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Results: 1-17 |
Results: 17

Authors: THIEDE A WANG ZG SCHLECHTWEG M LANG M LEBER P LAO ZH NOWOTNY U HURM V RIEGERMOTZER M LUDWIG M SEDLER M KOHLER K BRONNER W HORNUNG J HULSMANN A KAUFEL G RAYNOR B SCHNEIDER J JAKOBUS T SCHROTH J BERROTH M
Citation: A. Thiede et al., MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS, IEEE transactions on very large scale integration (VLSI) systems, 6(1), 1998, pp. 6-17

Authors: LAO Z HURM V BRONNER W HULSMANN A JAKOBUS T KOHLER K LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M THIEDE A
Citation: Z. Lao et al., 20-GB S 14-K-OMEGA TRANSIMPEDANCE LONG-WAVELENGTH MSM-HEMT PHOTORECEIVER OEIC/, IEEE photonics technology letters, 10(5), 1998, pp. 710-712

Authors: LAO ZH HURM V THIEDE A BERROTH M LUDWIG M LIENHART H SCHLECHTWEG M HORNUNG J BRONNER W KOHLER K HULSMANN A KAUFEL G JAKOBUS T
Citation: Zh. Lao et al., MODULATOR DRIVER AND PHOTORECEIVER FOR 20 GB S OPTIC-FIBER LINKS/, Journal of lightwave technology, 16(8), 1998, pp. 1491-1497

Authors: LAO ZH THIEDE A NOWOTNY U LIENHART H HURM V SCHLECHTWEG M HORNUNG J BRONNER W KOHLER K HULSMANN A RAYNOR B JAKOBUS T
Citation: Zh. Lao et al., 40-GB S HIGH-POWER MODULATOR DRIVER IC FOR LIGHTWAVE COMMUNICATION-SYSTEMS/, IEEE journal of solid-state circuits, 33(10), 1998, pp. 1520-1526

Authors: HURM V BENZ W BRONNER W HULSMANN A JAKOBUS T KOHLER K LEVEN A LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M THIEDE A
Citation: V. Hurm et al., 40 GBIT S 1.55 MU-M PIN-HEMT PHOTORECEIVER MONOLITHICALLY INTEGRATED ON 3IN GAAS SUBSTRATE/, Electronics Letters, 34(21), 1998, pp. 2060-2062

Authors: LAO Z THIEDE A HORNUNG J SCHLECHTWEG M LIENHART H BRONNER W HULSMANN A JAKOBUS T SEIBEL J SEDLER M KAUFEL G
Citation: Z. Lao et al., 55GHZ DYNAMIC FREQUENCY-DIVIDER IC, Electronics Letters, 34(20), 1998, pp. 1973-1974

Authors: LANG M LAO ZH SCHLECHTWEG M THIEDE A RIEGERMOTZER M SEDLER M BRONNER W KAUFEL G KOHLER K HULSMANN A RAYNOR B
Citation: M. Lang et al., 20-40 GB S 0.2-MU-M GAAS HEMT CHIP SET FOR OPTICAL-DATA RECEIVER/, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1384-1393

Authors: LAO ZH BRONNER W THIEDE A SCHLECHTWEG M HULSMANN A RIEGERMOTZER M KAUFEL G RAYNOR B SEDLER M
Citation: Zh. Lao et al., 35-GHZ STATIC AND 48-GHZ DYNAMIC FREQUENCY-DIVIDER ICS USING 0.2-MU-MALGAAS GAAS-HEMTS/, IEEE journal of solid-state circuits, 32(10), 1997, pp. 1556-1562

Authors: HURM V BENZ W BRONNER W FINK T KAUFEL G KOHLER K LAO Z LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M WINDSCHEIF J
Citation: V. Hurm et al., 20 GBIT S LONG-WAVELENGTH MONOLITHIC INTEGRATED PHOTORECEIVER GROWN ON GAAS/, Electronics Letters, 33(7), 1997, pp. 624-626

Authors: LAO Z BOSCH R HURM V THIEDE A SCHLECHTWEG M BRONNER W HORNUNG J HULSMANN A JAKOBUS T
Citation: Z. Lao et al., DC 30GHZ BANDWIDTH AND 36DB GAIN LIMITING AMPLIFIER FOR 40GBIT S OPTICAL-TRANSMISSION SYSTEMS/, Electronics Letters, 33(25), 1997, pp. 2139-2141

Authors: HURM V BENZ W BRONNER W DAMMANN M JAKOBUS T KAUFEL G KOHLER K LAO Z LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M
Citation: V. Hurm et al., 10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/, Electronics Letters, 33(19), 1997, pp. 1653-1654

Authors: SCHLECHTWEG M HAYDL WH BANGERT A BRAUNSTEIN J TASKER PJ VERWEYEN L MASSLER H BRONNER W HULSMANN A KOHLER K
Citation: M. Schlechtweg et al., COPLANAR MILLIMETER-WAVE ICS FOR W-BAND APPLICATIONS USING 0.15 MU-M PSEUDOMORPHIC MODFETS, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1426-1434

Authors: HULSMANN A MUHLFRIEDEL E RAYNOR B GLORER K BRONNER W KOHLER K SCHNEIDER J BRAUNSTEIN J SCHLECHTWEG M TASKER P THIEDE A JAKOBUS T
Citation: A. Hulsmann et al., 0.15 MU-M T-GATE E-BEAM LITHOGRAPHY USING CROSS-LINKED P(MMA MAA) DEVELOPED IN ORTHO-XYLENE RESULTING IN HIGH-CONTRAST AND HIGH PLASMA STABILITY FOR DRY-ETCHED RECESS GATE PSEUDOMORPHIC MODFETS FOR MMIC PRODUCTION/, Microelectronic engineering, 23(1-4), 1994, pp. 437-440

Authors: BRAUNSTEIN J TASKER PJ SCHLECHTWEG M HULSMANN A KAUFEL G KOHLER K
Citation: J. Braunstein et al., RELATING MU-WAVE MAPPED DATA TO PHYSICAL PARAMETERS FOR MODFETS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 37-40

Authors: BOSCH R TASKER PJ SCHLECHTWEG M BRAUNSTEIN J REINERT W
Citation: R. Bosch et al., LUMPED ELEMENT 12 GHZ LNA MMIC USING INGAAS GAAS MODFETS WITH OPTIMIZED GATE WIDTH AND REACTIVE FEEDBACK/, Electronics Letters, 29(15), 1993, pp. 1394-1395

Authors: SCHLECHTWEG M TASKER PJ REINERT W BRAUNSTEIN J HAYDL W HULSMANN A KOHLER K
Citation: M. Schlechtweg et al., HIGH-GAIN 70-80 GHZ MMIC AMPLIFIERS IN COPLANAR WAVE-GUIDE TECHNOLOGY, Electronics Letters, 29(12), 1993, pp. 1119-1120

Authors: BRAUNSTEIN J TASKER PJ HULSMANN A SCHLECHTWEG M KOHLER K BRONNER W HAYDL W
Citation: J. Braunstein et al., VERY BROAD-BAND DISTRIBUTED-AMPLIFIER TO 75-GHZ, Electronics Letters, 29(10), 1993, pp. 851-853
Risultati: 1-17 |