Citation: C. Bose et Ck. Sarkar, EFFECT OF A PARABOLIC POTENTIAL ON THE IMPURITY BINDING-ENERGY IN SPHERICAL QUANTUM DOTS, Physica. B, Condensed matter, 253(3-4), 1998, pp. 238-241
Citation: P. Banerji et al., LONGITUDINAL DIFFUSIVITY IN N-TYPE HG0.8CD0.2TE IN THE EXTREME QUANTUM LIMIT - EFFECT OF ALLOY SCATTERING, Physical review. B, Condensed matter, 57(24), 1998, pp. 15345-15348
Citation: C. Bose et Ck. Sarkar, PERTURBATION CALCULATION OF DONOR STATES IN A SPHERICAL QUANTUM-DOT, Solid-state electronics, 42(9), 1998, pp. 1661-1663
Citation: P. Samanta et Ck. Sarkar, A NEW APPROACH TO INVESTIGATE GATE OXIDE DEGRADATION OF MOS CAPACITORS DURING FOWLER-NORDHEIM STRESS AT LOW ELECTRON FLUENCE, Solid-state electronics, 42(1), 1998, pp. 165-171
Citation: P. Samanta et Ck. Sarkar, COUPLED CHARGE TRAPPING DYNAMICS IN THIN SIO2 GATE OXIDE UNDER FOWLER-NORDHEIM-STRESS AT LOW ELECTRON FLUENCE, Journal of applied physics, 83(5), 1998, pp. 2662-2669
Citation: C. Bose et al., EFFECT OF LEVEL BROADENING ON THE PHOTOELECTRIC-EMISSION FROM A SINGLE-QUANTUM-WELL IN ULTRATHIN-FILM UNDER THE INFLUENCE OF A QUANTIZING MAGNETIC-FIELD, Nanostructured materials, 8(1), 1997, pp. 83-90
Citation: P. Banerji et al., EFFECT OF ALLOY SCATTERING ON THE LOW-FIELD MICROWAVE MOBILITY IN N-HG0.8CD0.2TE IN THE EXTREME QUANTUM LIMIT, Physica. B, Condensed matter, 229(3-4), 1997, pp. 404-408
Citation: P. Banerji et al., ALLOY SCATTERING LIMITED LONGITUDINAL RESISTIVITY IN N-TYPE HG0.8CD0.2TE IN THE EXTREME QUANTUM LIMIT - SCREENING EFFECT, Physical review. B, Condensed matter, 56(3), 1997, pp. 1001-1004
Citation: C. Bose et al., ELECTRIC-FIELD-INDUCED SHIFTS OF ELECTRONIC-ENERGY LEVELS IN SPHERICAL QUANTUM-DOT, Solid-state electronics, 41(9), 1997, pp. 1383-1385
Citation: Ab. Maity et al., CONSISTENT CALCULATIONS OF MULTIQUANTUM-WELL SEMICONDUCTOR OPTICAL-WAVE GUIDE MODES INCLUDING THE EFFECTS OF SIZE-QUANTIZATION AND 2D-EXCITONS ON THE REFRACTIVE-INDEX, Solid-state electronics, 41(5), 1997, pp. 798-801
Citation: P. Samanta et Ck. Sarkar, ANALYSIS OF POSITIVE CHARGE TRAPPING IN SILICON DIOXIDE OF MOS CAPACITORS DURING FOWLER-NORDHEIM STRESS, Solid-state electronics, 41(3), 1997, pp. 459-464
Citation: P. Samanta et Ck. Sarkar, HOLE TRAPPING IN THIN GATE OXIDES DURING FOWLER-NORDHEIM CONSTANT-CURRENT STRESS, Semiconductor science and technology, 11(2), 1996, pp. 181-186
Citation: S. Bhaumik et Ck. Sarkar, ENERGY-LOSS RATE OF HOT-ELECTRONS IN N-HGXCD1-XTE AT HIGH-TEMPERATURES IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD, Physica status solidi. b, Basic research, 187(2), 1995, pp. 617-623
Citation: P. Samanta et Ck. Sarkar, POSITIVE CHARGE TRAPPING IN THIN GATE OXIDES OF MOS CAPACITORS DURINGCONSTANT-CURRENT AND VOLTAGE FOWLER-NORDHEIM STRESS, Physica status solidi. a, Applied research, 151(2), 1995, pp. 501-511
Citation: K. Santra et Ck. Sarkar, EFFECT OF QUANTUM SCREENING ON THE LOW-FIELD LONGITUDINAL MOBILITY INN-INSB IN THE EXTREME QUANTUM LIMIT AT LOW-TEMPERATURES, Physica scripta. T, 50(4), 1994, pp. 442-444
Citation: K. Santra et Ck. Sarkar, ENERGY-LOSS RATE OF HOT CARRIERS IN SEMICONDUCTORS WITH NONEQUILIBRIUM PHONON DISTRIBUTION IN THE EXTREME QUANTUM LIMIT AT LOW-TEMPERATURES(VOL 47, PG 3598, 1993), Physical review. B, Condensed matter, 49(3), 1994, pp. 2285-2285
Citation: P. Banerji et Ck. Sarkar, EFFECT OF BAND NONPARABOLICITY ON THE HOT-ELECTRON LONGITUDINAL CONDUCTIVITY IN N-HG1-XCDXTE IN THE EXTREME QUANTUM LIMIT MAGNETIC-FIELDS AT LOW-TEMPERATURES, Solid state communications, 90(5), 1994, pp. 325-328
Citation: P. Banerji et Ck. Sarkar, EFFECT OF ALLOY SCATTERING ON THE LONGITUDINAL HOT-ELECTRON DRIFT VELOCITY IN N-HG0.8CD0.2TE IN THE EXTREME-QUANTUM-LIMIT MAGNETIC-FIELDS AT LOW-TEMPERATURES, Journal of applied physics, 75(2), 1994, pp. 1231-1233
Citation: S. Bhaumik et Ck. Sarkar, TRANSIENT-RESPONSE OF HOT-ELECTRONS IN NARROW-GAP SEMICONDUCTORS AT LOW-TEMPERATURES IN THE PRESENCE OF A LONGITUDINAL QUANTIZING MAGNETIC-FIELD, Czechoslovak journal of Physics, 44(9), 1994, pp. 871-876
Citation: K. Santra et Ck. Sarkar, THE WARM ELECTRON COEFFICIENT IN N-INSB IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 180(2), 1993, pp. 552-552
Citation: P. Banerji et Ck. Sarkar, EFFECT OF QUANTUM SCREENING ON THE MOBILITY OF N-INSB AT LOW-TEMPERATURES IN THE EXTREME QUANTUM LIMIT, Physica status solidi. b, Basic research, 180(2), 1993, pp. 552-552
Citation: P. Banerji et Ck. Sarkar, EFFECT OF QUANTUM SCREENING ON THE MOBILITY OF N-INSB AT LOW-TEMPERATURES IN THE EXTREME QUANTUM LIMIT, Physica status solidi. b, Basic research, 179(2), 1993, pp. 71-74
Citation: K. Santra et Ck. Sarkar, THE WARM ELECTRON COEFFICIENT IN N-INSB IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 176(2), 1993, pp. 459-463
Citation: S. Bhaumik et Ck. Sarkar, SMALL-SIGNAL AC RESPONSE OF HOT-ELECTRONS IN NARROW-GAP SEMICONDUCTORS IN THE EXTREME QUANTUM LIMIT AT LOW-TEMPERATURES, Semiconductor science and technology, 7(3), 1992, pp. 311-314