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Results: 1-15 |
Results: 15
PROCESSES OF QUANTUM-DOT FORMATION IN THE INAS ON GAAS(001) SYSTEM - A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY
Authors: WESTWOOD DI SOBIESIERSKI Z MATTHAI CC STEIMETZ E ZETTLER T RICHTER W
Citation: Di. Westwood et al., PROCESSES OF QUANTUM-DOT FORMATION IN THE INAS ON GAAS(001) SYSTEM - A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2358-2366
ASPECTS OF REFLECTANCE ANISOTROPY SPECTROSCOPY FROM SEMICONDUCTOR SURFACES
Authors: SOBIESIERSKI Z WESTWOOD DI MATTHAI CC
Citation: Z. Sobiesierski et al., ASPECTS OF REFLECTANCE ANISOTROPY SPECTROSCOPY FROM SEMICONDUCTOR SURFACES, Journal of physics. Condensed matter, 10(1), 1998, pp. 1-43
SURFACE-STRUCTURE OF INP(001) UNDER DYNAMIC AND STATIC CONDITIONS OF MOLECULAR-BEAM EPITAXY
Authors: PARBROOK PJ OZANYAN KB HOPKINSON M WHITEHOUSE CR SOBIESIERSKI Z WESTWOOD DI
Citation: Pj. Parbrook et al., SURFACE-STRUCTURE OF INP(001) UNDER DYNAMIC AND STATIC CONDITIONS OF MOLECULAR-BEAM EPITAXY, Applied surface science, 123, 1998, pp. 313-318
ON THE DEVELOPMENT OF INAS ON GAAS(001) AS MEASURED BY REFLECTANCE ANISOTROPY SPECTROSCOPY - CONTINUOUS AND ISLANDED FILMS
Authors: WESTWOOD DI SOBIESIERSKI Z STEIMETZ E ZETTLER T RICHTER W
Citation: Di. Westwood et al., ON THE DEVELOPMENT OF INAS ON GAAS(001) AS MEASURED BY REFLECTANCE ANISOTROPY SPECTROSCOPY - CONTINUOUS AND ISLANDED FILMS, Applied surface science, 123, 1998, pp. 347-351
REFLECTANCE ANISOTROPY SPECTROSCOPY AND THE GROWTH OF LOW-DIMENSIONALMATERIALS
Authors: SOBIESIERSKI Z WESTWOOD DI
Citation: Z. Sobiesierski et Di. Westwood, REFLECTANCE ANISOTROPY SPECTROSCOPY AND THE GROWTH OF LOW-DIMENSIONALMATERIALS, Thin solid films, 318(1-2), 1998, pp. 140-147
OPTICAL MONITORING OF INP MONOLAYER GROWTH-RATES
Authors: PARBROOK PJ OZANYAN KB HOPKINSON M WHITEHOUSE CR SOBIESIERSKI Z WESTWOOD DI
Citation: Pj. Parbrook et al., OPTICAL MONITORING OF INP MONOLAYER GROWTH-RATES, Applied physics letters, 73(3), 1998, pp. 345-347
REFLECTANCE ANISOTROPY SPECTRA FROM SI DELTA-DOPED GAAS(001) - CORRELATION OF LINEAR ELECTROOPTIC EFFECT WITH INTEGRATED SURFACE FIELD
Authors: SOBIESIERSKI Z WESTWOOD DI ELLIOTT M
Citation: Z. Sobiesierski et al., REFLECTANCE ANISOTROPY SPECTRA FROM SI DELTA-DOPED GAAS(001) - CORRELATION OF LINEAR ELECTROOPTIC EFFECT WITH INTEGRATED SURFACE FIELD, Physical review. B, Condensed matter, 56(23), 1997, pp. 15277-15281
IN-SITU MONITORING OF THE SURFACE RECONSTRUCTIONS ON INP(001) PREPARED BY MOLECULAR-BEAM EPITAXY
Authors: OZANYAN KB PARBROOK PJ HOPKINSON M WHITEHOUSE CR SOBIESIERSKI Z WESTWOOD DI
Citation: Kb. Ozanyan et al., IN-SITU MONITORING OF THE SURFACE RECONSTRUCTIONS ON INP(001) PREPARED BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(1), 1997, pp. 474-476
AS P EXCHANGE ON INP(001) STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY/
Authors: SOBIESIERSKI Z WESTWOOD DI PARBROOK PJ OZANYAN KB HOPKINSON M WHITEHOUSE CR
Citation: Z. Sobiesierski et al., AS P EXCHANGE ON INP(001) STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY/, Applied physics letters, 70(11), 1997, pp. 1423-1425
OPTICAL MONITORING OF THE DEVELOPMENT OF INAS QUANTUM DOTS ON GAAS(001) BY REFLECTANCE ANISOTROPY SPECTROSCOPY
Authors: STEIMETZ E ZETTLER JT RICHTER W WESTWOOD DI WOOLF DA SOBIESIERSKI Z
Citation: E. Steimetz et al., OPTICAL MONITORING OF THE DEVELOPMENT OF INAS QUANTUM DOTS ON GAAS(001) BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3058-3064
REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF GAAS OVERLAYER GROWTH ONSUBMONOLAYER COVERAGES OF SI ON THE GAAS(001)-C(4X4) SURFACE
Authors: SOBIESIERSKI Z WESTWOOD DI WOOLF DA
Citation: Z. Sobiesierski et al., REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF GAAS OVERLAYER GROWTH ONSUBMONOLAYER COVERAGES OF SI ON THE GAAS(001)-C(4X4) SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3065-3069
GROWTH OPTIMIZATION OF N-TYPE GAAS ON GAAS(201) SUBSTRATES
Authors: WILLIAMS JP WESTWOOD DI SOBIESIERSKI Z AUBREY JE
Citation: Jp. Williams et al., GROWTH OPTIMIZATION OF N-TYPE GAAS ON GAAS(201) SUBSTRATES, Journal of applied physics, 76(1), 1994, pp. 612-614
PHOTOLUMINESCENCE SPECTROSCOPY OF NEAR-SURFACE QUANTUM-WELLS - ELECTRONIC COUPLING BETWEEN QUANTIZED ENERGY-LEVELS AND THE SAMPLE SURFACE
Authors: SOBIESIERSKI Z WESTWOOD DI WOOLF DA FUKUI T HASEGAWA H
Citation: Z. Sobiesierski et al., PHOTOLUMINESCENCE SPECTROSCOPY OF NEAR-SURFACE QUANTUM-WELLS - ELECTRONIC COUPLING BETWEEN QUANTIZED ENERGY-LEVELS AND THE SAMPLE SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1723-1726
THE HOMOEPITAXIAL GROWTH OF ON-AXIS GAAS(111)A, (111)B AND (201) COMPARED WITH GAAS(100) - DOPING AND GROWTH TEMPERATURE STUDIES
Authors: WOOLF DA WILLIAMS JP WESTWOOD DI SOBIESIERSKI Z AUBREY JE WILLIAMS RH
Citation: Da. Woolf et al., THE HOMOEPITAXIAL GROWTH OF ON-AXIS GAAS(111)A, (111)B AND (201) COMPARED WITH GAAS(100) - DOPING AND GROWTH TEMPERATURE STUDIES, Journal of crystal growth, 127(1-4), 1993, pp. 913-917
EVIDENCE FOR HYDROGEN ACCUMULATION AT STRAINED-LAYER HETEROJUNCTIONS
Authors: SOBIESIERSKI Z CLEGG JB
Citation: Z. Sobiesierski et Jb. Clegg, EVIDENCE FOR HYDROGEN ACCUMULATION AT STRAINED-LAYER HETEROJUNCTIONS, Applied physics letters, 63(7), 1993, pp. 926-928
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