Authors: TEERLINCK I MERTENS PW SCHMIDT HF MEURIS M HEYNS MM

Citation: I. Teerlinck et al., IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(10), 1996, pp. 3323-3327

Authors: SCHMIDT HF MEURIS M MERTENS PW ROTONDARO ALP HEYNS MM HURD TQ HATCHER Z

Citation: Hf. Schmidt et al., H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY, JPN J A P 1, 34(2B), 1995, pp. 727-731

Authors: MEURIS M MERTENS PW OPDEBEECK A SCHMIDT HF DEPAS M VEREECKE G HEYNS MM PHILIPOSSIAN A

Citation: M. Meuris et al., THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES, Solid state technology, 38(7), 1995, pp. 109

Authors: ROTONDARO ALP MEURIS M SCHMIDT HF HEYNS MM CLAEYS C HELLEMANS L SNAUWAERT J

Citation: Alp. Rotondaro et al., SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING, Journal of the Electrochemical Society, 142(1), 1995, pp. 211-216

Authors: MEURIS M VERHAVERBEKE S MERTENS PW SCHMIDT HF HEYNS MM KUBOTA M PHILIPOSSIAN A DILLENBECK K GRAF D SCHNEGG A DEBLANK R

Citation: M. Meuris et al., CLEANING TECHNOLOGY FOR IMPROVED GATE OXIDE INTEGRITY, Microelectronic engineering, 22(1-4), 1993, pp. 21-28