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Authors: Zhmakin, IA Kulik, AV Karpov, SY Demina, SE Ramm, MS Makarov, YN

Citation: Ia. Zhmakin et al., Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide, DIAM RELAT, 9(3-6), 2000, pp. 446-451

Authors: Karpov, SY Kulik, AV Zhmakin, IA Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA

Citation: Sy. Karpov et al., Analysis of sublimation growth of bulk SiC crystals in tantalum container, J CRYST GR, 211(1-4), 2000, pp. 347-351

Authors: Segal, AS Vorob'ev, AN Karpov, SY Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Makarov, YN

Citation: As. Segal et al., Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas, J CRYST GR, 208(1-4), 2000, pp. 431-441

Authors: Segal, AS Vorob'ev, AN Karpov, SY Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Zhmakin, AI

Citation: As. Segal et al., Transport phenomena in sublimation growth of SiC bulk crystals, MAT SCI E B, 61-2, 1999, pp. 40-43

Authors: Ramm, MS Mokhov, EN Demina, SE Ramm, MG Roenkov, AD Vodakov, YA Segal, AS Vorob'ev, AN Karpov, SY Kulik, AV Makarov, YN

Citation: Ms. Ramm et al., Optimization of sublimation growth of SiC bulk crystals using modeling, MAT SCI E B, 61-2, 1999, pp. 107-112