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Results:
1-23
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Results: 23
Authors:
WALSTRA SV
SAH CT
Citation: Sv. Walstra et Ct. Sah, EXTENSION OF THE MCNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES, Solid-state electronics, 42(4), 1998, pp. 671-673
Authors:
CAI J
SAH CT
Citation: J. Cai et Ct. Sah, THEORY OF THERMALLY STIMULATED CHARGES IN METAL-OXIDE-SEMICONDUCTOR GATE OXIDE, Journal of applied physics, 83(2), 1998, pp. 851-857
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, POSITIVE OXIDE CHARGE FROM HOT HOLE INJECTION DURING CHANNEL-HOT-ELECTRON STRESS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1624-1627
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, REDUCTION OF INTERFACE TRAPS IN P-CHANNEL MOS-TRANSISTORS DURING CHANNEL-HOT-HOLE STRESS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1380-1382
Authors:
SAH CT
NEUGROSCHEL A
HAN KM
Citation: Ct. Sah et al., CURRENT-ACCELERATED CHANNEL HOT-CARRIER STRESS OF MOS-TRANSISTORS, Electronics Letters, 34(2), 1998, pp. 217-219
Authors:
NEUGROSCHEL A
SAH CT
CAO W
Citation: A. Neugroschel et al., INTERFACE-TRAP GENERATION IN MOS-TRANSISTORS AT HIGH-CURRENT DENSITIES, Electronics Letters, 34(19), 1998, pp. 1889-1891
Authors:
WALSTRA SV
SAH CT
Citation: Sv. Walstra et Ct. Sah, THIN OXIDE THICKNESS EXTRAPOLATION FROM CAPACITANCE-VOLTAGE MEASUREMENTS, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1136-1142
Authors:
NEUGROSCHEL A
SAH CT
CARROLL MS
PFAFF KG
Citation: A. Neugroschel et al., BASE CURRENT RELAXATION TRANSIENT IN REVERSE EMITTER-BASE BIAS STRESSED SILICON BIPOLAR JUNCTION TRANSISTORS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 792-800
Authors:
CARROLL MS
NEUGROSCHEL A
SAH CT
Citation: Ms. Carroll et al., DEGRADATION OF SILICON BIPOLAR JUNCTION TRANSISTORS AT HIGH FORWARD CURRENT DENSITIES, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 110-117
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, LINEAR REDUCTION OF DRAIN CURRENT WITH INCREASING INTERFACE RECOMBINATION IN NMOS TRANSISTORS STRESSED BY CHANNEL HOT-ELECTRONS, Electronics Letters, 33(21), 1997, pp. 1821-1822
Authors:
NEUGROSCHEL A
SAH CT
FORD JM
STEELE J
TANG R
STEIN C
Citation: A. Neugroschel et al., COMPARISON OF TIME-TO-FAILURE OF GESI AND SI BIPOLAR-TRANSISTORS, IEEE electron device letters, 17(5), 1996, pp. 211-213
Authors:
NEUGROSCHEL A
SAH CT
CARROLL MS
Citation: A. Neugroschel et al., ACCELERATED REVERSE EMITTER-BASE BIAS STRESS METHODOLOGIES AND TIME-TO-FAILURE APPLICATION, IEEE electron device letters, 17(3), 1996, pp. 112-114
Authors:
SAH CT
NEUGROSCHEL A
HAN KM
KAVALIEROS JT
Citation: Ct. Sah et al., PROFILING INTERFACE TRAPS IN MOS-TRANSISTORS BY THE DC CURRENT-VOLTAGE METHOD, IEEE electron device letters, 17(2), 1996, pp. 72-74
Authors:
NEUGROSCHEL A
SAH CT
CARROLL MS
Citation: A. Neugroschel et al., DEGRADATION OF BIPOLAR-TRANSISTOR CURRENT GAIN BY HOT HOLES DURING REVERSE EMITTER-BASE BIAS STRESS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1286-1290
Authors:
KAVALIEROS JT
SAH CT
Citation: Jt. Kavalieros et Ct. Sah, SEPARATION OF INTERFACE AND NONUNIFORM BRIDE TRAPS BY THE DC CURRENT-VOLTAGE METHOD, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 137-141
Authors:
NEUGROSCHEL A
SAH CT
Citation: A. Neugroschel et Ct. Sah, MEASUREMENT OF BUILT-IN ELECTRIC-FIELD IN BASE OF SI GEXSI1-X/SI HBT WITH LINEARLY-GRADED GE PROFILE/, Electronics Letters, 32(24), 1996, pp. 2280-2282
Authors:
NEUGROSCHEL A
SAH CT
FORD JM
STEELE J
TANG R
STEIN C
WELCH P
WATANABE J
Citation: A. Neugroschel et al., PERFORMANCE COMPARISON ANALYSIS OF GESI AND SI BIPOLAR-TRANSISTORS, Electronics Letters, 32(13), 1996, pp. 1239-1241
Authors:
LU Y
SAH CT
Citation: Y. Lu et Ct. Sah, ENERGY AND MOMENTUM CONSERVATION DURING ENERGETIC-CARRIER GENERATION AND RECOMBINATION IN SILICON, Physical review. B, Condensed matter, 52(8), 1995, pp. 5657-5664
Authors:
LU Y
SAH CT
Citation: Y. Lu et Ct. Sah, THERMAL EMISSION OF TRAPPED HOLES IN THIN SIO2-FILMS, Journal of applied physics, 78(5), 1995, pp. 3156-3159
Authors:
NEUGROSCHEL A
SAH CT
HAN KM
CARROLL MS
NISHIDA T
KAVALIEROS JT
LU Y
Citation: A. Neugroschel et al., DIRECT-CURRENT MEASUREMENTS OF OXIDE AND INTERFACE TRAPS ON OXIDIZED SILICON, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1657-1662
Authors:
NEUGROSCHEL A
SAH CT
CARROLL MS
Citation: A. Neugroschel et al., CURRENT-ACCELERATION FOR RAPID TIME-TO-FAILURE DETERMINATION OF BIPOLAR JUNCTION TRANSISTORS UNDER EMITTER-BASE REVERSE-BIAS STRESS, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1380-1383
Authors:
NEUGROSCHEL A
SAH CT
CARROLL MS
Citation: A. Neugroschel et al., RANDOM TELEGRAPHIC SIGNALS IN SILICON BIPOLAR JUNCTION TRANSISTORS, Applied physics letters, 66(21), 1995, pp. 2879-2881
Authors:
LU Y
SAH CT
Citation: Y. Lu et Ct. Sah, 2 PATHWAYS OF POSITIVE OXIDE-CHARGE BUILDUP DURING ELECTRON-TUNNELINGINTO SILICON DIOXIDE FILM, Journal of applied physics, 76(8), 1994, pp. 4724-4727
Risultati:
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