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Results:
1-7
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Results: 7
Authors:
Hobart, KD
Thompson, PE
Rommel, SL
Dillon, TE
Berger, PR
Simons, DS
Chi, PH
Citation: Kd. Hobart et al., "p-on-n" Si interband tunnel diode grown by molecular beam epitaxy, J VAC SCI B, 19(1), 2001, pp. 290-293
Authors:
Jin, N
Berger, PR
Rommel, SL
Thompson, PE
Hobart, KD
Citation: N. Jin et al., pnp Si resonant interband tunnel diode with symmetrical NDR, ELECTR LETT, 37(23), 2001, pp. 1412-1414
Authors:
Rivas, C
Lake, R
Klimeck, G
Frensley, WR
Fischetti, MV
Thompson, PE
Rommel, SL
Berger, PR
Citation: C. Rivas et al., Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts, APPL PHYS L, 78(6), 2001, pp. 814-816
Authors:
Thompson, PE
Hobart, KD
Twigg, ME
Rommel, SL
Jin, N
Berger, PR
Lake, R
Seabaugh, AC
Chi, P
Citation: Pe. Thompson et al., Epitaxial Si-based tunnel diodes, THIN SOL FI, 380(1-2), 2000, pp. 145-150
Authors:
Dashiell, MW
Troeger, RT
Rommel, SL
Adam, TN
Berger, PR
Guedj, C
Kolodzey, J
Seabaugh, AC
Citation: Mw. Dashiell et al., Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing, IEEE DEVICE, 47(9), 2000, pp. 1707-1714
Authors:
Rommel, SL
Dillon, TE
Berger, PR
Thompson, PE
Hobart, KD
Lake, R
Seabaugh, AC
Citation: Sl. Rommel et al., Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities, IEEE ELEC D, 20(7), 1999, pp. 329-331
Authors:
Thompson, PE
Hobart, KD
Twigg, ME
Jernigan, GG
Dillon, TE
Rommel, SL
Berger, PR
Simons, DS
Chi, PH
Lake, R
Seabaugh, AC
Citation: Pe. Thompson et al., Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy, APPL PHYS L, 75(9), 1999, pp. 1308-1310
Risultati:
1-7
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