Authors: SZELAG B SKOTNICKI T BALESTRA F

Citation: B. Szelag et al., CRYOGENIC OPERATION OF HEAVY-ION IMPLANTED N-CHANNEL AND P-CHANNEL MOSFET, Journal de physique. IV, 8(P3), 1998, pp. 37-40

Authors: ALIEU J SOUIFI A BREMOND G BOUILLON P SKOTNICKI T

Citation: J. Alieu et al., ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1675-1678

Authors: BOUILLON P SKOTNICKI T

Citation: P. Bouillon et T. Skotnicki, THEORETICAL-ANALYSIS OF KINK EFFECT IN C-V CHARACTERISTICS OF INDIUM-IMPLANTED NMOS CAPACITORS, IEEE electron device letters, 19(1), 1998, pp. 19-22

Authors: BODNAR S DEBERRANGER E BOUILLON P MOUIS M SKOTNICKI T REGOLINI JL

Citation: S. Bodnar et al., SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 712-718

Authors: BOUTCHACHA T GHIBAUDO G GUEGAN G SKOTNICKI T

Citation: T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18-MU-M SI CMOS TRANSISTORS, Microelectronics and reliability, 37(10-11), 1997, pp. 1599-1602