Authors:
SHIM KH
MYOUNG J
GLUSCHENKOV O
KIM K
KIM C
ROBINSON IK
Citation: Kh. Shim et al., EVOLUTION OF SURFACE-MORPHOLOGY AND STRAIN IN LOW-TEMPERATURE ALN GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, JPN J A P 2, 37(3B), 1998, pp. 313-315
Citation: Kh. Shim et Jt. Lim, A FEEDFORWARD-PLUS-FEEDBACK CONGESTION CONTROL SCHEME FOR STORE-AND-FORWARD PACKET-SWITCHING NETWORKS, International Journal of Systems Science, 29(2), 1998, pp. 103-110
Citation: Kh. Shim et Jt. Lim, PERFORMANCE ANALYSIS AND DESIGN OF TOKEN-PASSING NETWORKS WITH 2 MESSAGE PRIORITIES, IEE proceedings. Communications, 144(1), 1997, pp. 11-16
Citation: Kh. Shim et al., A LINK-DISJOINT SUBMESH FOR PROCESSOR ALLOCATION IN MESH COMPUTERS, IEICE transactions on information and systems, E80D(12), 1997, pp. 1155-1165
Authors:
MYOUNG JM
SHIM KH
GLUSCHENKOV O
KIM C
KIM K
KIM S
BISHOP SG
Citation: Jm. Myoung et al., EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF P-TYPE GAN GROWN BYPLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 182(3-4), 1997, pp. 241-246
Authors:
GLUSCHENKOV O
MYOUNG JM
SHIM KH
KIM K
FIGEN ZG
GAO J
EDEN JG
Citation: O. Gluschenkov et al., STIMULATED-EMISSION AT 300-K FROM PHOTOPUMPED GAN GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY WITH AN INDUCTIVELY-COUPLED PLASMA SOURCE, Applied physics letters, 70(7), 1997, pp. 811-813
Citation: Kh. Shim et al., COMPOSITION DEPENDENCE OF THE BOND LENGTHS IN THE QUATERNARY SEMICONDUCTING ALLOY (A(1-X)B(X)C(1-Y)D(Y)), Solid state communications, 98(9), 1996, pp. 825-828
Citation: Kh. Shim et Jt. Lim, EXTREME-POINT ROBUST STABILITY OF A CLASS OF DISCRETE-TIME POLYNOMIALS, Electronics Letters, 32(15), 1996, pp. 1421-1422
Authors:
MYOUNG JM
SHIM KH
KIM C
GLUSCHENKOV O
KIM K
KIM S
TURNBULL DA
BISHOP SG
Citation: Jm. Myoung et al., OPTICAL CHARACTERISTICS OF P-TYPE GAN FILMS GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(18), 1996, pp. 2722-2724
Citation: K. Kim et al., GROWTH AND CHARACTERIZATION OF GAN ON SAPPHIRE (0001) USING PLASMA-ASSISTED IONIZED SOURCE BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 796-799
Citation: Mc. Yoo et al., EPITAXIAL-GROWTH OF GAN ON SI (100) SAPPHIRE (0001) USING RF PLASMA-ASSISTED IONIZED SOURCE BEAM EPITAXY, Optical and quantum electronics, 27(5), 1995, pp. 427-434
Authors:
OTSUKA AJ
FRANCO R
YANG B
SHIM KH
TANG LZ
ZHANG YY
BOONTRAKULPOONTAWEE P
JEYAPRAKASH A
HEDGECOCK E
WHEATON VI
SOBERY A
Citation: Aj. Otsuka et al., AN ANKYRIN-RELATED GENE (UNC-44) IS NECESSARY FOR PROPER AXONAL GUIDANCE IN CAENORHABDITIS-ELEGANS, The Journal of cell biology, 129(4), 1995, pp. 1081-1092
Citation: Jt. Lim et Kh. Shim, ASYMPTOTIC PERFORMANCE EVALUATION OF TOKEN-PASSING NETWORKS, IEEE transactions on industrial electronics, 40(3), 1993, pp. 384-385