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Results:
1-7
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Results: 7
Authors:
TANII T
MATSUKAWA T
MORI S
KOH M
SHIGETA B
IGARASHI K
OHDOMARI I
Citation: T. Tanii et al., NONSCALABILITY OF ALPHA-PARTICLE-INDUCED CHARGE COLLECTION AREA, JPN J A P 2, 35(6A), 1996, pp. 688-690
Authors:
KOYAMA M
AKITA Y
CHEONG C
KOH M
MATSUKAWA T
HORITA K
SHIGETA B
OHDOMARI I
Citation: M. Koyama et al., QUANTITATIVE-ANALYSIS OF DEGRADATION IN SCHOTTKY DIODE CHARACTERISTICS INDUCED BY SINGLE-ION IMPLANTATION, Applied surface science, 104, 1996, pp. 253-256
Authors:
KOH M
HORITA K
SHIGETA B
MATSUKAWA T
KISHIDA A
TANII T
MORI S
OHDOMARI I
Citation: M. Koh et al., RADIATION IMMUNITY OF PMOSFETS AND NMOSFET EXAMINED BY MEANS OF MEV HE SINGLE-ION MICROPROBE, Applied surface science, 104, 1996, pp. 364-368
Authors:
KOH M
SHIGETA B
IGARASHI K
MATSUKAWA T
TANII T
MORI S
OHDOMARI I
Citation: M. Koh et al., QUANTITATIVE-ANALYSIS OF RADIATION-INDUCED SI SIO2 INTERFACE DEFECTS BY MEANS OF MEV HE SINGLE-ION IRRADIATION/, Applied physics letters, 68(11), 1996, pp. 1552-1554
Authors:
KOH M
HARA K
HORITA K
SHIGETA B
MATSUKAWA T
KISHIDA A
TANII T
GOTO M
OHDOMARI I
Citation: M. Koh et al., REVERSE-MODE SINGLE-ION BEAM-INDUCED CHARGE (R-MODE SIBIC) IMAGING FOR THE TEST OF TOTAL-DOSE EFFECTS IN N-CH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET), JPN J A P 2, 33(7A), 1994, pp. 120000962-120000965
Authors:
KOH M
HARA K
HORITA K
SHIGETA B
MATSUKAWA T
KISHIDA A
TANII T
GOTO M
OHDOMARI I
Citation: M. Koh et al., DEVELOPMENT OF THE SINGLE-ION BEAM-INDUCED CHARGE (SIBIC) IMAGING TECHNIQUE USING THE SINGLE-ION MICROPROBE SYSTEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 93(1), 1994, pp. 82-86
Authors:
MATSUKAWA T
KISHIDA A
TANII T
KOH M
HORITA K
HARA K
SHIGETA B
GOTO M
MATSUDA S
KUBOYAMA S
OHDOMARI I
Citation: T. Matsukawa et al., TOTAL-DOSE DEPENDENCE OF SOFT-ERROR HARDNESS IN 64KBIT SRAMS EVALUATED BY SINGLE-ION MICROPROBE TECHNIQUE, IEEE transactions on nuclear science, 41(6), 1994, pp. 2071-2076
Risultati:
1-7
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