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Results: 1-10 |
Results: 10
Photoluminescence of nanostructured system of a-Si with c-Si nanoinclusions produced by method of monocrystalline silicon irradiation with heavy ions
Authors: Tetelbaum, DI Trushin, SA Revin, DG Gaponova, DM Golovanov, AI
Citation: Di. Tetelbaum et al., Photoluminescence of nanostructured system of a-Si with c-Si nanoinclusions produced by method of monocrystalline silicon irradiation with heavy ions, IAN FIZ, 65(2), 2001, pp. 292-294
The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions
Authors: Tetelbaum, DI Trushin, SA Burdov, VA Golovanov, AI Revin, DG Gaponova, DM
Citation: Di. Tetelbaum et al., The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions, NUCL INST B, 174(1-2), 2001, pp. 123-129
Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field
Authors: Aleshkin, VY Gaponova, DM Gavrilenko, VI Krasil'nik, ZF Revin, DG Zvonkov, BN Uskova, EA
Citation: Vy. Aleshkin et al., Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field, SEMICONDUCT, 34(9), 2000, pp. 1073-1078
The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping
Authors: Tetelbaum, DI Gorshkov, ON Trushun, SA Revin, DG Gaponova, DM Eckstein, W
Citation: Di. Tetelbaum et al., The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping, NANOTECHNOL, 11(4), 2000, pp. 295-297
Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells
Authors: Aleshkin, VY Andronov, AA Antonov, AV Gaponova, DM Gavrilenko, VI Revin, DG Zvonkov, BN Uskova, EA
Citation: Vy. Aleshkin et al., Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells, IAN FIZ, 64(2), 2000, pp. 302-307
Compositional and optical properties GaNxAs1-x layers grown by MOCVD
Authors: Gaponova, DM Danil'tsev, VM Drozdov, MN Drozdov, YN Krasil'nikov, ZF Revin, DG Tolstoguzov, AB Khrykin, OI Shashkin, VI
Citation: Dm. Gaponova et al., Compositional and optical properties GaNxAs1-x layers grown by MOCVD, IAN FIZ, 64(2), 2000, pp. 358-361
Influence of formation regimes and doping on luminescence properties of nanostructured system SiO2 : Si at ion implantation
Authors: Tetelbaum, DI Gorshkov, ON Trushin, CA Revin, DG Gaponova, DM Eckstein, W
Citation: Di. Tetelbaum et al., Influence of formation regimes and doping on luminescence properties of nanostructured system SiO2 : Si at ion implantation, IAN FIZ, 64(2), 2000, pp. 362-365
Surface photoabsorption monitoring of the InGaAs grown by MOCVD
Authors: Vostokov, NV Danil'tsev, VM Drosdov, MN Drozdov, YN Luk'yanov, AY Revin, DG Khrykin, OI Shashkin, VI
Citation: Nv. Vostokov et al., Surface photoabsorption monitoring of the InGaAs grown by MOCVD, IAN FIZ, 64(2), 2000, pp. 370-373
Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure
Authors: Aleshkin, VY Andronov, AA Antonov, AV Gavrilenko, VI Gaponova, DM Krasil'nik, ZF Revin, DG Zvonkov, N Uskova, EA
Citation: Vy. Aleshkin et al., Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure, SEMIC SCI T, 15(11), 2000, pp. 1049-1053
Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing
Authors: Aleshkin, VY Andronov, AA Antonov, AV Demidov, EV Gavrilenko, VI Revin, DG Zvonkov, BN Zvonkov, NB Uskova, EA
Citation: Vy. Aleshkin et al., Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing, PHYSICA B, 272(1-4), 1999, pp. 139-142
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