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Results: 1-16 |
Results: 16
INHOMOGENEOUS STRAIN IN INDIVIDUAL QUANTUM DOTS PROBED BY TRANSPORT MEASUREMENTS
Authors: AKYUZ CD ZASLAVSKY A FREUND LB SYPHERS DA SEDGWICK TO
Citation: Cd. Akyuz et al., INHOMOGENEOUS STRAIN IN INDIVIDUAL QUANTUM DOTS PROBED BY TRANSPORT MEASUREMENTS, Applied physics letters, 72(14), 1998, pp. 1739-1741
RESONANT-TUNNELING SPECTROSCOPY OF COUPLED HOLE SUBBANDS IN STRAINED SI SIGE TRIPLE-BARRIER STRUCTURES/
Authors: FERLAND B AKYUZ CD ZASLAVSKY A SEDGWICK TO
Citation: B. Ferland et al., RESONANT-TUNNELING SPECTROSCOPY OF COUPLED HOLE SUBBANDS IN STRAINED SI SIGE TRIPLE-BARRIER STRUCTURES/, Physical review. B, Condensed matter, 53(3), 1996, pp. 994-997
SIGE SI QUANTUM-WELLS WITH ABRUPT INTERFACES GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION/
Authors: GRUTZMACHER DA SEDGWICK TO SCANDELLA L ZASLAVSKY A POWELL AR IYER SS
Citation: Da. Grutzmacher et al., SIGE SI QUANTUM-WELLS WITH ABRUPT INTERFACES GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION/, Vacuum, 46(8-10), 1995, pp. 947-950
STUDY OF END-OF-RANGE LOOP INTERACTIONS WITH B-DOPED DIFFUSION LAYER(IMPLANT DAMAGE USING A BORON)
Authors: LISTEBARGER JK ROBINSON HG JONES KS LAW ME SIELOFF DD SLINKMAN JA SEDGWICK TO
Citation: Jk. Listebarger et al., STUDY OF END-OF-RANGE LOOP INTERACTIONS WITH B-DOPED DIFFUSION LAYER(IMPLANT DAMAGE USING A BORON), Journal of applied physics, 78(4), 1995, pp. 2298-2302
LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION FOR EPITAXIAL-GROWTH OF SIGE BIPOLAR-TRANSISTORS
Authors: SEDGWICK TO GRUTZMACHER DA
Citation: To. Sedgwick et Da. Grutzmacher, LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION FOR EPITAXIAL-GROWTH OF SIGE BIPOLAR-TRANSISTORS, Journal of the Electrochemical Society, 142(7), 1995, pp. 2458-2463
STRAIN RELAXATION IN SILICON-GERMANIUM MICROSTRUCTURES OBSERVED BY RESONANT-TUNNELING SPECTROSCOPY
Authors: ZASLAVSKY A MILKOVE KR LEE YH FERLAND B SEDGWICK TO
Citation: A. Zaslavsky et al., STRAIN RELAXATION IN SILICON-GERMANIUM MICROSTRUCTURES OBSERVED BY RESONANT-TUNNELING SPECTROSCOPY, Applied physics letters, 67(26), 1995, pp. 3921-3923
HIGH-PERFORMANCE EMITTER-UP DOWN SIGE HBTS
Authors: BURGHARTZ JN JENKINS KA GRUTZMACHER DA SEDGWICK TO STANIS CL
Citation: Jn. Burghartz et al., HIGH-PERFORMANCE EMITTER-UP DOWN SIGE HBTS, IEEE electron device letters, 15(9), 1994, pp. 360-362
CYCLOTRON EFFECTIVE-MASS OF HOLES IN STRAINED SI1-XGEX SI QUANTUM-WELL STRUCTURES/
Authors: CHENG JP KESAN VP GRUTZMACHER DA SEDGWICK TO
Citation: Jp. Cheng et al., CYCLOTRON EFFECTIVE-MASS OF HOLES IN STRAINED SI1-XGEX SI QUANTUM-WELL STRUCTURES/, Surface science, 305(1-3), 1994, pp. 275-279
VALENCE-BAND LANDAU-LEVEL MIXING AND ANISOTROPY IN SI1-XGEX INVESTIGATED BY RESONANT MAGNETOTUNNELING
Authors: ZASLAVSKY A GRUTZMACHER DA LIN SY SMITH TP SEDGWICK TO
Citation: A. Zaslavsky et al., VALENCE-BAND LANDAU-LEVEL MIXING AND ANISOTROPY IN SI1-XGEX INVESTIGATED BY RESONANT MAGNETOTUNNELING, Surface science, 305(1-3), 1994, pp. 307-311
CYCLOTRON EFFECTIVE-MASS OF HOLES IN SI1-XGEX SI QUANTUM-WELLS - STRAIN AND NONPARABOLICITY EFFECTS/
Authors: CHENG JP KESAN VP GRUTZMACHER DA SEDGWICK TO
Citation: Jp. Cheng et al., CYCLOTRON EFFECTIVE-MASS OF HOLES IN SI1-XGEX SI QUANTUM-WELLS - STRAIN AND NONPARABOLICITY EFFECTS/, Applied physics letters, 64(13), 1994, pp. 1681-1683
FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL
Authors: ZASLAVSKY A MILKOVE KR LEE YH CHAN KK STERN F GRUTZMACHER DA RISHTON SA STANIS C SEDGWICK TO
Citation: A. Zaslavsky et al., FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL, Applied physics letters, 64(13), 1994, pp. 1699-1701
INPLANE VALENCE-BAND NONPARABOLICITY AND ANISOTROPY IN STRAINED SI-GEQUANTUM-WELLS
Authors: ZASLAVSKY A SMITH TP GRUTZMACHER DA LIN SY SEDGWICK TO SYPHERS DA
Citation: A. Zaslavsky et al., INPLANE VALENCE-BAND NONPARABOLICITY AND ANISOTROPY IN STRAINED SI-GEQUANTUM-WELLS, Physical review. B, Condensed matter, 48(20), 1993, pp. 15112-15115
OBSERVATION OF VALENCE-BAND LANDAU-LEVEL MIXING BY RESONANT MAGNETOTUNNELING
Authors: ZASLAVSKY A GRUTZMACHER DA LIN SY SMITH TP KIEHL RA SEDGWICK TO
Citation: A. Zaslavsky et al., OBSERVATION OF VALENCE-BAND LANDAU-LEVEL MIXING BY RESONANT MAGNETOTUNNELING, Physical review. B, Condensed matter, 47(23), 1993, pp. 16036-16039
GROWTH-RATE ENHANCEMENT OF HEAVY N-TYPE AND P-TYPE DOPED SILICON DEPOSITED BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
Authors: AGNELLO PD SEDGWICK TO COTTE J
Citation: Pd. Agnello et al., GROWTH-RATE ENHANCEMENT OF HEAVY N-TYPE AND P-TYPE DOPED SILICON DEPOSITED BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES, Journal of the Electrochemical Society, 140(9), 1993, pp. 2703-2709
EFFECTS OF TRACE SURFACE OXIDATION IN LOW-TEMPERATURE EPITAXY-GROWN FROM DICHLOROSILANE
Authors: SEDGWICK TO AGNELLO PD GRUTZMACHER DA
Citation: To. Sedgwick et al., EFFECTS OF TRACE SURFACE OXIDATION IN LOW-TEMPERATURE EPITAXY-GROWN FROM DICHLOROSILANE, Journal of the Electrochemical Society, 140(12), 1993, pp. 3684-3688
GE SEGREGATION IN SIGE SI HETEROSTRUCTURES AND ITS DEPENDENCE ON DEPOSITION TECHNIQUE AND GROWTH ATMOSPHERE/
Authors: GRUTZMACHER DA SEDGWICK TO POWELL A TEJWANI M IYER SS COTTE J CARDONE F
Citation: Da. Grutzmacher et al., GE SEGREGATION IN SIGE SI HETEROSTRUCTURES AND ITS DEPENDENCE ON DEPOSITION TECHNIQUE AND GROWTH ATMOSPHERE/, Applied physics letters, 63(18), 1993, pp. 2531-2533
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