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Results: 1-11 |
Results: 11
SYNTHESIS OF SIC BY HIGH-TEMPERATURE C- THE ROLE OF SI( IMPLANTATION INTO SIO2 )SIO2 INTERFACE/
Authors: FREY L STOEMENOS J SCHORK R NEJIM A HEMMENT PLF
Citation: L. Frey et al., SYNTHESIS OF SIC BY HIGH-TEMPERATURE C- THE ROLE OF SI( IMPLANTATION INTO SIO2 )SIO2 INTERFACE/, Journal of the Electrochemical Society, 144(12), 1997, pp. 4314-4320
HIGH-DOSE GE-TEMPERATURE( IMPLANTATION INTO SILICON AT ELEVATED SUBSTRATE)
Authors: CHEN NX SCHORK R RYSSEL H
Citation: Nx. Chen et al., HIGH-DOSE GE-TEMPERATURE( IMPLANTATION INTO SILICON AT ELEVATED SUBSTRATE), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 286-289
MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION DURING ARSENIC IMPLANTATION IN SILICON
Authors: SIMIONESCU A HERZOG S HOBLER G SCHORK R LORENZ J TIAN C STINGEDER G
Citation: A. Simionescu et al., MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION DURING ARSENIC IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(4), 1995, pp. 483-489
APPLICATIONS OF SINGLE-BEAM PHOTOTHERMAL ANALYSIS
Authors: SCHORK R KRUGEL S SCHNEIDER C PFITZNER L RYSSEL H
Citation: R. Schork et al., APPLICATIONS OF SINGLE-BEAM PHOTOTHERMAL ANALYSIS, Journal de physique. IV, 4(C7), 1994, pp. 27-30
ON MODELING OF ION-IMPLANTATION AT HIGH-TEMPERATURES
Authors: PICHLER P SCHORK R
Citation: P. Pichler et R. Schork, ON MODELING OF ION-IMPLANTATION AT HIGH-TEMPERATURES, Radiation effects and defects in solids, 127(3-4), 1994, pp. 367-384
OBSERVATION OF LOCAL SIMOX LAYERS BY MICROPROBE RBS
Authors: KINOMURA A HORINO Y MOKUNO Y CHAYAHARA A KIUCHI M FUJII K TAKAI M LOHNER T RYSSEL H SCHORK R
Citation: A. Kinomura et al., OBSERVATION OF LOCAL SIMOX LAYERS BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 921-924
DIFFUSION AND ACTIVATION OF ARSENIC IMPLANTED AT HIGH-TEMPERATURE IN SILICON
Authors: YU YH SCHORK R PICHLER P RYSSEL H
Citation: Yh. Yu et al., DIFFUSION AND ACTIVATION OF ARSENIC IMPLANTED AT HIGH-TEMPERATURE IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 167-172
RESIDUAL-STRESS DURING LOCAL SIMOX PROCESS - RAMAN MEASUREMENT AND SIMULATION
Authors: SEIDL A TAKAI M SAYAMA H HARAMURA K RYSSEL H SCHORK R KATO K
Citation: A. Seidl et al., RESIDUAL-STRESS DURING LOCAL SIMOX PROCESS - RAMAN MEASUREMENT AND SIMULATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 842-845
OBSERVATION OF BURIED OXIDE LAYERS IN SILICON BY MICROPROBE RBS
Authors: KINOMURA A LOHNER T KATAYAMA Y TAKAI M RYSSEL H SCHORK R CHAYAHARA A HORINO Y FUJII K SATOU M
Citation: A. Kinomura et al., OBSERVATION OF BURIED OXIDE LAYERS IN SILICON BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 77(1-4), 1993, pp. 369-372
A COMPARISON OF SOI TECHNOLOGIES AND MATERIALS, AND PROSPECTIVE FIELDS OF APPLICATION
Authors: RYSSEL H SCHORK R CHEN NX
Citation: H. Ryssel et al., A COMPARISON OF SOI TECHNOLOGIES AND MATERIALS, AND PROSPECTIVE FIELDS OF APPLICATION, Microelectronic engineering, 22(1-4), 1993, pp. 315-322
DIRECT EXPERIMENTAL-EVIDENCE FOR DIFFUSION OF DOPANTS VIA PAIRS WITH INTRINSIC POINT-DEFECTS - RESPONSE
Authors: PICHLER P SCHORK R KLAUSER T RYSSEL H
Citation: P. Pichler et al., DIRECT EXPERIMENTAL-EVIDENCE FOR DIFFUSION OF DOPANTS VIA PAIRS WITH INTRINSIC POINT-DEFECTS - RESPONSE, Applied physics letters, 63(18), 1993, pp. 2576-2577
Risultati: 1-11 |