Authors: GUTKIN AA RESHCHIKOV MA SEDOV VE PIOTROWSKI T PULTORAK J

Citation: Aa. Gutkin et al., OPTICAL CHARACTERISTICS OF 1.18-EV LUMINESCENCE BAND COMPLEXES IN N-GAAS-SN(SI) - RESULTS OF A PHOTOLUMINESCENCE STUDY WITH POLARIZED RESONANT EXCITATION, Semiconductors, 32(1), 1998, pp. 33-39

Authors: GUTKIN AA RESHCHIKOV MA SEDOV VE

Citation: Aa. Gutkin et al., POLARIZATION PHOTOLUMINESCENCE STUDY OF THE COMPLEX VGATEAS IN N-TYPEGAAS IN THE TEMPERATURE-RANGE 77-230 K, Semiconductors, 31(9), 1997, pp. 908-915

Authors: AVERKIEV NS GUTKIN AA ILINSKII SY RESHCHIKOV MA SEDOV VE

Citation: Ns. Averkiev et al., MODEL OF THE JAHN-TELLER COMPLEX FORMED IN GAAS BY A GALLIUM VACANCY AND A DONOR SUBSTITUTING FOR A GALLIUM ATOM, Zeitschrift für physikalische Chemie, 200, 1997, pp. 209-215

Authors: GUTKIN AA RESHCHIKOV MA SEDOV VE

Citation: Aa. Gutkin et al., MECHANISM FOR THE LOW-TEMPERATURE ALIGNMENT OF DISTORTIONS OF THE VGATEAS COMPLEXES IN N-TYPE GAAS UNDER UNIAXIAL PRESSURE, Zeitschrift für physikalische Chemie, 200, 1997, pp. 217-224

Authors: AVERKIEV NS GUTKIN AA RESHCHIKOV MA SEDOV VE

Citation: Ns. Averkiev et al., OPTICAL AND PIEZOSPECTROSCOPIC PROPERTIES AND THE STRUCTURE OF GALLIUM-VACANCY-SILICON COMPLEXES IN N-TYPE GAAS - COMPARISON WITH GALLIUM-VACANCY-TIN COMPLEXES, Semiconductors, 30(6), 1996, pp. 595-601