Authors:
Rybin, PV
Kulikov, DV
Trushin, YV
Yankov, RA
Voelskow, M
Scharmann, F
Pezoldt, J
Citation: Pv. Rybin et al., Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields, NUCL INST B, 178, 2001, pp. 269-274
Authors:
Kulikov, DV
Trushin, YV
Rybin, PV
Kharlamov, VS
Citation: Dv. Kulikov et al., Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation ofAl+ and N+ and subsequent annealing, TECH PHYS, 44(10), 1999, pp. 1168-1174
Authors:
Rybin, PV
Kulikov, DV
Trushin, YV
Yankov, RA
Ecke, G
Fukarek, W
Skorupa, W
Pezoldt, J
Citation: Pv. Rybin et al., Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions, NUCL INST B, 147(1-4), 1999, pp. 279-285