Authors: ASAHI H KIM SG SETA M ASAMI K WATANABE H OGURA T GONDA S

Citation: H. Asahi et al., OPTICAL-PROPERTIES OF ATOMIC LAYER GROWN INAS ALSB QUANTUM-WELL STRUCTURES BY GAS-SOURCE MIGRATION-ENHANCED EPITAXY/, Applied surface science, 82-3, 1994, pp. 109-114

Authors: KIM SG ASAHI H SETA M ASAMI K GONDA S YANO M INOUE M

Citation: Sg. Kim et al., OPTICAL-PROPERTIES OF INAS ALSB SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 310-314

Authors: SETA M ASAHI H KIM SG ASAMI K GONDA S

Citation: M. Seta et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY MIGRATION-ENHANCED EPITAXY GROWTH OF INAS ALSB SUPERLATTICES/, Journal of applied physics, 74(8), 1993, pp. 5033-5037

Authors: KIM SG ASAHI H SETA M EMURA S WATANABE H GONDA S TANOUE H

Citation: Sg. Kim et al., RAMAN-SCATTERING STUDY ON THE EFFECTS OF GA ION-IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING FOR ALSB GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(4), 1993, pp. 2300-2305

Authors: KIM SG ASAHI H SETA M TAKIZAWA J EMURA S SONI RK GONDA S TANOUE H

Citation: Sg. Kim et al., RAMAN-SCATTERING STUDY OF THE RECOVERY PROCESS IN GA ION-IMPLANTED GASB, Journal of applied physics, 74(1), 1993, pp. 579-585