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Citation: Q. Guo et al., CHEMICAL SELECTIVITY WITH ESD OF CHLORINATED SILICON SPECIES, Surface science, 358(1-3), 1996, pp. 402-406

Authors: GUO Q STERRATT D WILLIAMS EM

Citation: Q. Guo et al., THE ADSORPTION AND BONDING OF CHLORINE AT SILICON(100) INVESTIGATED USING ESD ESDIAD WITH CL+ AND CL- IONS/, Surface science, 356(1-3), 1996, pp. 75-91

Authors: GUO Q STERRATT D WILLIAMS EM

Citation: Q. Guo et al., NEGATIVE-ION FORMATION FROM SICL4 ADSORBED ON SI(100), Surface science, 352, 1996, pp. 327-331

Authors: GUO Q STERRATT D WILLIAMS EM

Citation: Q. Guo et al., VALENCE EXCITATION AND ESD OF CL+ IONS FROM THE CL SI(100) INTERFACE/, Journal of electron spectroscopy and related phenomena, 72, 1995, pp. 31-36

Authors: STERRATT D GUO Q WILLIAMS EM

Citation: D. Sterratt et al., ESD AND ION ANGULAR-DISTRIBUTIONS OF POSITIVE AND NEGATIVE CHLORINE IONS FROM THE SILICON(100) CHLORINE INTERFACE/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(1-2), 1995, pp. 84-87

Authors: STERRATT D GREENWOOD CL WILLIAMS EM MURYN CA WINCOTT PL THORNTON G ROMAN E

Citation: D. Sterratt et al., THE INTERACTION OF CHLORINE WITH SI(100)2X1 STUDIED USING SOFT-X-RAY PHOTOEMISSION AND PHOTON-STIMULATED ION DESORPTION, Surface science, 309, 1994, pp. 269-273