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Results: 1-25/40
Authors:
SPINELLA C
Citation: C. Spinella, NEW 2-DIMENSIONAL DOPANT DELINEATION TECHNIQUES FOR SUBMICRON, DEVICECHARACTERIZATION, Solid-state electronics, 42(5), 1998, pp. 55-64
Authors:
SPINELLA C
LOMBARDO S
PRIOLO F
Citation: C. Spinella et al., CRYSTAL GRAIN NUCLEATION IN AMORPHOUS-SILICON, Journal of applied physics, 84(10), 1998, pp. 5383-5414
Authors:
LOMBARDO S
CRUPI F
LAMAGNA A
SPINELLA C
TERRASI A
LAMANTIA A
NERI B
Citation: S. Lombardo et al., ELECTRICAL AND THERMAL TRANSIENT DURING DIELECTRIC-BREAKDOWN OF THIN OXIDES IN METAL-SIO2-SILICON CAPACITORS, Journal of applied physics, 84(1), 1998, pp. 472-479
Authors:
FRANZO G
COFFA S
PRIOLO F
SPINELLA C
Citation: G. Franzo et al., MECHANISM AND PERFORMANCE OF FORWARD AND REVERSE BIAS ELECTROLUMINESCENCE AT 1.54 MU-M FROM ER-DOPED SI DIODES, Journal of applied physics, 81(6), 1997, pp. 2784-2793
Authors:
PRIVITERA V
PRIOLO F
MANNINO G
CAMPISANO SU
CARNERA A
ARENA G
SPINELLA C
Citation: V. Privitera et al., THE EFFECT OF REACTIVE PLASMA-ETCHING ON THE TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Applied physics letters, 71(13), 1997, pp. 1834-1836
Authors:
SPINELLA C
RAINERI V
LAVIA F
CAMPISANO SU
Citation: C. Spinella et al., 2-DIMENSIONAL JUNCTION PROFILING BY SELECTIVE CHEMICAL ETCHING - APPLICATIONS TO ELECTRON DEVICE CHARACTERIZATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 414-420
EFFECT OF OXYGEN ON THE GROWTH OF EPITAXIAL ERSI2-X FILMS ON SI BY THE REACTIVE DEPOSITION TECHNIQUE
Authors:
GRIMALDI MG
RAVESI S
SPINELLA C
YAN XS
Citation: Mg. Grimaldi et al., EFFECT OF OXYGEN ON THE GROWTH OF EPITAXIAL ERSI2-X FILMS ON SI BY THE REACTIVE DEPOSITION TECHNIQUE, Applied surface science, 102, 1996, pp. 138-141
Authors:
COFFA S
FRANZO G
PRIOLO F
LIBERTINO S
MOSCA R
GOMBIA E
SPINELLA C
Citation: S. Coffa et al., ION-IMPLANTATION DOPING OF SI FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 74-80
Authors:
SPINELLA C
PRIOLO F
PUGLISI RA
LOMBARDO S
CAMPISANO SU
Citation: C. Spinella et al., NUCLEAR-ENERGY AND CASCADE EFFECTS ON THE ION-ASSISTED CRYSTAL NUCLEATION IN AMORPHOUS-SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 198-202
Authors:
LARSEN KK
PRIVITERA V
COFFA S
PRIOLO F
SPINELLA C
SAGGIO M
CAMPISANO SU
Citation: Kk. Larsen et al., THE DAMAGE RECOVERY AND ELECTRICAL ACTIVATION OF SHALLOW BORON IMPLANTS IN SILICON - THE EFFECTS OF HIGH-ENERGY IMPLANTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 139-143
Authors:
PRIOLO F
SPINELLA C
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
LINDNER JKN
MESLI A
BARKLIE RC
SEALY L
HOLM B
LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
Authors:
SPINELLA C
LOMBARDO S
PRIOLO F
CAMPISANO SU
Citation: C. Spinella et al., MECHANISM AND KINETICS OF THE ION-ASSISTED NUCLEATION IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 53(12), 1996, pp. 7742-7749
Authors:
TERRASI A
RAVESI S
MARCELLINO C
SPINELLA C
PANNITTERI S
Citation: A. Terrasi et al., ION-BEAM-ASSISTED DEPOSITION OF AL FILMS ON SI, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2827-2831
Authors:
LAVIA F
SPINELLA C
RIMINI E
Citation: F. Lavia et al., ARSENIC AND BORON-DIFFUSION IN SILICON FROM IMPLANTED COBALT SILICIDELAYERS, Semiconductor science and technology, 10(10), 1995, pp. 1362-1367
Authors:
RAVESI S
LAVIA F
RAINERI V
SPINELLA C
Citation: S. Ravesi et al., IMPROVED THERMAL-STABILITY OF COBALT SILICIDE FORMED BY ION-BEAM-ASSISTED DEPOSITION ON POLYSILICON, Applied surface science, 91(1-4), 1995, pp. 19-23
Authors:
SPINELLA C
RAINERI V
SAGGIO M
PRIVITERA V
CAMPISANO SU
Citation: C. Spinella et al., 2-DIMENSIONAL PROFILING BY SELECTIVE ETCHING - THE ROLE OF IMPLANT INDUCED SECONDARY DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 139-143
Authors:
BATTAGLIA A
COFFA S
PRIOLO F
SPINELLA C
LIBERTINO S
Citation: A. Battaglia et al., DEFECT EVOLUTION IN ION-IMPLANTED CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 219-222
Authors:
SPINELLA C
RAINERI V
CAMPISANO SU
Citation: C. Spinella et al., SELECTIVE ETCHING OF B-DOPED SILICON - MECHANISMS AND 2-DIMENSIONAL DELINEATION OF CONCENTRATION PROFILES, Journal of the Electrochemical Society, 142(5), 1995, pp. 1601-1607
Authors:
GRIMALDI MG
YAN XS
SCERRA G
RAVESI S
SPINELLA C
Citation: Mg. Grimaldi et al., INFLUENCE OF OXYGEN ON THE FORMATION OF EPITAXIAL ERBIUM SILICIDE FILM ON [111]SI, Applied physics letters, 67(7), 1995, pp. 974-976
Authors:
TERRASI A
RAVESI S
GRIMALDI MG
SPINELLA C
Citation: A. Terrasi et al., ION-BEAM-ASSISTED GROWTH OF BETA-FESI2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 289-294
Authors:
GRIMALDI MG
FRANZO G
RAVESI S
TERRASI A
SPINELLA C
LAMANTIA A
Citation: Mg. Grimaldi et al., FORMATION OF EPITAXIAL GAMMA-FESI(2) AND BETA-FESI(2) LAYERS ON (111)SI, Applied surface science, 74(1), 1994, pp. 19-26
Authors:
PRIOLO F
BENYAICH F
CAMPISANO SU
RIMINI E
SPINELLA C
CACCIATO A
WARD P
FALLICO G
Citation: F. Priolo et al., INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 159-166
Authors:
TERRASI A
RAVESI S
SPINELLA C
GRIMALDI MG
LAMANTIA A
Citation: A. Terrasi et al., MORPHOLOGICAL AND STRUCTURAL STUDIES OF BETA-FESI2 FILMS GROWN BY ION-BEAM-ASSISTED DEPOSITION, Thin solid films, 241(1-2), 1994, pp. 188-191
Authors:
GALVAGNO G
LAFERLA A
SPINELLA C
PRIOLO F
RAINERI V
TORRISI L
RIMINI E
CARNERA A
GASPAROTTO A
Citation: G. Galvagno et al., AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON, Journal of applied physics, 76(4), 1994, pp. 2070-2077
Authors:
BATTAGLIA A
COFFA S
PRIOLO F
SPINELLA C
Citation: A. Battaglia et al., DEFECT ACCUMULATION DURING ION IRRADIATION OF CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS, Applied physics letters, 65(3), 1994, pp. 306-308