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1-25
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Results: 25
Authors:
CHANG JP
MAHOROWALA AP
SAWIN HH
Citation: Jp. Chang et al., PLASMA-SURFACE KINETICS AND FEATURE PROFILE EVOLUTION IN CHLORINE ETCHING OF POLYSILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 217-224
Authors:
MOHINDRA V
CHAE H
SAWIN HH
MOCELLA MT
Citation: V. Mohindra et al., ABATEMENT OF PERFLUOROCOMPOUNDS (PFCS) IN A MICROWAVE TUBULAR REACTORUSING O-2 AS AN ADDITIVE GAS, IEEE transactions on semiconductor manufacturing, 10(3), 1997, pp. 399-411
Authors:
CHANG JP
ZHANG Z
XU H
SAWIN HH
BUTTERBAUGH JW
Citation: Jp. Chang et al., TRANSITION-METAL CLEANING USING THERMAL BEAMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 2959-2967
Authors:
CHIANG TP
SAWIN HH
THOMPSON CV
Citation: Tp. Chiang et al., SURFACE KINETIC-STUDY OF ION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR FOCUSED ION-BEAM APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3104-3114
Authors:
CHIANG TP
SAWIN HH
THOMPSON CV
Citation: Tp. Chiang et al., ION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF HIGH-PURITY CU FILMS AT ROOM-TEMPERATURE USING A MICROWAVE-DISCHARGE H ATOM BEAM SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2677-2686
Authors:
CHANG JP
ARNOLD JC
ZAU GCH
SHIN HS
SAWIN HH
Citation: Jp. Chang et al., KINETIC-STUDY OF LOW-ENERGY ARGON ION-ENHANCED PLASMA-ETCHING OF POLYSILICON WITH ATOMIC MOLECULAR CHLORINE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1853-1863
Authors:
WONG K
BONING DS
SAWIN HH
BUTLER SW
SACHS EM
Citation: K. Wong et al., END-POINT PREDICTION FOR POLYSILICON PLASMA ETCH VIA OPTICAL-EMISSIONINTERFEROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1403-1408
KINETIC-STUDY OF LOW-ENERGY ION-ENHANCED POLYSILICON ETCHING USING CL, CL-2, AND CL+ BEAM SCATTERING
Authors:
CHANG JP
SAWIN HH
Citation: Jp. Chang et Hh. Sawin, KINETIC-STUDY OF LOW-ENERGY ION-ENHANCED POLYSILICON ETCHING USING CL, CL-2, AND CL+ BEAM SCATTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 610-615
Authors:
WOODWORTH JR
RILEY ME
MEISTER DC
ARAGON BP
LE MS
SAWIN HH
Citation: Jr. Woodworth et al., ION ENERGY AND ANGULAR-DISTRIBUTIONS IN INDUCTIVELY-COUPLED RADIO-FREQUENCY DISCHARGES IN ARGON, Journal of applied physics, 80(3), 1996, pp. 1304-1311
Authors:
WESTERHEIM AC
LABUN AH
DUBASH JH
ARNOLD JC
SAWIN HH
YUWANG V
Citation: Ac. Westerheim et al., SUBSTRATE BIAS EFFECTS IN HIGH-ASPECT-RATIO SIO2 CONTACT ETCHING USING AN INDUCTIVELY-COUPLED PLASMA REACTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 853-858
Authors:
GRAY DC
BUTTERBAUGH JW
HIATT CF
LAWING AS
SAWIN HH
Citation: Dc. Gray et al., PHOTOCHEMICAL DRY-ETCHING OF DOPED AND UNDOPED SILICON-OXIDES, Journal of the Electrochemical Society, 142(11), 1995, pp. 3859-3863
Authors:
GRAY DC
BUTTERBAUGH JW
HIATT CF
LAWING AS
SAWIN HH
Citation: Dc. Gray et al., PHOTOCHEMICAL DRY STRIPPING OF SILICON-NITRIDE FILMS, Journal of the Electrochemical Society, 142(11), 1995, pp. 3919-3923
Authors:
TEPERMEISTER I
BLAYO N
KLEMENS FP
IBBOTSON DE
GOTTSCHO RA
LEE JTC
SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2310-2321
Authors:
TEPERMEISTER I
IBBOTSON DE
LEE JTC
SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .2. LANGMUIR PROBE STUDIES OF A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2322-2332
Authors:
GIBSON GW
SAWIN HH
TEPERMEISTER I
IBBOTSON DE
LEE JTC
Citation: Gw. Gibson et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .3. ION ENERGY-DISTRIBUTION FUNCTIONS FOR A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2333-2341
Authors:
BLAYO N
TEPERMEISTER I
BENTON JL
HIGASHI GS
BOONE T
ONUOHA A
KLEMENS FP
IBBOTSON DE
SAWIN HH
Citation: N. Blayo et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .4. PLASMA-INDUCED DAMAGE IN A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1340-1350
Authors:
ARNOLD JC
SAWIN HH
DALVIE M
HAMAGUCHI S
Citation: Jc. Arnold et al., SIMULATION OF SURFACE-TOPOGRAPHY EVOLUTION DURING PLASMA-ETCHING BY THE METHOD OF CHARACTERISTICS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(3), 1994, pp. 620-635
Authors:
GRAY DC
MOHINDRA V
SAWIN HH
Citation: Dc. Gray et al., REDEPOSITION KINETICS IN FLUOROCARBON PLASMA-ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 354-364
Authors:
SAWIN HH
Citation: Hh. Sawin, CHALLENGES IN DRY-ETCHING - UNIFORMITY, SELECTIVITY, PATTERN DEPENDENCIES, DAMAGE, AND CLEANING, Microelectronic engineering, 23(1-4), 1994, pp. 15-21
Authors:
HARGIS PJ
GREENBERG KE
MILLER PA
GERARDO JB
TORCZYNSKI JR
RILEY ME
HEBNER GA
ROBERTS JR
OLTHOFF JK
WHETSTONE JR
VANBRUNT RJ
SOBOLEWSKI MA
ANDERSON HM
SPLICHAL MP
MOCK JL
BLETZINGER P
GARSCADDEN A
GOTTSCHO RA
SELWYN G
DALVIE M
HEIDENREICH JE
BUTTERBAUGH JW
BRAKE ML
PASSOW ML
PENDER J
LUJAN A
ELTA ME
GRAVES DB
SAWIN HH
KUSHNER MJ
VERDEYEN JT
HORWATH R
TURNER TR
Citation: Pj. Hargis et al., THE GASEOUS ELECTRONICS CONFERENCE RADIOFREQUENCY REFERENCE CELL - A DEFINED PARALLEL-PLATE RADIOFREQUENCY SYSTEM FOR EXPERIMENTAL AND THEORETICAL-STUDIES OF PLASMA-PROCESSING DISCHARGES, Review of scientific instruments, 65(1), 1994, pp. 140-154
Authors:
DALTON TJ
CONNER WT
SAWIN HH
Citation: Tj. Dalton et al., INTERFEROMETRIC REAL-TIME MEASUREMENT OF UNIFORMITY FOR PLASMA-ETCHING, Journal of the Electrochemical Society, 141(7), 1994, pp. 1893-1900
Authors:
HUPPERT GL
SAWIN HH
BROWN RA
Citation: Gl. Huppert et al., SPECTRAL ELEMENT ANALYSIS OF RADIOFREQUENCY GLOW-DISCHARGES, Chemical Engineering Science, 49(10), 1994, pp. 1601-1611
Authors:
ARNOLD JC
GRAY DC
SAWIN HH
Citation: Jc. Arnold et al., INFLUENCE OF REACTANT TRANSPORT ON FLUORINE REACTIVE ION ETCHING OF DEEP TRENCHES IN SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2071-2080
Authors:
GRAY DC
TEPERMEISTER I
SAWIN HH
Citation: Dc. Gray et al., PHENOMENOLOGICAL MODELING OF ION-ENHANCED SURFACE KINETICS IN FLUORINE-BASED PLASMA-ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1243-1257
Authors:
DALTON TJ
ARNOLD JC
SAWIN HH
SWAN S
CORLISS D
Citation: Tj. Dalton et al., MICROTRENCH FORMATION IN POLYSILICON PLASMA-ETCHING OVER THIN GATE OXIDE, Journal of the Electrochemical Society, 140(8), 1993, pp. 2395-2401
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1-25
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