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Results: 1-13 |
Results: 13
EFFECTIVE EXPONENT FOR THE SIZE DEPENDENCE OF LUMINESCENCE IN SEMICONDUCTOR NANOCRYSTALLITES
Authors: RANJAN V SINGH VA JOHN GC
Citation: V. Ranjan et al., EFFECTIVE EXPONENT FOR THE SIZE DEPENDENCE OF LUMINESCENCE IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review. B, Condensed matter, 58(3), 1998, pp. 1158-1161
UNIFIED MODEL FOR THE LUMINESCENCE AND TRANSPORT DATA IN SELF-SUPPORTING POROUS SILICON
Authors: MEHRA RM AGARWAL V SINGH VA MATHUR PC
Citation: Rm. Mehra et al., UNIFIED MODEL FOR THE LUMINESCENCE AND TRANSPORT DATA IN SELF-SUPPORTING POROUS SILICON, Journal of applied physics, 83(4), 1998, pp. 2235-2240
SIMPLE SCHEME FOR THE NUMERICAL EVALUATION OF NEARLY SINGULAR-INTEGRALS
Authors: JOHN GC HASBUN JE SINGH VA
Citation: Gc. John et al., SIMPLE SCHEME FOR THE NUMERICAL EVALUATION OF NEARLY SINGULAR-INTEGRALS, Computers in physics, 11(3), 1997, pp. 293-298
SELF-ORGANIZATION IN POROUS SILICON FORMATION
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, SELF-ORGANIZATION IN POROUS SILICON FORMATION, Physical review. B, Condensed matter, 56(8), 1997, pp. 4638-4641
2-SCALE MODEL FOR AGGREGATION AND ETCHING
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, 2-SCALE MODEL FOR AGGREGATION AND ETCHING, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 53(4), 1996, pp. 3920-3924
MODEL FOR THE PHOTOLUMINESCENCE BEHAVIOR OF POROUS SILICON
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, MODEL FOR THE PHOTOLUMINESCENCE BEHAVIOR OF POROUS SILICON, Physical review. B, Condensed matter, 54(7), 1996, pp. 4416-4419
VIBRATIONAL-SPECTRA OF DEFECTS IN SILICON - AN ORBITAL RADII APPROACH
Authors: VERMA HC JOHN GC SINGH VA
Citation: Hc. Verma et al., VIBRATIONAL-SPECTRA OF DEFECTS IN SILICON - AN ORBITAL RADII APPROACH, Physical review. B, Condensed matter, 53(15), 1996, pp. 9831-9837
POROUS SILICON - THEORETICAL-STUDIES
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, POROUS SILICON - THEORETICAL-STUDIES, Physics reports, 263(2), 1995, pp. 94-151
DIFFUSION-INDUCED NUCLEATION MODEL FOR THE FORMATION OF POROUS SILICON
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, DIFFUSION-INDUCED NUCLEATION MODEL FOR THE FORMATION OF POROUS SILICON, Physical review. B, Condensed matter, 52(15), 1995, pp. 11125-11131
MONTE-CARLO EVALUATION OF THE AHARONOV-BOHM EFFECT
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, MONTE-CARLO EVALUATION OF THE AHARONOV-BOHM EFFECT, International journal of modern physics C, 6(1), 1995, pp. 67-76
TEMPERATURE-TIME DUALITY AND DEEP-LEVEL SPECTROSCOPIES
Authors: AGARWAL S MOHAPATRA YN SINGH VA
Citation: S. Agarwal et al., TEMPERATURE-TIME DUALITY AND DEEP-LEVEL SPECTROSCOPIES, Journal of applied physics, 77(7), 1995, pp. 3155-3161
TIME ANALYZED TRANSIENT SPECTROSCOPY AND MULTIPLE DX RELATED EMISSIONCENTERS IN SILICON DOPED ALXGA1-XAS
Authors: AGARWAL S MOHAPATRA YN SINGH VA SHARAN R
Citation: S. Agarwal et al., TIME ANALYZED TRANSIENT SPECTROSCOPY AND MULTIPLE DX RELATED EMISSIONCENTERS IN SILICON DOPED ALXGA1-XAS, Journal of applied physics, 77(11), 1995, pp. 5725-5729
THEORY OF THE PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON
Authors: JOHN GC SINGH VA
Citation: Gc. John et Va. Singh, THEORY OF THE PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON, Physical review. B, Condensed matter, 50(8), 1994, pp. 5329-5334
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