUASI-1D TRANSPORT IN QUASI-2D HIGHLY DISORDERED STRUCTURES
Authors: ARONZON BA BAKAUSHIN DA MEILIKHOV EZ VEDENEEV AS RYLKOV VV SIZOV VE
Citation: Ba. Aronzon et al., QUANTUM QUASI-1D TRANSPORT IN QUASI-2D HIGHLY DISORDERED STRUCTURES, Physica status solidi. b, Basic research, 205(1), 1998, pp. 83-86
STUDIES OF MAGNETORESISTANCE AND HALL-EFFECT IN INSULATING FE SIO2 GRANULAR FILMS/
Authors: ARONZON BA LIKALTER AA RYLKOV VV SARYCHEV AK SEDOVA MA VARFOLOMEEV AE
Citation: Ba. Aronzon et al., STUDIES OF MAGNETORESISTANCE AND HALL-EFFECT IN INSULATING FE SIO2 GRANULAR FILMS/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 151-155
PHOTOFIELD INTERFACE IMPURITY SPECTROSCOPY IN BLOCKED IMPURITY BAND SI-B STRUCTURES
Authors: PASQUIER S MENY C ASADAUSKAS L LEOTIN J ARONZON BA RYLKOV VV CONEDERA V FABRE N REGOLINI JL MORIN C
Citation: S. Pasquier et al., PHOTOFIELD INTERFACE IMPURITY SPECTROSCOPY IN BLOCKED IMPURITY BAND SI-B STRUCTURES, Journal of applied physics, 83(8), 1998, pp. 4222-4229
FRENKEL-POOLE EFFECT FOR BORON IMPURITY IN SILICON IN STRONG WARMING ELECTRIC-FIELDS
Authors: KOZLOV AM RYLKOV VV
Citation: Am. Kozlov et Vv. Rylkov, FRENKEL-POOLE EFFECT FOR BORON IMPURITY IN SILICON IN STRONG WARMING ELECTRIC-FIELDS, Semiconductors, 31(7), 1997, pp. 658-660
MESOSCOPIC EFFECTS IN THE HOPPING CONDUCTIVITY REGION OF MACROSCOPIC QUASI-2-DIMENSIONAL SYSTEMS
Authors: ARONZON BA VEDENEEV AS RYLKOV VV
Citation: Ba. Aronzon et al., MESOSCOPIC EFFECTS IN THE HOPPING CONDUCTIVITY REGION OF MACROSCOPIC QUASI-2-DIMENSIONAL SYSTEMS, Semiconductors, 31(6), 1997, pp. 551-555
MANIFESTATION OF PERCOLATION CONDUCTIVITY OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS IN THE SPECTRUM OF SHALLOW INTERFACE STATES
Authors: ARONZON BA BAKAUSHIN DA VEDENEEV AS RYLKOV VV SIZOV VE
Citation: Ba. Aronzon et al., MANIFESTATION OF PERCOLATION CONDUCTIVITY OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS IN THE SPECTRUM OF SHALLOW INTERFACE STATES, Semiconductors, 31(12), 1997, pp. 1261-1267
INCOHERENT MESOSCOPIC PHENOMENA IN SEMICONDUCTOR STRUCTURE OF MACROSCOPIC SIZE
Authors: ARONZON BA RYLKOV VV VEDENEEV AS LEOTIN J
Citation: Ba. Aronzon et al., INCOHERENT MESOSCOPIC PHENOMENA IN SEMICONDUCTOR STRUCTURE OF MACROSCOPIC SIZE, Physica. A, 241(1-2), 1997, pp. 259-266
QUASI-ONE-DIMENSIONAL TRANSPORT OF NONDEGENERATE ELECTRONS IN 2-DIMENSIONAL SYSTEMS WITH A FLUCTUATION POTENTIAL
Authors: ARONZON BA MEILIKHOV EZ BAKAUSHIN DA VEDENEEV AS RYLKOV VV
Citation: Ba. Aronzon et al., QUASI-ONE-DIMENSIONAL TRANSPORT OF NONDEGENERATE ELECTRONS IN 2-DIMENSIONAL SYSTEMS WITH A FLUCTUATION POTENTIAL, JETP letters, 66(10), 1997, pp. 668-674
THERMAL-ACTIVATION SPECTROSCOPY OF SMALL QUANTITIES OF SHALLOW SECONDARY IMPURITIES IN SLIGHTLY COMPENSATED, DOPED SILICON
Authors: LEOTIN J RYLKOV VV
Citation: J. Leotin et Vv. Rylkov, THERMAL-ACTIVATION SPECTROSCOPY OF SMALL QUANTITIES OF SHALLOW SECONDARY IMPURITIES IN SLIGHTLY COMPENSATED, DOPED SILICON, Semiconductors, 30(8), 1996, pp. 802-805
OBSERVATION OF CORRELATION GAP IN QUASI-2D IMPURITY BAND OF SI-B MOS STRUCTURE
Authors: ARONZON BA RYLKOV VV VEDENEEV AS LEOTIN J
Citation: Ba. Aronzon et al., OBSERVATION OF CORRELATION GAP IN QUASI-2D IMPURITY BAND OF SI-B MOS STRUCTURE, Czechoslovak journal of Physics, 46, 1996, pp. 2529-2530
MESOSCOPIC EFFECTS IN MACROSCOPIC STRUCTURE WITH QUASI-2D HOPPING CONDUCTIVITY
Authors: ARONZON BA RYLKOV VV VEDENEEV AS
Citation: Ba. Aronzon et al., MESOSCOPIC EFFECTS IN MACROSCOPIC STRUCTURE WITH QUASI-2D HOPPING CONDUCTIVITY, Czechoslovak journal of Physics, 46, 1996, pp. 2365-2366
EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A
Citation: As. Vedeneev et al., EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL, JETP letters, 60(6), 1994, pp. 475-480
LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX
Authors: ZHDAN AG KOZLOV AM KLEMIN SN RYLKOV VV
Citation: Ag. Zhdan et al., LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX, Instruments and experimental techniques, 37(2), 1994, pp. 252-255
FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A
Citation: As. Vedeneev et al., FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION, Applied physics letters, 64(19), 1994, pp. 2566-2568
RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES
Authors: ZHDAN AG LIFSHITS TM RYLKOV VV SHAFRAN AG
Citation: Ag. Zhdan et al., RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES, Semiconductors, 27(5), 1993, pp. 465-467
ENERGY-DEPENDENCE OF THE CARRIER CAPTURE COEFFICIENT FOR NEUTRAL SHALLOW IMPURITIES IN SEMICONDUCTORS
Authors: DMITRIEV SG ZHDAN AG KOZLOV AM LIFSHITS TM RYLKOV VV SHAGIMURATOV OG
Citation: Sg. Dmitriev et al., ENERGY-DEPENDENCE OF THE CARRIER CAPTURE COEFFICIENT FOR NEUTRAL SHALLOW IMPURITIES IN SEMICONDUCTORS, Semiconductor science and technology, 8(4), 1993, pp. 544-548
CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG MODELLI A RYLKOV VV TKACH YY
Citation: As. Vedeneev et al., CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B, JETP letters, 57(10), 1993, pp. 662-666
Risultati: 1-18 |