Authors: Reshanov, SA Parfenova, II Rastegaev, VP

Citation: Sa. Reshanov et al., Group III-V impurities in beta-SiC: lattice distortions and solubility, DIAM RELAT, 10(3-7), 2001, pp. 1278-1282

Authors: Reshanov, SA Rastegaev, VP

Citation: Sa. Reshanov et Vp. Rastegaev, Photoconductivity of semi-insulating SiC : < V,Al >, DIAM RELAT, 10(11), 2001, pp. 2035-2038

Authors: Reshanov, SA

Citation: Sa. Reshanov, Growth and high temperature performance of semi-insulating silicon carbide, DIAM RELAT, 9(3-6), 2000, pp. 480-482

Authors: Rastegaev, VP Avrov, DD Reshanov, SA Lebedev, AO

Citation: Vp. Rastegaev et al., Features of SiC single-crystals grown in vacuum using the LETI method, MAT SCI E B, 61-2, 1999, pp. 77-81