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Results: 1-8 |
Results: 8
DIFFUSION AND ELECTRICAL ACTIVATION AFTER A RAPID THERMAL ANNEALING OF AN AS AND B-CO-IMPLANTED POLYSILICON LAYER
Authors: GONTRAND C SELLITTO P TABIKH S LATRECHE S KAMINSKI A
Citation: C. Gontrand et al., DIFFUSION AND ELECTRICAL ACTIVATION AFTER A RAPID THERMAL ANNEALING OF AN AS AND B-CO-IMPLANTED POLYSILICON LAYER, Journal de physique. III, 7(1), 1997, pp. 47-58
PRESSURE-INDUCED HALL-EFFECT SPECTROSCOPY OF SILICON DX-STATES IN PLANAR-DOPED GAAS-ALAS SUPERLATTICES
Authors: SELLITTO P SICART J ROBERT JL PLANEL R
Citation: P. Sellitto et al., PRESSURE-INDUCED HALL-EFFECT SPECTROSCOPY OF SILICON DX-STATES IN PLANAR-DOPED GAAS-ALAS SUPERLATTICES, Physical review. B, Condensed matter, 51(23), 1995, pp. 16778-16784
DETERMINATION OF THE ENERGETICAL SEPARATION OF DX STATES IN GAAS AND IN ALAS BY USING PLANAR-DOPED SUPERLATTICES
Authors: ROBERT JL SELLITTO P GOUGAM A SICART J PLANEL R
Citation: Jl. Robert et al., DETERMINATION OF THE ENERGETICAL SEPARATION OF DX STATES IN GAAS AND IN ALAS BY USING PLANAR-DOPED SUPERLATTICES, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 615-618
HALL-EFFECT CHARACTERIZATION OF SILICON ACTIVATION AND SEGREGATION INPLANAR-DOPED GAAS-ALAS SUPERLATTICES
Authors: SELLITTO P SICART J ROBERT JL PLANEL R
Citation: P. Sellitto et al., HALL-EFFECT CHARACTERIZATION OF SILICON ACTIVATION AND SEGREGATION INPLANAR-DOPED GAAS-ALAS SUPERLATTICES, Applied physics letters, 67(7), 1995, pp. 989-991
ELECTRICAL AND STRUCTURAL-PROPERTIES OF RAPID THERMALLY ANNEALED BORON-DOPED SILICON FILMS DEPOSITED BY PLASMAS-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: JEANJEAN P SICART J SELLITTO P ROBERT JL BUSTARRET E GRIESHABER W CALI J LEBERRE M LEMITI M PINARD P CONEDERA V
Citation: P. Jeanjean et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF RAPID THERMALLY ANNEALED BORON-DOPED SILICON FILMS DEPOSITED BY PLASMAS-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 76(8), 1994, pp. 4682-4688
EVIDENCE OF BISTABLE SHALLOW-DEEP SILICON DONORS IN GAAS-ALAS SUPERLATTICES
Authors: SELLITTO P SICART J ROBERT JL
Citation: P. Sellitto et al., EVIDENCE OF BISTABLE SHALLOW-DEEP SILICON DONORS IN GAAS-ALAS SUPERLATTICES, Journal of applied physics, 75(11), 1994, pp. 7356-7360
EVIDENCE OF SILICON INTERDIFFUSION IN SELECTIVELY DOPED GAAS-ALAS SUPERLATTICES BY HALL MEASUREMENTS
Authors: SELLITTO P JEANJEAN P SICART J ROBERT JL PLANEL R
Citation: P. Sellitto et al., EVIDENCE OF SILICON INTERDIFFUSION IN SELECTIVELY DOPED GAAS-ALAS SUPERLATTICES BY HALL MEASUREMENTS, Journal of applied physics, 74(12), 1993, pp. 7166-7172
DOPANT ACTIVATION AND HALL-MOBILITY IN B-IMPLANTED AND AS-IMPLANTED POLYSILICON FILMS AFTER RAPID OR CONVENTIONAL THERMAL ANNEALING
Authors: JEANJEAN P SELLITTO P SICART J ROBERT JL CHAUSSEMY G LAUGIER A
Citation: P. Jeanjean et al., DOPANT ACTIVATION AND HALL-MOBILITY IN B-IMPLANTED AND AS-IMPLANTED POLYSILICON FILMS AFTER RAPID OR CONVENTIONAL THERMAL ANNEALING, Semiconductor science and technology, 6(12), 1991, pp. 1130-1134
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