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Results: 1-12 |
Results: 12
FORMATION OF DONOR CENTERS UPON ANNEALING OF DYSPROSIUM-IMPLANTED ANDHOLMIUM-IMPLANTED SILICON
Authors: ALEKSANDROV OV ZAKHARIN AO SOBOLEV NA SHEK EI MAKOVIICHUK MI PARSHIN EO
Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS UPON ANNEALING OF DYSPROSIUM-IMPLANTED ANDHOLMIUM-IMPLANTED SILICON, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 921-923
PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE
Authors: SOBOLEV NA GUSEV OB SHEK EI VDOVIN VI YUGOVA TG EMELYANOV AM
Citation: Na. Sobolev et al., PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE, Applied physics letters, 72(25), 1998, pp. 3326-3328
FORMATION OF DONOR CENTERS DURING ANNEALING OF ERBIUM-IMPLANTED SILICON
Authors: ALEKSANDROV OV SOBOLEV NA SHEK EI MERKULOV AV
Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS DURING ANNEALING OF ERBIUM-IMPLANTED SILICON, Semiconductors, 30(5), 1996, pp. 468-471
ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP PAK PE SOBOLEV NA SHEK EI YASSIEVICH IN MAKOVIICHUK MI PARSHIN EO
Citation: Ms. Bresler et al., ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON, Semiconductors, 30(5), 1996, pp. 479-482
CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT-TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES
Authors: SOBOLEV NA SHEK EI KURBAKOV AI RUBINOVA EE SOKOLOV AE
Citation: Na. Sobolev et al., CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT-TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES, Applied physics A: Materials science & processing, 62(3), 1996, pp. 259-262
FAR-INFRARED PHOTOCONDUCTIVITY OF SILICON IRRADIATED WITH FAST-NEUTRONS
Authors: GOLUBEV VG KROPOTOV GI PATSEKIN AV SOBOLEV NA SHEK EI DUKIN AA
Citation: Vg. Golubev et al., FAR-INFRARED PHOTOCONDUCTIVITY OF SILICON IRRADIATED WITH FAST-NEUTRONS, Semiconductors, 29(10), 1995, pp. 981-983
EFFECT OF EXCESS INTRINSIC POINT-DEFECTS ON ERBIUM DIFFUSION IN SILICON
Authors: ALEXANDROV OV SOBOLEV NA SHEK EI
Citation: Ov. Alexandrov et al., EFFECT OF EXCESS INTRINSIC POINT-DEFECTS ON ERBIUM DIFFUSION IN SILICON, Semiconductor science and technology, 10(7), 1995, pp. 948-951
NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES
Authors: NAIDENOV VO SOBOLEV NA ALEXANDROV OB BRESLER MS GUSEV OV GUSINSKII GM SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Vo. Naidenov et al., NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 587-589
DONOR CENTERS IN CZ-SI CONTAINING MAGNESIUM INTRODUCED BY NUCLEAR-TRANSMUTATION DOPING
Authors: EMTSEV VV POLOSKIN DS SOBOLEV NA SHEK EI
Citation: Vv. Emtsev et al., DONOR CENTERS IN CZ-SI CONTAINING MAGNESIUM INTRODUCED BY NUCLEAR-TRANSMUTATION DOPING, Semiconductors, 28(6), 1994, pp. 624-627
EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER
Authors: SOBOLEV NA BRESLER MS GUSEV OB SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Na. Sobolev et al., EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER, Semiconductors, 28(11), 1994, pp. 1100-1102
SHALLOW ACCEPTOR CENTERS FORMED DURING DIFFUSION OF ERBIUM IN SILICON
Authors: ALEKSANDROV OV EMTSEV VV POLOSKIN DS SOBOLEV NA SHEK EI
Citation: Ov. Aleksandrov et al., SHALLOW ACCEPTOR CENTERS FORMED DURING DIFFUSION OF ERBIUM IN SILICON, Semiconductors, 28(11), 1994, pp. 1126-1127
NEUTRON TRANSMUTATION DOPING OF SILICON BY MAGNESIUM
Authors: SOBOLEV NA SHEK EI SHABALIN EP
Citation: Na. Sobolev et al., NEUTRON TRANSMUTATION DOPING OF SILICON BY MAGNESIUM, Solid state communications, 88(5), 1993, pp. 369-371
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