Authors:
SLOBODCHIKOV SV
SALIKHOV KM
YAKOVLEV YP
SAMORUKOV BE
Citation: Sv. Slobodchikov et al., MECHANISMS OF PHOTOCURRENT AMPLIFICATION IN ISOTYPIC N(-GASB-N(O)-GAINASSB-N(+)-GAALASSB HETEROSTRUCTURES()), Technical physics letters, 24(5), 1998, pp. 386-387
Citation: Sv. Slobodchikov et al., CURRENT TRANSPORT IN POROUS P-SI AND PD-POROUS SI STRUCTURES, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 960-962
Citation: Km. Salikhov et al., THE REVERSE SHIFT OF THE EPR LINE OF PARAMAGNETIC CENTERS COUPLED TO SPECIES WITH A FAST PARAMAGNETIC RELAXATION, Applied magnetic resonance, 14(4), 1998, pp. 457-472
Authors:
SLOBODCHIKOV SV
SALIKHOV KM
RUSSU EV
MEREDOV MM
YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF A PD-P(0)-SI-P-SI STRUCTURE WITH A DISORDERED INTERMEDIATE P(0) LAYER, Semiconductors, 31(1), 1997, pp. 11-14
Citation: Km. Salikhov, COMMENT ON A SHAPE OF EPR-SPECTRA OF SPIN-CORRELATED RADICAL PAIRS AND SEPARATE RADICALS ESCAPED GEMINATE RECOMBINATION, Applied magnetic resonance, 13(3-4), 1997, pp. 415-437
Authors:
DOUBINSKII AA
LEBEDEV YS
SALIKHOV KM
MOBIUS K
Citation: Aa. Doubinskii et al., ENDOR AMPLITUDES OF TRIPLET-STATE MOLECULES - II - ORIENTATIONAL DEPENDENCE OF THE NU(P) FREQUENCY LINE AND S-T-0 MIXING, Applied magnetic resonance, 13(3-4), 1997, pp. 459-471
Citation: Ye. Kandrashkin et al., SPIN DYNAMICS AND EPR-SPECTRA OF CONSECUTIVE SPIN-CORRELATED RADICAL PAIRS - MODEL-CALCULATIONS, Applied magnetic resonance, 12(2-3), 1997, pp. 141-166
Authors:
SALIKHOV KM
SCHLUPMANN J
PLATO M
MOBIUS K
Citation: Km. Salikhov et al., CALCULATION OF TRIPLET-SINGLET TRANSITION EFFICIENCIES CONTROLLED BY RELATIVE ROTATIONAL DIFFUSION OF THE 2 CONSTITUENTS OF COVALENTLY-LINKED RADICAL PAIRS, Chemical physics, 215(1), 1997, pp. 23-35
Authors:
DVINSKIKH SV
BUNTKOWSKY G
SALIKHOV KM
VIETH HM
Citation: Sv. Dvinskikh et al., LOW AND ZERO-FIELD STIMULATED NUCLEAR-POLARIZATION IN CYCLIC-KETONES, Chemical physics letters, 268(5-6), 1997, pp. 401-407
Authors:
SALIKHOV KM
SCHNEIDER DJ
SAXENA S
FREED JH
Citation: Km. Salikhov et al., A THEORETICAL APPROACH TO THE ANALYSIS OF ARBITRARY PULSES IN MAGNETIC-RESONANCE (VOL 262, PG 17, 1996), Chemical physics letters, 265(3-5), 1997, pp. 562-562
Authors:
SLOBODCHIKOV SV
RUSSU EV
SALIKHOV KM
MEREDOV MM
YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRIC AND PHOTOELECTRIC CHARACTERISTICS OF A HYBRID ISOTYPIC P-INP-P-INGAAS HETEROSTRUCTURE WITH A PD-P-INP SCHOTTKY-BARRIER, Semiconductors, 30(8), 1996, pp. 725-729
Authors:
SLOBODCHIKOV SV
RUSSU EV
SALIKHOV KM
MEREDOV MM
YAZLYEVA AI
Citation: Sv. Slobodchikov et al., MECHANISM OF CURRENT TRANSPORT AND PHOTOELECTRIC CHARACTERISTICS OF PD-SIN-P-SI STRUCTURES, Semiconductors, 30(4), 1996, pp. 370-372
Authors:
SLOBODCHIKOV SV
RUSSU EV
SALIKHOV KM
MEREDOV MM
YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRICAL-PROPERTIES OF METAL-SEMICONDUCTOR DIODE STRUCTURES BASED ON DISORDERED GAP LAYERS, Semiconductors, 30(2), 1996, pp. 123-126
Authors:
NEFEDEV ES
MUSIN KM
MIRAKOVA TY
KADIROV MK
AMINOV KL
SALIKHOV KM
SILAEV VA
Citation: Es. Nefedev et al., EPR IMAGING STUDY OF PARAMAGNETIC CENTER DISTRIBUTION IN THIOKOL-EPOXY HERMETICS, Applied magnetic resonance, 11(1), 1996, pp. 115-123
Citation: Sv. Slobodchikov et al., TEMPERATURE-DEPENDENCE OF PHOTORESPONSE A CCELERATION OF PHOTOFLOW OFP-INP-P-INGAAS HYBRID HETEROSTRUCTURE WITH PD-P-INP SCHOTTKY DIODE, Pis'ma v Zurnal tehniceskoj fiziki, 22(17), 1996, pp. 41-44
Citation: Km. Salikhov et Ye. Kandrashkin, SPIN COHERENCE EFFECTS IN SEPARATED CHARG E EPR SPECTROSCOPY IN THE PHOTOSYNTHESIS REACTION-CENTER, Uspehi fiziceskih nauk, 166(2), 1996, pp. 207-209
Authors:
SALIKHOV KM
SCHNEIDER DJ
SAXENA S
FREED JH
Citation: Km. Salikhov et al., A THEORETICAL APPROACH TO THE ANALYSIS OF ARBITRARY PULSES IN MAGNETIC-RESONANCE, Chemical physics letters, 262(1-2), 1996, pp. 17-26
Authors:
SLOBODCHIKOV SV
RUSSU EB
SALIKHOV KM
MEREDOV MM
YAZLYEVA AI
Citation: Sv. Slobodchikov et al., CURRENT TRANSPORT IN PD-SIO2-N(P)-SI MIS STRUCTURES AND A 2ND MECHANISM FOR PHOTOCURRENT AMPLIFICATION, Semiconductors, 29(8), 1995, pp. 791-794