ACNP - Italian Periodicals Catalogue

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Results: 10

LOW-TEMPERATURE REACTION OF CH4 ON SI(100)

Authors: IZENA A SAKURABA M MATSUURA T MUROTA J

Citation: A. Izena et al., LOW-TEMPERATURE REACTION OF CH4 ON SI(100), Journal of crystal growth, 188(1-4), 1998, pp. 131-136

ATOMIC-ORDER THERMAL NITRIDATION OF SILICON AT LOW-TEMPERATURES

Authors: WATANABE T ICHIKAWA A SAKURABA M MATSUURA T MUROTA J

Citation: T. Watanabe et al., ATOMIC-ORDER THERMAL NITRIDATION OF SILICON AT LOW-TEMPERATURES, Journal of the Electrochemical Society, 145(12), 1998, pp. 4252-4256

ATOMIC-LAYER SURFACE-REACTION OF SIH4 ON GE(100)

Authors: WATANABE T SAKURABA M MATSUURA T MUROTA J

Citation: T. Watanabe et al., ATOMIC-LAYER SURFACE-REACTION OF SIH4 ON GE(100), JPN J A P 1, 36(6B), 1997, pp. 4042-4045

INITIAL GROWTH-CHARACTERISTICS OF GERMANIUM ON SILICON IN LPCVD USINGGERMANE GAS

Authors: KOBAYASHI S SAKURABA M MATSUURA T MUROTA J MIKOSHIBA N

Citation: S. Kobayashi et al., INITIAL GROWTH-CHARACTERISTICS OF GERMANIUM ON SILICON IN LPCVD USINGGERMANE GAS, Journal of crystal growth, 174(1-4), 1997, pp. 686-690

ATOMIC LAYER-BY-LAYER EPITAXY OF SILICON AND GERMANIUM USING FLASH HEATING IN CVD

Authors: MUROTA J SAKURABA M WATANABE T MATSUURA T SAWADA Y

Citation: J. Murota et al., ATOMIC LAYER-BY-LAYER EPITAXY OF SILICON AND GERMANIUM USING FLASH HEATING IN CVD, Journal de physique. IV, 5(C5), 1995, pp. 1101-1108

ATOMIC-LAYER EPITAXY CONTROL OF GE AND SI IN FLASH-HEATING CVD USING GEH4 AND SIH4 GASES

Authors: SAKURABA M MUROTA J WATANABE T SAWADA Y ONO S

Citation: M. Sakuraba et al., ATOMIC-LAYER EPITAXY CONTROL OF GE AND SI IN FLASH-HEATING CVD USING GEH4 AND SIH4 GASES, Applied surface science, 82-3, 1994, pp. 354-358

ADAPTIVE BOUNDARY-TYPE FINITE-ELEMENT METHOD FOR WAVE DIFFRACTION-REFRACTION IN HARBORS

Authors: KASHIYAMA K SAKURABA M

Citation: K. Kashiyama et M. Sakuraba, ADAPTIVE BOUNDARY-TYPE FINITE-ELEMENT METHOD FOR WAVE DIFFRACTION-REFRACTION IN HARBORS, Computer methods in applied mechanics and engineering, 112(1-4), 1994, pp. 185-197

STABILITY OF THE DIMER STRUCTURE FORMED ON SI(100) BY ULTRACLEAN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Authors: SAKURABA M MUROTA J ONO S

Citation: M. Sakuraba et al., STABILITY OF THE DIMER STRUCTURE FORMED ON SI(100) BY ULTRACLEAN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 75(7), 1994, pp. 3701-3703

SILICON ATOMIC LAYER GROWTH USING FLASH HEATING IN CVD

Authors: SAKURABA M MUROTA J ONO S

Citation: M. Sakuraba et al., SILICON ATOMIC LAYER GROWTH USING FLASH HEATING IN CVD, Journal de physique. IV, 3(C3), 1993, pp. 449-456

SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS

Authors: MUROTA J SAKURABA M ONO S

Citation: J. Murota et al., SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS, Applied physics letters, 62(19), 1993, pp. 2353-2355

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