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Results:
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Results: 19
Authors:
RADZIMSKI ZJ
POSADOWSKI WM
ROSSNAGEL SM
SHINGUBARA S
Citation: Zj. Radzimski et al., DIRECTIONAL COPPER DEPOSITION USING DC MAGNETRON SELF-SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1102-1106
Authors:
NARAYANAN V
SUKIDI N
HU CM
DIETZ N
BACHMANN KJ
MAHAJAN S
SHINGUBARA S
Citation: V. Narayanan et al., GROWTH OF GALLIUM-PHOSPHIDE LAYERS BY CHEMICAL BEAM EPITAXY ON OXIDE PATTERNED (001)SILICON SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 207-209
Authors:
FURUKAWA M
SHINGUBARA S
HORIIKE Y
Citation: M. Furukawa et al., A MODEL FOR RESOLUTION DEPENDENT ROUGHNESS VALUES MEASURED BY AN OPTICAL PROFILER FOR SPECIFIC SURFACES, JPN J A P 1, 36(6A), 1997, pp. 3750-3754
Authors:
SAKAUE H
KOJIMA A
OSADA N
SHINGUBARA S
TAKAHAGI T
Citation: H. Sakaue et al., HIGHLY SELECTIVE SIO2 ETCHING USING CF4 C2H4, JPN J A P 1, 36(4B), 1997, pp. 2477-2481
Authors:
SAKAUE H
TAKAHASHI E
TANAKA T
SHINGUBARA S
TAKAHAGI T
Citation: H. Sakaue et al., SCANNING-TUNNELING-MICROSCOPY OBSERVATION ON THE ATOMIC STRUCTURES OFSTEP EDGES AND ETCH PITS ON A NH4F-TREATED SI(111) SURFACE, JPN J A P 1, 36(3B), 1997, pp. 1420-1423
Authors:
ICHIKI T
KIKUCHI T
SANO A
SHINGUBARA S
HORIIKE Y
Citation: T. Ichiki et al., GAP-FILLING OF CU EMPLOYING SUSTAINED SELF-SPUTTERING WITH INDUCTIVELY-COUPLED PLASMA IONIZATION, JPN J A P 1, 36(3B), 1997, pp. 1469-1472
Authors:
SHINGUBARA S
OKINO O
SAYAMA Y
SAKAUE H
TAKAHAGI T
Citation: S. Shingubara et al., ORDERED 2-DIMENSIONAL NANOWIRE ARRAY FORMATION USING SELF-ORGANIZED NANOHOLES OF ANODICALLY OXIDIZED ALUMINUM, JPN J A P 1, 36(12B), 1997, pp. 7791-7795
Authors:
RADZIMSKI ZJ
HANKINS OE
CUOMO JJ
POSADOWSKI WP
SHINGUBARA S
Citation: Zj. Radzimski et al., OPTICAL-EMISSION SPECTROSCOPY OF HIGH-DENSITY METAL PLASMA FORMED DURING MAGNETRON SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 202-208
Authors:
SAKAUE H
KATSUDA Y
KONAGATA S
SHINGUBARA S
TAKAHAGI T
Citation: H. Sakaue et al., ALUMINUM-SELECTIVE CHEMICAL-VAPOR-DEPOSITION INDUCED BY HYDROGEN DESORPTION ON SILICON, JPN J A P 1, 35(2B), 1996, pp. 1010-1013
Authors:
SUKESAKO H
KAWASAKI T
SAKAUE H
SHINGUBARA S
TAKAHAGI T
HORIIKE Y
Citation: H. Sukesako et al., FABRICATION OF A SI NANOMETER COLUMN PN JUNCTION AND IMPLANTED DEFECTEVALUATION BY TRANSMISSION ELECTRON-MICROSCOPY, JPN J A P 1, 35(2B), 1996, pp. 1045-1048
Authors:
KOBAYASHI Y
CHINZEI Y
ASANOME H
KUROSAKI R
KIKUCHI J
SHINGUBARA S
HORIIKE Y
Citation: Y. Kobayashi et al., HIGH-RATE BIAS SPUTTERING FILLING OF SIO2 FILM EMPLOYING BOTH CONTINUOUS-WAVE AND TIME-MODULATED INDUCTIVELY-COUPLED PLASMAS, JPN J A P 1, 35(2B), 1996, pp. 1474-1477
Authors:
TAKAHAGI T
SHINGUBARA S
SAKAUE H
HOSHINO K
YASHIMA H
Citation: T. Takahagi et al., STUDY ON ADSORPTION BEHAVIOR OF ORGANIC CONTAMINATIONS ON SILICON SURFACE BY GAS-CHROMATOGRAPHY MASS-SPECTROMETRY, JPN J A P 2, 35(7A), 1996, pp. 818-821
Authors:
FURUKAWA M
YAMAMOTO Y
IKAKURA H
TANAKA N
HASHIMOTO M
SANO A
SHINGUBARA S
Citation: M. Furukawa et al., SURFACE MORPHOLOGIES OF SPUTTER-DEPOSITED ALUMINUM FILMS STUDIED USING A HIGH-RESOLUTION PHASE-MEASURING LASER INTERFEROMETRIC MICROSCOPE, Applied optics, 35(4), 1996, pp. 701-707
Authors:
SHINGUBARA S
UTSUNOMIYA I
FUJII T
Citation: S. Shingubara et al., MOLECULAR-DYNAMICS SIMULATION OF VOID ELECTROMIGRATION UNDER A HIGH-DENSITY ELECTRIC-CURRENT STRESS IN AN ALUMINUM INTERCONNECTION, Electronics & communications in Japan. Part 2, Electronics, 78(12), 1995, pp. 82-95
Authors:
KUBOTA K
MATSUMOTO H
SHINDO H
SHINGUBARA S
HORIIKE Y
Citation: K. Kubota et al., MEASUREMENT OF FLUOROCARBON RADICALS GENERATED FROM C4F8 H-2 INDUCTIVELY-COUPLED PLASMA - STUDY ON SIO2 SELECTIVE ETCHING KINETICS/, JPN J A P 1, 34(4B), 1995, pp. 2119-2124
Authors:
SHINGUBARA S
FUJIKI K
SANO A
INOUE K
SAKAUE H
SAITOH M
HORIIKE Y
Citation: S. Shingubara et al., RESISTANCE OSCILLATIONS INDUCED BY DIRECT-CURRENT ELECTROMIGRATION, JPN J A P 1, 34(2B), 1995, pp. 1030-1036
Authors:
SHINGUBARA S
UTSUNOMIYA I
TAKAHAGI T
Citation: S. Shingubara et al., INTERACTION OF A VOID AND A GRAIN-BOUNDARY UNDER A HIGH ELECTRIC-CURRENT STRESS EMPLOYING 3-DIMENSIONAL MOLECULAR-DYNAMICS SIMULATION, Applied surface science, 91(1-4), 1995, pp. 220-226
Authors:
SHINGUBARA S
NISHIDA H
SAKAUE H
HORIIKE Y
Citation: S. Shingubara et al., ELECTROMIGRATION CHARACTERISTICS OF CU-AL PRECIPITATE IN ALCU INTERCONNECTION, JPN J A P 1, 33(7A), 1994, pp. 3860-3863
Authors:
SHINGUBARA S
MORIMOTO N
TAKEHIRO S
MATSUI Y
UTSUNOMIYA I
HORIIKE Y
SHINDO H
Citation: S. Shingubara et al., VERTICAL AND LATERAL HOLE ALUMINUM FILLING CHARACTERISTICS EMPLOYING ELECTRON-CYCLOTRON-RESONANCE PLASMA SPUTTERING WITH HIGH MAGNETIC-FIELD, Applied physics letters, 63(6), 1993, pp. 737-739
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