Citation: U. Reichard et V. Sommer, GROUP ENCOUNTERS IN WILD GIBBONS (HYLOBATES LAR) - AGONISM, AFFILIATION, AND THE CONCEPT OF INFANTICIDE, Behaviour, 134, 1997, pp. 1135-1174
Authors:
SOMMER V
TOBIAS P
KOHL D
SUNDGREN H
LUNDSTROM I
Citation: V. Sommer et al., NEURAL NETWORKS AND ABDUCTIVE NETWORKS FOR CHEMICAL SENSOR SIGNALS - A CASE COMPARISON, Sensors and actuators. B, Chemical, 28(3), 1995, pp. 217-222
Citation: V. Sommer et D. Mendozagranados, PLAY AS INDICATOR OF HABITAT QUALITY - A FIELD-STUDY OF LANGUR MONKEYS (PRESBYTIS-ENTELLUS), Ethology, 99(3), 1995, pp. 177-192
Authors:
HOVEL R
STEIMETZ E
MANNHEIM S
SOMMER V
WOITOK J
FINDERS J
HEIME K
Citation: R. Hovel et al., THE N-TYPE DOPING OF GAAS ALXGA1-XAS AND GROWTH OF 2-DIMENSIONAL ELECTRON-GAS STRUCTURES WITH DEALH-NME(3) AS AL SOURCE/, Journal of crystal growth, 146(1-4), 1995, pp. 515-520
Citation: V. Sommer, A NEW METHOD TO DETERMINE THE SOURCE RESISTANCE OF FET FROM MEASURED S-PARAMETERS UNDER ACTIVE-BIAS CONDITIONS, IEEE transactions on microwave theory and techniques, 43(3), 1995, pp. 504-510
Citation: Ls. Rajpurohit et al., WANDERERS BETWEEN HAREMS AND BACHELOR BANDS - MALE HANUMAN LANGURS (PRESBYTIS-ENTELLUS) AT JODHPUR IN RAJASTHAN, Behaviour, 132, 1995, pp. 255-299
Citation: C. Borries et al., WEAVING A TIGHT SOCIAL NET - ALLOGROOMING IN FREE-RANGING FEMALE LANGURS (PRESBYTIS-ENTELLUS), International journal of primatology, 15(3), 1994, pp. 421-443
Citation: V. Sommer et al., METHANE AND BUTANE CONCENTRATIONS IN A MIXTURE WITH AIR DETERMINED BYMICROCALORIMETRIC SENSORS AND NEURAL NETWORKS, Sensors and actuators. B, Chemical, 12(2), 1993, pp. 147-152
Authors:
KUSTERS AM
KOHL A
SOMMER V
MULLER R
HEIME K
Citation: Am. Kusters et al., OPTIMIZED DOUBLE-HETEROJUNCTION PSEUDOMORPHIC INP INXGA1-XAS/INP(0.64-LESS-THAN-X-LESS-THAN-0.82) P-MODFETS AND THE ROLE OF STRAIN IN THEIRDESIGN/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2164-2170
Authors:
KUSTERS AM
FUNKE T
SOMMER V
WULLER R
BRITTNER S
KOHL A
HEIME K
Citation: Am. Kusters et al., 0.5 MU-M GATE LENGTH INP IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE/, Electronics Letters, 29(10), 1993, pp. 841-842