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Results:
1-15
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Results: 15
Authors:
SON CS
PARK YK
KIM SI
KIM Y
KIM EK
MIN SK
CHOI IH
Citation: Cs. Son et al., MASKLESS SELECTIVE EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(4A), 1998, pp. 1701-1703
SELECTIVE EPITAXY OF CARBON-TETRACHLORIDE-DOPED GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors:
PARK YK
KIM SI
KIM Y
KIM EK
MIN SK
SON CS
CHOI IH
Citation: Yk. Park et al., SELECTIVE EPITAXY OF CARBON-TETRACHLORIDE-DOPED GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of the Korean Physical Society, 32(5), 1998, pp. 704-706
Authors:
PARK YK
SON CS
KIM SI
KIM Y
KIM EK
MIN SK
CHOI IH
Citation: Yk. Park et al., EFFECT OF ATOMIC BOND STRUCTURE ON CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF CARBON DOPING IN GAAS, Journal of applied physics, 83(5), 1998, pp. 2519-2523
Authors:
KIM TG
SON CS
HWANG SM
KIM EK
MIN SK
LEEM SJ
PARK JH
Citation: Tg. Kim et al., FABRICATION OF GAAS ALGAAS BURIED-CHANNEL STRIPE LASERS BY SINGLE-STAGE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Electronics Letters, 34(1), 1998, pp. 85-87
Authors:
SON CS
KIM SI
KIM TG
KIM Y
CHO SH
PARK YK
KIM EK
MIN SK
CHOI IH
Citation: Cs. Son et al., ELECTRICAL-PROPERTIES OF RAPID THERMAL ANNEALED CARBON-DOPED INGAAS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of the Korean Physical Society, 30(2), 1997, pp. 244-247
Authors:
KIM SI
SON CS
CHUNG SW
PARK YK
KIM EE
MIN SK
Citation: Si. Kim et al., TEMPERATURE-DEPENDENT HALL ANALYSIS OF CARBON-DOPED GAAS, Thin solid films, 310(1-2), 1997, pp. 63-66
Authors:
KIM SI
KIM MS
KIM Y
HWANG SM
MIN BD
SON CS
KIM EK
MIN SK
Citation: Si. Kim et al., LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED SUBSTRATES BY CCL4 AND CBR4 DURING MOCVD, Journal of crystal growth, 170(1-4), 1997, pp. 665-668
Authors:
SON CS
KIM SI
KIM Y
PARK YK
KIM EK
MIN SK
CHOI IH
Citation: Cs. Son et al., DEPENDENCE OF CARBON INCORPORATION ON CRYSTALLOGRAPHIC ORIENTATION OFGAAS AND ALGAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USINGCBR4, Journal of applied physics, 82(3), 1997, pp. 1205-1207
Authors:
SON CS
KIM SI
MIN BD
KIM Y
KIM EK
MIN SK
CHOI IH
Citation: Cs. Son et al., ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED GAAS EPILAYERS GROWN BYATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CBR4, JPN J A P 1, 35(12B), 1996, pp. 6562-6565
Authors:
KIM TG
PARK JH
KIM Y
KIM SI
SON CS
KIM MS
KIM EK
MIN SK
Citation: Tg. Kim et al., EFFECTIVE CARRIER CONFINEMENT OF A SHORT-PERIOD GAAS ALGAAS QUANTUM-WIRE ARRAY/, Semiconductor science and technology, 11(8), 1996, pp. 1214-1217
Authors:
SON CS
KIM SI
KIM TG
KIM Y
KIM MS
MIN SK
Citation: Cs. Son et al., EFFECTS OF RAPID THERMAL ANNEALING ON THE ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED INGAAS, Solid state communications, 98(5), 1996, pp. 475-478
Authors:
SON CS
KIM SI
KIM Y
LEE MS
KIM MS
MIN SK
CHOI IH
Citation: Cs. Son et al., PROPERTIES OF CARBON-DOPED INGAAS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4, Journal of crystal growth, 165(3), 1996, pp. 222-226
Authors:
KIM SI
KIM MS
KIM Y
SON CS
HWANG SM
MIN BD
KIM EK
MIN SK
Citation: Si. Kim et al., CONTROL OF GAAS LATERAL GROWTH-RATE BY CBR4 DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED SUBSTRATES, Applied physics letters, 69(6), 1996, pp. 815-817
Authors:
KIM SI
SON CS
LEE MS
KIM Y
KIM MS
MIN SK
Citation: Si. Kim et al., TEMPERATURE-DEPENDENT ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Solid state communications, 93(11), 1995, pp. 939-942
Authors:
KANG JM
SON CS
KIM MS
KIM Y
MIN SK
KIM CS
Citation: Jm. Kang et al., ORIGIN OF CRYSTALLOGRAPHIC TILT IN INGAAS GAAS(001) HETEROSTRUCTURE/, Applied physics letters, 67(5), 1995, pp. 641-643
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1-15
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