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Results: 1-25/41
Authors:
Pedeutour, JN
Radhakrishnan, K
Cramail, H
Deffieux, A
Citation: Jn. Pedeutour et al., Reactivity of metallocene catalysts for olefin polymerization: Influence of activator nature and structure, MACRO RAPID, 22(14), 2001, pp. 1095-1123
Authors:
Yungster, S
Radhakrishnan, K
Citation: S. Yungster et K. Radhakrishnan, Simulation of unsteady hypersonic combustion around projectiles in an expansion tube, SHOCK WAVES, 11(3), 2001, pp. 167-177
Authors:
Tan, CL
Hui, P
Yan, BP
Wang, H
Zheng, HQ
Yang, H
Radhakrishnan, K
Citation: Cl. Tan et al., Quick derivation of high-power thermal resistance values of HBTs using an existing measurement technique and a theoretical formula, MICROW OPT, 30(4), 2001, pp. 287-289
Authors:
Yuan, K
Radhakrishnan, K
Zheng, HQ
Zhuang, QD
Ing, GI
Citation: K. Yuan et al., Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction, THIN SOL FI, 391(1), 2001, pp. 36-41
Authors:
Radhakrishnan, K
Chew, WC
Citation: K. Radhakrishnan et Wc. Chew, An efficient Krylov-subspace-based algorithm to solve the dielectric-waveguide problem, IEEE MICR T, 49(7), 2001, pp. 1345-1348
Authors:
Radhakrishnan, K
Chew, WC
Citation: K. Radhakrishnan et Wc. Chew, Efficient analysis of waveguiding structures, ART H ANT L, 2001, pp. 461-485
Authors:
Chen, YW
Ooi, BS
Ng, GI
Radhakrishnan, K
Tan, CL
Citation: Yw. Chen et al., Dry via hole etching of GaAs using high-density Cl-2/Ar plasma, J VAC SCI B, 18(5), 2000, pp. 2509-2512
Authors:
Sathya, B
Radhakrishnan, K
Zheng, HQ
Yuan, K
Ng, GI
Yoon, SF
Citation: B. Sathya et al., Electrical and optical characterization of regrown PHEMT layer structures on etched GaAs surfaces, J MAT S-M E, 11(5), 2000, pp. 379-382
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 110-114
Authors:
Gopinath, B
Radhakrishnan, K
Sarma, PS
Jayachandran, D
Alexander, A
Citation: B. Gopinath et al., A questionnaire survey about doctor-patient communication, compliance and locus of control among South Indian people with epilepsy, EPILEPSY R, 39(1), 2000, pp. 73-82
Authors:
Wang, H
Ng, GI
Zheng, HQ
Xiong, YZ
Chua, LH
Yuan, KH
Radhakrishnan, K
Yoon, SF
Citation: H. Wang et al., Demonstration of aluminum-free metamorphic InP/Tn(0.53)Ga(0.47)As/InP double heterojunction bipolar transistors on GaAs substrates, IEEE ELEC D, 21(9), 2000, pp. 427-429
Authors:
Radhakrishnan, K
Tan, CL
Zheng, HQ
Ng, GI
Citation: K. Radhakrishnan et al., Preparation and characterization of rf-sputtered SrTiO3 thin films, J VAC SCI A, 18(4), 2000, pp. 1638-1641
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., Study of doping concentration variation in InGaAs/InP high electron mobility transistor layer structures by Raman scattering, J VAC SCI A, 18(2), 2000, pp. 713-716
Authors:
Elizabeth, J
Bhaskara, RM
Radhakrishnan, VV
Radhakrishnan, K
Thomas, SV
Citation: J. Elizabeth et al., Melanotic differentiation in dysembryoplastic neuroepithelial tumor, CLIN NEUR, 19(1), 2000, pp. 38-40
Authors:
Radhakrishnan, K
Patrick, THK
Zhang, PH
Zheng, HQ
Yoon, SF
Raman, A
Citation: K. Radhakrishnan et al., Effect of growth interruption on the electrical and optical characteristics of InP/InGaAs HEMT structures, MICROEL ENG, 51-2, 2000, pp. 433-440
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures, MICROEL ENG, 51-2, 2000, pp. 441-448
Authors:
Parsons-Wingerter, P
Elliott, KE
Farr, AG
Radhakrishnan, K
Clark, JI
Sage, EH
Citation: P. Parsons-wingerter et al., Generational analysis reveals that TGF-beta 1 inhibits the rate of angiogenesis in vivo by selective decrease in the number of new vessels, MICROVASC R, 59(2), 2000, pp. 221-232
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Growth optimization of InGaP layers by solid source molecular beam epitaxyfor the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures, J CRYST GR, 216(1-4), 2000, pp. 51-56
Authors:
Radhakrishnan, K
Pandian, JD
Santhoshkumar, T
Thomas, SV
Deetha, TD
Sarma, PS
Jayachandran, D
Mohamed, E
Citation: K. Radhakrishnan et al., Prevalence, knowledge, attitude, and practice of epilepsy in Kerala, SouthIndia, EPILEPSIA, 41(8), 2000, pp. 1027-1035
Authors:
Rao, MB
Radhakrishnan, K
Citation: Mb. Rao et K. Radhakrishnan, Is epilepsy surgery possible in countries with limited resources?, EPILEPSIA, 41, 2000, pp. S31-S34
Authors:
Zheng, HQ
Radhakrishnan, K
Wang, H
Yuan, KH
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy, APPL PHYS L, 77(6), 2000, pp. 869-871
Authors:
Radhakrishnan, K
Santoshkumar, B
Venugopal, A
Citation: K. Radhakrishnan et al., Prevalence of benign epileptiform variants observed in an EEG laboratory from South India, CLIN NEU, 110(2), 1999, pp. 280-285
Authors:
Radhakrishnan, K
Asokan, K
Dasan, J
Bhat, CC
Ramamohan, TR
Citation: K. Radhakrishnan et al., Numerical evidence for the existence of a low-dimensional attractor and its implications in the rheology of dilute suspensions of periodically forcedslender bodies, PHYS REV E, 60(6), 1999, pp. 6602-6609
Authors:
Radhakrishnan, K
Sivaram, S
Citation: K. Radhakrishnan et S. Sivaram, Copolymerization of ethylene with 2,5-norbornadiene using a homogeneous metallocene/MAO catalyst system, MACRO CH P, 200(4), 1999, pp. 858-862
Authors:
Radhakrishnan, K
Ing, NG
Gopalakrishnan, R
Citation: K. Radhakrishnan et al., Reactive sputter deposition and characterization of tantalum nitride thin films, MAT SCI E B, 57(3), 1999, pp. 224-227