Authors:
NIWANO M
TERASHI M
SHINOHARA M
SHOJI D
MIYAMOTO N
Citation: M. Niwano et al., OXIDATION PROCESSES ON THE H2O CHEMISORBED SI(100) SURFACE STUDIED BYIN-SITU INFRARED-SPECTROSCOPY, Surface science, 401(3), 1998, pp. 364-370
Citation: D. Shoji et al., LOW-TEMPERATURE EPITAXIAL-GROWTH OF CAF2 ON (NH4)(2)S-X-TREATED GAAS(100) SURFACE, Applied surface science, 117, 1997, pp. 443-446
Authors:
NIWANO M
SAWAHATA J
MIURA T
SHOJI D
MIYAMOTO N
Citation: M. Niwano et al., SYNCHROTRON-RADIATION-INDUCED REACTIONS OF CONDENSED LAYER OF ORGANOSILICON COMPOUNDS, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 89-92
Authors:
ENTA Y
TAKEGAWA Y
SHOJI D
SUEMITSU M
TAKAKUWA Y
KATO H
MIYAMOTO N
Citation: Y. Enta et al., BAND-DISPERSION-ORIGINATED PHOTOELECTRON INTENSITY OSCILLATIONS DURING SI EPITAXIAL-GROWTH ON SI(100), Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 173-176
Citation: T. Miura et al., INITIAL-STAGES OF OXIDATION OF HYDROGEN-TERMINATED SI SURFACE STORED IN AIR, Applied surface science, 101, 1996, pp. 454-459
Citation: T. Miura et al., KINETICS OF OXIDATION ON HYDROGEN-TERMINATED SI(100) AND SI(111) SURFACES STORED IN AIR, Journal of applied physics, 79(8), 1996, pp. 4373-4380