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Results: 1-7 |
Results: 7
Characterisation of 2D photonic crystals cavities on InP membranes
Authors: Grillet, C Pottier, P Letartre, X Seassal, C Rojo-Romeo, P Viktorovitch, P d'Yerville, ML Cassagne, D
Citation: C. Grillet et al., Characterisation of 2D photonic crystals cavities on InP membranes, EPJ-APPL PH, 16(1), 2001, pp. 37-44
InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m
Authors: Seassal, C Rojo-Romeo, P Letartre, X Viktorovitch, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation: C. Seassal et al., InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m, ELECTR LETT, 37(4), 2001, pp. 222-223
InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m
Authors: Monat, C Seassal, C Letartre, X Viktorovitch, P Regreny, P Gendry, M Rojo-Romeo, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation: C. Monat et al., InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m, ELECTR LETT, 37(12), 2001, pp. 764-766
Group velocity and propagation losses measurement in a single-line photonic-crystal waveguide on InP membranes
Authors: Letartre, X Seassal, C Grillet, C Rojo-Romeo, P Viktorovitch, P d'Yerville, ML Cassagne, D Jouanin, C
Citation: X. Letartre et al., Group velocity and propagation losses measurement in a single-line photonic-crystal waveguide on InP membranes, APPL PHYS L, 79(15), 2001, pp. 2312-2314
Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP
Authors: Letartre, X Rojo-Romeo, P Tardy, J Bejar, M Gendry, M Py, MA Beck, M Buhlmann, HJ Ren, L Villar, C Sanz-Hervas, A Serrano, JJ Blanco, JM Aguilar, M Marty, O Souliere, V Monteil, Y
Citation: X. Letartre et al., Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP, JPN J A P 1, 38(2B), 1999, pp. 1169-1173
Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE
Authors: Gamez-Cuatzin, H Tardy, J Rojo-Romeo, P Philippe, A Bru-Chevallier, C Souifi, A Guillot, G Martinez-Guerrero, E Feuillet, G Daudin, B Aboughe-Nze, P Monteil, Y
Citation: H. Gamez-cuatzin et al., Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE, PHYS ST S-A, 176(1), 1999, pp. 131-135
2 mu m resonant cavity enhanced InP/InGaAs single quantum well photo-detector
Authors: Jourba, S Besland, MP Gendry, M Garrigues, M Leclercq, JL Rojo-Romeo, P Viktorovich, P Cortial, S Hugon, X Pautet, C
Citation: S. Jourba et al., 2 mu m resonant cavity enhanced InP/InGaAs single quantum well photo-detector, ELECTR LETT, 35(15), 1999, pp. 1272-1274
Risultati: 1-7 |