Authors:
ASAHI H
KIM SG
SETA M
ASAMI K
WATANABE H
OGURA T
GONDA S
Citation: H. Asahi et al., OPTICAL-PROPERTIES OF ATOMIC LAYER GROWN INAS ALSB QUANTUM-WELL STRUCTURES BY GAS-SOURCE MIGRATION-ENHANCED EPITAXY/, Applied surface science, 82-3, 1994, pp. 109-114
Authors:
KIM SG
ASAHI H
SETA M
ASAMI K
GONDA S
YANO M
INOUE M
Citation: Sg. Kim et al., OPTICAL-PROPERTIES OF INAS ALSB SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 310-314
Citation: M. Seta et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY MIGRATION-ENHANCED EPITAXY GROWTH OF INAS ALSB SUPERLATTICES/, Journal of applied physics, 74(8), 1993, pp. 5033-5037
Authors:
KIM SG
ASAHI H
SETA M
EMURA S
WATANABE H
GONDA S
TANOUE H
Citation: Sg. Kim et al., RAMAN-SCATTERING STUDY ON THE EFFECTS OF GA ION-IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING FOR ALSB GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(4), 1993, pp. 2300-2305
Authors:
KIM SG
ASAHI H
SETA M
TAKIZAWA J
EMURA S
SONI RK
GONDA S
TANOUE H
Citation: Sg. Kim et al., RAMAN-SCATTERING STUDY OF THE RECOVERY PROCESS IN GA ION-IMPLANTED GASB, Journal of applied physics, 74(1), 1993, pp. 579-585