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Results: 1-19 |
Results: 19
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
Authors: Visconti, P Reshchikov, MA Jones, KM Wang, DF Cingolani, R Morkoc, H Molnar, RJ Smith, DJ
Citation: P. Visconti et al., Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication, J VAC SCI B, 19(4), 2001, pp. 1328-1333
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films - art. no. 115205
Authors: Reshchikov, MA Korotkov, RY
Citation: Ma. Reshchikov et Ry. Korotkov, Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films - art. no. 115205, PHYS REV B, 6411(11), 2001, pp. 5205
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
Authors: Huang, D Yun, F Reshchikov, MA Wang, D Morkoc, H Rode, DL Farina, LA Kurdak, C Tsen, KT Park, SS Lee, KY
Citation: D. Huang et al., Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy, SOL ST ELEC, 45(5), 2001, pp. 711-715
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template
Authors: Reshchikov, MA Huang, D Yun, F He, L Morkoc, H Reynolds, DC Park, SS Lee, KY
Citation: Ma. Reshchikov et al., Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template, APPL PHYS L, 79(23), 2001, pp. 3779-3781
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Authors: Huang, D Visconti, P Jones, KM Reshchikov, MA Yun, F Baski, AA King, T Morkoc, H
Citation: D. Huang et al., Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4145-4147
Yellow and green luminescence in a freestanding GaN template
Authors: Reshchikov, MA Morkoc, H Park, SS Lee, KY
Citation: Ma. Reshchikov et al., Yellow and green luminescence in a freestanding GaN template, APPL PHYS L, 78(20), 2001, pp. 3041-3043
Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy
Authors: Reshchikov, MA Visconti, P Morkoc, H
Citation: Ma. Reshchikov et al., Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy, APPL PHYS L, 78(2), 2001, pp. 177-179
Transient photoluminescence of defect transitions in freestanding GaN
Authors: Reshchikov, MA Morkoc, H Park, SS Lee, KY
Citation: Ma. Reshchikov et al., Transient photoluminescence of defect transitions in freestanding GaN, APPL PHYS L, 78(19), 2001, pp. 2882-2884
Characterization of free-standing hydride vapor phase epitaxy GaN
Authors: Jasinski, J Swider, W Liliental-Weber, Z Visconti, P Jones, KM Reshchikov, MA Yun, F Morkoc, H Park, SS Lee, KY
Citation: J. Jasinski et al., Characterization of free-standing hydride vapor phase epitaxy GaN, APPL PHYS L, 78(16), 2001, pp. 2297-2299
Comparison of the polarizations of the 1.2-eV photoluminescence band in n-GaAs : Te under uniaxial pressure and resonance polarized excitation
Authors: Gutkin, AA Reshchikov, MA Sedov, VE
Citation: Aa. Gutkin et al., Comparison of the polarizations of the 1.2-eV photoluminescence band in n-GaAs : Te under uniaxial pressure and resonance polarized excitation, SEMICONDUCT, 34(10), 2000, pp. 1151-1156
Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy
Authors: Yun, F Reshchikov, MA Jones, K Visconti, P Morkoc, H Park, SS Lee, KY
Citation: F. Yun et al., Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy, SOL ST ELEC, 44(12), 2000, pp. 2225-2232
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Wessels, BW Ulmer, MP
Citation: Ma. Reshchikov et al., Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers, J APPL PHYS, 87(7), 2000, pp. 3351-3354
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
Authors: Visconti, P Jones, KM Reshchikov, MA Yun, F Cingolani, R Morkoc, H Park, SS Lee, KY
Citation: P. Visconti et al., Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration, APPL PHYS L, 77(23), 2000, pp. 3743-3745
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
Authors: Visconti, P Jones, KM Reshchikov, MA Cingolani, R Morkoc, H Molnar, RJ
Citation: P. Visconti et al., Dislocation density in GaN determined by photoelectrochemical and hot-wet etching, APPL PHYS L, 77(22), 2000, pp. 3532-3534
Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain
Authors: Averkiev, NS Gutkin, AA Reshchikov, MA
Citation: Ns. Averkiev et al., Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain, SEMICONDUCT, 33(11), 1999, pp. 1196-1201
Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-Sn-Ga(Si-Ga) complexes in GaAs produced as a result of resonant polarized excitation
Authors: Gutkin, AA Reshchikov, MA Sedov, VE
Citation: Aa. Gutkin et al., Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-Sn-Ga(Si-Ga) complexes in GaAs produced as a result of resonant polarized excitation, SEMICONDUCT, 33(1), 1999, pp. 37-40
Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy
Authors: Korotkov, RY Reshchikov, MA Wessels, BW
Citation: Ry. Korotkov et al., Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy, PHYSICA B, 274, 1999, pp. 80-83
Deep acceptors in undoped GaN
Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Ulmer, MP Wessels, BW
Citation: Ma. Reshchikov et al., Deep acceptors in undoped GaN, PHYSICA B, 274, 1999, pp. 105-108
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
Authors: Reshchikov, MA Yi, GC Wessels, BW
Citation: Ma. Reshchikov et al., Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities, PHYS REV B, 59(20), 1999, pp. 13176-13183
Risultati: 1-19 |