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Results: 26-50/79
Authors:
SVORCIK V
RYBKA V
HNATOWICZ V
MICEK I
JANKOVSKIJ O
OCHSNER R
RYSSEL H
Citation: V. Svorcik et al., DEGRADATION OF POLYIMIDE BY IMPLANTATION WITH AR+ IONS, Journal of applied polymer science, 64(4), 1997, pp. 723-728
Authors:
JACOB M
PICHLER P
RYSSEL H
FALSTER R
Citation: M. Jacob et al., DETERMINATION OF VACANCY CONCENTRATIONS IN THE BULK OF SILICON-WAFERSBY PLATINUM DIFFUSION EXPERIMENTS, Journal of applied physics, 82(1), 1997, pp. 182-191
Authors:
MORIMOTO H
KISHIMOTO T
TAKAI M
YURA S
HOSONO A
OKUDA S
LIPP S
FREY L
RYSSEL H
Citation: H. Morimoto et al., ELECTRON-BEAM-INDUCED DEPOSITION OF PT FOR FIELD EMITTER ARRAYS, JPN J A P 1, 35(12B), 1996, pp. 6623-6625
Authors:
LIPP S
FREY L
LEHRER C
FRANK B
DEMM E
PAUTHNER S
RYSSEL H
Citation: S. Lipp et al., TETRAMETHOXYSILANE AS A PRECURSOR FOR FOCUSED ION-BEAM AND ELECTRON-BEAM ASSISTED INSULATOR (SIOX) DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3920-3923
Authors:
LIPP S
FREY L
LEHRER C
FRANK B
DEMM E
RYSSEL H
Citation: S. Lipp et al., INVESTIGATIONS ON THE TOPOLOGY OF STRUCTURES MILLED AND ETCHED BY FOCUSED ION-BEAMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3996-3999
Authors:
TAKAI M
KISHIMOTO T
YAMASHITA M
MORIMOTO H
YURA S
HOSONO A
OKUDA S
LIPP S
FREY L
RYSSEL H
Citation: M. Takai et al., MODIFICATION OF FIELD EMITTER ARRAY TIP SHAPE BY FOCUSED ION-BEAM IRRADIATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1973-1976
Authors:
JIAO GY
BOGEN S
FREY L
RYSSEL H
Citation: Gy. Jiao et al., A MULTI-LAMINATE WIRE MESH IONIZER FOR A CS SPUTTER NEGATIVE-ION SOURCE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 382(1-2), 1996, pp. 332-334
Authors:
BAUER AJ
BURTE EP
RYSSEL H
Citation: Aj. Bauer et al., CHARACTERIZATION OF ULTRATHIN ON STACKED LAYERS CONSISTING OF THERMALLY GROWN BOTTOM OXIDE AND DEPOSITED SILICON-NITRIDE, Microelectronic engineering, 34(1), 1996, pp. 51-62
Authors:
LIPP S
FREY L
LEHRER C
DEMM E
PAUTHNER S
RYSSEL H
Citation: S. Lipp et al., A COMPARISON OF FOCUSED ION-BEAM AND ELECTRON-BEAM-INDUCED DEPOSITIONPROCESSES, Microelectronics and reliability, 36(11-12), 1996, pp. 1779-1782
Authors:
PANEVA R
TEMMEL G
RYSSEL H
Citation: R. Paneva et al., ULTRASONIC TRANSDUCER WITH SILICON - A WELL-KNOWN MATERIAL WITH NEW APPLICATIONS, Sensors and actuators. A, Physical, 51(1), 1995, pp. 67-70
Authors:
BOHMAYR W
BURENKOV A
LORENZ J
RYSSEL H
SELBERHERR S
Citation: W. Bohmayr et al., TRAJECTORY SPLIT METHOD FOR MONTE-CARLO SIMULATION OF ION-IMPLANTATION, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 402-407
Authors:
BAUER H
PICHLER P
RYSSEL H
Citation: H. Bauer et al., MODELING DYNAMIC CLUSTERING OF ARSENIC INCLUDING NONNEGLIGIBLE CONCENTRATIONS OF ARSENIC-POINT DEFECT PAIRS, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 414-418
Authors:
KAL S
KASKO I
RYSSEL H
Citation: S. Kal et al., ION-BEAM MIXED ULTRA-THIN COBALT SILICIDE (COSI2) FILMS BY COBALT SPUTTERING AND RAPID THERMAL ANNEALING, Journal of electronic materials, 24(10), 1995, pp. 1349-1355
Authors:
KAL S
KASKO I
RYSSEL H
Citation: S. Kal et al., PREPARATION AND CHARACTERIZATION OF ULTRA-THIN COBALT SILICIDE FOR VLSI APPLICATIONS, Bulletin of Materials Science, 18(5), 1995, pp. 531-539
Authors:
GONG L
PETERSEN S
FREY L
RYSSEL H
Citation: L. Gong et al., IMPROVED DELINEATION TECHNIQUE FOR 2-DIMENSIONAL DOPANT PROFILING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 133-138
Authors:
LORENZ J
WIERZBICKI RJ
RYSSEL H
Citation: J. Lorenz et al., ANALYTICAL MODELING OF LATERAL IMPLANTATION PROFILES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 168-172
Authors:
CHEN NX
SCHORK R
RYSSEL H
Citation: Nx. Chen et al., HIGH-DOSE GE-TEMPERATURE( IMPLANTATION INTO SILICON AT ELEVATED SUBSTRATE), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 286-289
Authors:
BOGEN S
KORBER K
GONG L
FREY L
RYSSEL H
Citation: S. Bogen et al., COMPARISON OF RETROGRADE AND CONVENTIONAL P-WELLS IN REGARD OF LATCH-UP SUSCEPTIBILITY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 411-415
Authors:
SIMIONESCU A
HOBLER G
BOGEN S
FREY L
RYSSEL H
Citation: A. Simionescu et al., MODEL FOR THE ELECTRONIC STOPPING OF CHANNELED IONS IN SILICON AROUNDTHE STOPPING POWER MAXIMUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 47-50
Authors:
LIPP S
FREY L
FRANZ G
DEMM E
PETERSEN S
RYSSEL H
Citation: S. Lipp et al., LOCAL MATERIAL REMOVAL BY FOCUSED ION-BEAM MILLING AND ETCHING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 630-635
Authors:
PANEVA R
TEMMEL G
BURTE E
RYSSEL H
Citation: R. Paneva et al., NITROGEN-IMPLANTED ETCH-STOP LAYERS IN SILICON, Microelectronic engineering, 27(1-4), 1995, pp. 509-512
Authors:
LIST S
PICHLER P
RYSSEL H
Citation: S. List et al., ATOMISTIC EVALUATION OF DIFFUSION THEORIES FOR THE DIFFUSION OF DOPANTS IN VACANCY GRADIENTS, Microelectronics, 26(2-3), 1995, pp. 261-264
Authors:
PICHLER P
RYSSEL H
PLOSS R
BONAFOS C
CLAVERIE A
Citation: P. Pichler et al., PHOSPHORUS-ENHANCED DIFFUSION OF ANTIMONY DUE TO GENERATION OF SELF-INTERSTITIALS, Journal of applied physics, 78(3), 1995, pp. 1623-1629
Authors:
SCHORK R
KRUGEL S
SCHNEIDER C
PFITZNER L
RYSSEL H
Citation: R. Schork et al., APPLICATIONS OF SINGLE-BEAM PHOTOTHERMAL ANALYSIS, Journal de physique. IV, 4(C7), 1994, pp. 27-30
Authors:
DEKEERSMAECKER R
DECLERCK G
FELIX P
HAOND M
HILL C
JANSSEN G
LORENZ J
MAES H
MONTREE A
NEPPL F
PATRUNO P
RUDAN M
RYSSEL H
VANDENHOVE L
VANDERVORST W
VANOMMEN A
Citation: R. Dekeersmaecker et al., THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2852-2859