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Authors: SHIAU GJ CHAO CP BURROWS PE FORREST SR

Citation: Gj. Shiau et al., GROWTH OF ABRUPT INGAAS(P) IN(GAAS)P HETEROINTERFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 77(1), 1995, pp. 201-209

Authors: GARBUZOV D SHIAU GJ BULOVIC V BORODITSKY M CHAO CP FORREST SR

Citation: D. Garbuzov et al., PHOTOLUMINESCENCE STUDY OF EXCESS CARRIER SPILLOVER IN 1.3-MU-M WAVELENGTH STRAINED MULTI-QUANTUM-WELL INGAASP INP LASER STRUCTURES/, Applied physics letters, 66(11), 1995, pp. 1307-1309

Authors: CHAO CP SHIAU GJ FORREST SR

Citation: Cp. Chao et al., 1.3-MU-M WAVELENGTH, INGAASP-INP FOLDED-CAVITY SURFACE-EMITTING LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 6(12), 1994, pp. 1406-1408

Authors: SHIAU GJ CHAO CP BURROWS PE FORREST SR

Citation: Gj. Shiau et al., LOW-THRESHOLD 1.3-MU-M WAVELENGTH, INGAASP STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(7), 1994, pp. 892-894