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Results: 26-50/59
Authors:
Manova, D
Huber, P
Mandl, S
Rauschenbach, B
Citation: D. Manova et al., Surface modification of aluminium by plasma immersion ion implantation, SURF COAT, 128, 2000, pp. 249-255
Authors:
Gerlach, JW
Schwertberger, R
Schrupp, D
Rauschenbach, B
Neumann, H
Zeuner, M
Citation: Jw. Gerlach et al., Texture and epitaxy by ion beam assisted deposition of gallium nitride, SURF COAT, 128, 2000, pp. 286-291
Authors:
Uglov, VV
Cherenda, NN
Danilyuk, AL
Rauschenbach, B
Citation: Vv. Uglov et al., Structural and phase composition changes in aluminium induced by carbon implantation, SURF COAT, 128, 2000, pp. 358-363
Authors:
Hammerl, C
Kaupp, C
Rauschenbach, B
Citation: C. Hammerl et al., Study of phase formation of high fluence oxygen ion-implanted titanium andmolybdenum by means of in-situ electrical resistance measurements, SURF COAT, 128, 2000, pp. 370-374
Authors:
Mandl, S
Gunzel, R
Richter, E
Moller, W
Rauschenbach, B
Citation: S. Mandl et al., Annealing behaviour of nitrogen implanted stainless steel, SURF COAT, 128, 2000, pp. 423-428
Authors:
Liu, C
Wenzel, A
Gerlach, JW
Fan, XF
Rauschenbach, B
Citation: C. Liu et al., Annealing study of ion implanted GaN, SURF COAT, 128, 2000, pp. 455-460
Authors:
Mandl, S
Thorwarth, G
Schreck, M
Stritzker, B
Rauschenbach, B
Citation: S. Mandl et al., Raman study of titanium oxide layers produced with plasma immersion ion implantation, SURF COAT, 125(1-3), 2000, pp. 84-88
Authors:
Thorwarth, G
Mandl, S
Rauschenbach, B
Citation: G. Thorwarth et al., Plasma immersion ion implantation of cold-work steel, SURF COAT, 125(1-3), 2000, pp. 94-99
Authors:
Rauschenbach, B
Gerlach, JW
Citation: B. Rauschenbach et Jw. Gerlach, Texture development in titanium nitride films grown by low-energy ion assisted deposition, CRYST RES T, 35(6-7), 2000, pp. 675-688
Authors:
Volz, K
Rauschenbach, B
Klatt, C
Ensinger, W
Citation: K. Volz et al., Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system, NUCL INST B, 166, 2000, pp. 75-81
Authors:
Huber, P
Keller, G
Gerlach, JW
Mandl, S
Assmann, W
Rauschenbach, B
Citation: P. Huber et al., Trench homogeneity in plasma immersion ion implantation, NUCL INST B, 161, 2000, pp. 1085-1089
Authors:
Renner, B
Hammerl, C
Rauschenbach, B
Citation: B. Renner et al., Formation of buried oxide layers in molybdenum by high-fluence oxygen ion implantation, NUCL INST B, 160(3), 2000, pp. 363-371
Authors:
Six, S
Gerlach, JW
Rauschenbach, B
Citation: S. Six et al., Epitaxial aluminum nitride films on sapphire formed by pulsed laser deposition, THIN SOL FI, 370(1-2), 2000, pp. 1-4
Authors:
Lima, AP
Miskys, CR
Karrer, U
Ambacher, O
Wenzel, A
Rauschenbach, B
Stutzmann, M
Citation: Ap. Lima et al., Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy, J CRYST GR, 220(4), 2000, pp. 341-344
Authors:
Keckes, J
Gerlach, JW
Rauschenbach, B
Citation: J. Keckes et al., Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition, J CRYST GR, 219(1-2), 2000, pp. 1-9
Authors:
Mandl, S
Rauschenbach, B
Citation: S. Mandl et B. Rauschenbach, Anisotropic strain in nitrided austenitic stainless steel, J APPL PHYS, 88(6), 2000, pp. 3323-3329
Authors:
Keller, G
Rude, U
Stals, L
Mandl, S
Rauschenbach, B
Citation: G. Keller et al., Simulation of trench homogeneity in plasma immersion ion implantation, J APPL PHYS, 88(2), 2000, pp. 1111-1117
Authors:
Mandl, S
Rauschenbach, B
Citation: S. Mandl et B. Rauschenbach, Plasma immersion ion implantation. New technology for homogeneous modification of the surface of medical implants of complex shapes, BIOMED TECH, 45(7-8), 2000, pp. 193-198
Authors:
Wenzel, A
Liu, C
Rauschenbach, B
Citation: A. Wenzel et al., Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN, MAT SCI E B, 59(1-3), 1999, pp. 191-194
Authors:
Zeitler, M
Sienz, S
Rauschenbach, B
Citation: M. Zeitler et al., Study of stress evolution of boron nitride films prepared by ion assisted deposition, J VAC SCI A, 17(2), 1999, pp. 597-602
Authors:
Krtschil, A
Witte, H
Lisker, M
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Wenzel, A
Rauschenbach, B
Citation: A. Krtschil et al., Incorporation of deep defects in GaN induced by doping and implantation processes, PHYS ST S-B, 216(1), 1999, pp. 587-591
Authors:
Volz, K
Schreiber, S
Zeitler, M
Rauschenbach, B
Stritzker, B
Ensinger, W
Citation: K. Volz et al., Structural investigations of silicon carbide films formed by fullerene carbonization of silicon, SURF COAT, 122(2-3), 1999, pp. 101-107
Authors:
Lavrentiev, V
Hammerl, C
Renner, B
Zeitler, M
Rauschenbach, B
Gaponenko, N
Lonin, Y
Pisanenko, A
Citation: V. Lavrentiev et al., Modification of titanium by high power electron beams, SURF COAT, 114(2-3), 1999, pp. 143-147
Authors:
Grosshans, I
Volz, K
Ensinger, W
Rauschenbach, B
Citation: I. Grosshans et al., Synthesis of buried silicon oxide layers by water plasma immersion implantation, NUCL INST B, 155(1-2), 1999, pp. 67-74
Authors:
Keller, G
Paulus, M
Mandl, S
Stritzker, B
Rauschenbach, B
Citation: G. Keller et al., Modelling on plasma immersion implantation of trenches, NUCL INST B, 148(1-4), 1999, pp. 64-68