AAAAAA
Results: 1-25/34
Authors:
Pham, MT
Matz, W
Reuther, H
Richter, E
Steiner, G
Oswald, S
Citation: Mt. Pham et al., Interface-mediated synthesis of hydroxyapatite, J BIOMED MR, 59(2), 2002, pp. 254-258
Authors:
Reuther, H
Behr, G
Teresiak, A
Citation: H. Reuther et al., Determination of the hyperfine parameters of alpha-FeSi2 by angle dependent Mossbauer spectroscopy on single crystals, J PHYS-COND, 13(11), 2001, pp. L225-L229
Authors:
Pham, MT
Maitz, MF
Grambole, D
Herrmann, F
Reuther, H
Richter, E
Citation: Mt. Pham et al., Surface stimuli to precipitating hydroxyapatite on titanium, J MAT SCI L, 20(4), 2001, pp. 295-296
Authors:
Uglov, VV
Anishchik, VM
Kuleshov, AK
Fedotova, JA
Kvasov, NT
Danilyuk, AL
Guenzel, R
Reuther, H
Richter, E
Citation: Vv. Uglov et al., Plasma immersion N and N+C implantation into high-speed tool steel: surface morphology, phase composition and mechanical properties, SURF COAT, 142, 2001, pp. 406-411
Authors:
Ueda, M
Beloto, AF
Reuther, H
Parascandola, S
Citation: M. Ueda et al., Plasma immersion ion implantation of nitrogen in Si: formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects, SURF COAT, 136(1-3), 2001, pp. 244-248
Authors:
Beloto, AF
Ueda, M
Abramof, E
Senna, JR
Leite, NF
da Silva, MD
Reuther, H
Citation: Af. Beloto et al., Porous silicon implanted with nitrogen by plasma immersion ion implantation, NUCL INST B, 175, 2001, pp. 224-228
Authors:
Abramof, E
Beloto, AF
Ueda, M
Gunzel, R
Reuther, H
Citation: E. Abramof et al., Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation, NUCL INST B, 175, 2001, pp. 229-234
Authors:
Ueda, M
Reuther, H
Gunzel, R
Beloto, AF
Abramof, E
Berni, LA
Citation: M. Ueda et al., High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation, NUCL INST B, 175, 2001, pp. 715-720
Authors:
Dubiel, SM
Cieslak, J
Zukrowski, J
Reuther, H
Citation: Sm. Dubiel et al., Spin-density enhancement in a Sn-119 implanted (110)Cr single crystal as evidenced by Mossbauer spectroscopy - art. no. 060406, PHYS REV B, 6305(6), 2001, pp. 0406
Authors:
Pham, MT
Reuther, H
Matz, W
Mueller, R
Steiner, G
Oswald, S
Zyganov, I
Citation: Mt. Pham et al., Surface induced reactivity for titanium by ion implantation, J MAT S-M M, 11(6), 2000, pp. 383-391
Authors:
Walterfang, M
Kruijer, S
Dobler, M
Reuther, H
Keune, W
Citation: M. Walterfang et al., Phase analysis in alpha-Fe after high-dose Si ion implantation by depth-selective conversion-electron Mossbauer spectroscopy (DCEMS), HYPER INTER, 126(1-4), 2000, pp. 219-222
Authors:
Pham, MT
Matz, W
Reuther, H
Richter, E
Steiner, G
Oswald, S
Citation: Mt. Pham et al., Surface sensitivity of ion implanted titanium to hydroxyapatite formation, J MAT SCI L, 19(5), 2000, pp. 443-445
Authors:
Pham, MT
Matz, W
Reuther, H
Richter, E
Steiner, G
Citation: Mt. Pham et al., Hydroxyapatite nucleation on Na ion implanted Ti surfaces, J MAT SCI L, 19(12), 2000, pp. 1029-1031
Authors:
Pham, MT
Matz, W
Reuther, H
Richter, E
Steiner, G
Oswald, S
Citation: Mt. Pham et al., Ion beam sensitizing of titanium surfaces to hydroxyapatite formation, SURF COAT, 128, 2000, pp. 313-319
Authors:
Hornauer, U
Richter, E
Matz, W
Reuther, H
Mucklich, A
Wieser, E
Moller, W
Schumacher, G
Schutze, M
Citation: U. Hornauer et al., Microstructure and oxidation kinetics of intermetallic TiAl after Si- and Mo- ion implantation, SURF COAT, 128, 2000, pp. 418-422
Protection of gamma-based TiAl against high temperature oxidation using ion implantation of chlorine
Authors:
Hornauer, U
Gunzel, R
Reuther, H
Richter, E
Wieser, E
Moller, W
Schumacher, G
Dettenwanger, F
Schutze, M
Citation: U. Hornauer et al., Protection of gamma-based TiAl against high temperature oxidation using ion implantation of chlorine, SURF COAT, 125(1-3), 2000, pp. 89-93
Authors:
Abramof, E
Beloto, AF
Ueda, M
Gomes, GF
Berni, LA
Reuther, H
Citation: E. Abramof et al., Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation, NUCL INST B, 161, 2000, pp. 1054-1057
Authors:
Ueda, M
Gomes, GF
Berni, LA
Rossi, JO
Barroso, JJ
Beloto, AF
Abramof, E
Reuther, H
Citation: M. Ueda et al., Plasma immersion ion implantation using a glow discharge source with controlled plasma potential, NUCL INST B, 161, 2000, pp. 1064-1068
Authors:
Tsyganov, I
Wieser, E
Matz, W
Mucklich, A
Reuther, H
Citation: I. Tsyganov et al., Formation of the phases Ti3Al and TiAl by high-dose implantation of aluminium into titanium, NUCL INST B, 161, 2000, pp. 1069-1074
Authors:
Reiche, R
Oswald, S
Wetzig, K
Dobler, M
Reuther, H
Walterfang, M
Citation: R. Reiche et al., The transformation of beta-FeSi2 under Ar ion bombardment studied by XPS, AES and Mossbauer spectroscopy, NUCL INST B, 160(3), 2000, pp. 397-407
Authors:
Pham, MT
Maitz, MF
Matz, W
Reuther, H
Richter, E
Steiner, G
Citation: Mt. Pham et al., Promoted hydroxyapatite nucleation on titanium ion-implanted with sodium, THIN SOL FI, 379(1-2), 2000, pp. 50-56
Authors:
Tsyganov, I
Wieser, E
Matz, W
Mucklich, A
Reuther, H
Pham, MT
Richter, E
Citation: I. Tsyganov et al., Phase formation in aluminium implanted titanium and the correlated modification of mechanical and corrosive properties, THIN SOL FI, 376(1-2), 2000, pp. 188-197
Authors:
Berni, LA
Ueda, M
Gomes, GF
Beloto, AF
Reuther, H
Citation: La. Berni et al., Experimental results of a dc glow discharge source with controlled plasma floating potential for plasma immersion ion implantation, J PHYS D, 33(13), 2000, pp. 1592-1595
Authors:
Heera, V
Reuther, H
Stoemenos, J
Pecz, B
Citation: V. Heera et al., Phase formation due to high dose aluminum implantation into silicon carbide, J APPL PHYS, 87(1), 2000, pp. 78-85
Authors:
Walterfang, M
Kruijer, S
Keune, W
Dobler, M
Reuther, H
Citation: M. Walterfang et al., Depth analysis of buried iron disilicide formation by Fe ion implantation into Si, APPL PHYS L, 76(11), 2000, pp. 1413-1415