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Results: 1-8 |
Results: 8
NEW MEASUREMENT TECHNIQUE FOR SUB-BANDGAP IMPACT IONIZATION CURRENT BY TRANSIENT CHARACTERISTICS OF PARTIALLY DEPLETED SOI MOSFETS
Authors: SARAYA T TAKAMIYA M DUYET TN HIRAMOTO T
Citation: T. Saraya et al., NEW MEASUREMENT TECHNIQUE FOR SUB-BANDGAP IMPACT IONIZATION CURRENT BY TRANSIENT CHARACTERISTICS OF PARTIALLY DEPLETED SOI MOSFETS, JPN J A P 1, 37(3B), 1998, pp. 1271-1273
SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: DUYET TN ISHIKURO H TAKAMIYA M SARAYA T HIRAMOTO T
Citation: Tn. Duyet et al., SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 2, 37(7B), 1998, pp. 855-858
FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE
Authors: MUKAIYAMA T SAITO K ISHIKURO H TAKAMIYA M SARAYA T HIRAMOTO T
Citation: T. Mukaiyama et al., FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE, Solid-state electronics, 42(7-8), 1998, pp. 1623-1626
EXTREMELY LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW-TEMPERATURES
Authors: ISHIKURO H SARAYA T HIRAMOTO T IKOMA T
Citation: H. Ishikuro et al., EXTREMELY LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW-TEMPERATURES, JPN J A P 1, 35(2B), 1996, pp. 858-860
FABRICATION OF SI NANOSTRUCTURES FOR SINGLE-ELECTRON DEVICE APPLICATIONS BY ANISOTROPIC ETCHING
Authors: HIRAMOTO T ISHIKURO H SAITO K FUJII T SARAYA T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., FABRICATION OF SI NANOSTRUCTURES FOR SINGLE-ELECTRON DEVICE APPLICATIONS BY ANISOTROPIC ETCHING, JPN J A P 1, 35(12B), 1996, pp. 6664-6667
CHARACTERIZATION OF PRECISELY WIDTH-CONTROLLED SI QUANTUM WIRES FABRICATED ON SOI SUBSTRATES
Authors: HIRAMOTO T ISHIKURO H FUJII T SARAYA T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., CHARACTERIZATION OF PRECISELY WIDTH-CONTROLLED SI QUANTUM WIRES FABRICATED ON SOI SUBSTRATES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 95-97
COULOMB-BLOCKADE OSCILLATIONS AT ROOM-TEMPERATURE IN A SI QUANTUM-WIRE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FABRICATED BY ANISOTROPIC ETCHING ON A SILICON-ON-INSULATOR SUBSTRATE
Authors: ISHIKURO H FUJII T SARAYA T HASHIGUCHI G HIRAMOTO T IKOMA T
Citation: H. Ishikuro et al., COULOMB-BLOCKADE OSCILLATIONS AT ROOM-TEMPERATURE IN A SI QUANTUM-WIRE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FABRICATED BY ANISOTROPIC ETCHING ON A SILICON-ON-INSULATOR SUBSTRATE, Applied physics letters, 68(25), 1996, pp. 3585-3587
ELECTRICAL CHARACTERIZATION OF C-60 EVAPORATED-FILMS USING MOS STRUCTURE
Authors: KUDO K SARAYA T KUNIYOSHI S TANAKA K
Citation: K. Kudo et al., ELECTRICAL CHARACTERIZATION OF C-60 EVAPORATED-FILMS USING MOS STRUCTURE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 267, 1995, pp. 423-428
Risultati: 1-8 |