AAAAAA
Results:
1-19
|
Results: 19
Authors:
STOJADINOVIC N
GOLUBOVIC S
DAVIDOVIC V
DJORICVELJKOVIC S
DIMITRIJEV S
Citation: N. Stojadinovic et al., MODELING RADIATION-INDUCED MOBILITY DEGRADATION IN MOSFETS, Physica status solidi. a, Applied research, 169(1), 1998, pp. 63-66
Authors:
TRAJKOVIC T
IGIC P
STOJADINOVIC N
Citation: T. Trajkovic et al., A NOVEL METHOD FOR EXTRACTION OF VDMOSFET MODEL PARAMETERS USING NEURAL NETWORKS, Microelectronics and reliability, 38(3), 1998, pp. 331-335
Authors:
STOJADINOVIC N
PECHT M
Citation: N. Stojadinovic et M. Pecht, UNTITLED, Microelectronics and reliability, 38(1), 1998, pp. 3-3
Authors:
PANTIC D
TRAJKOVIC T
STOJADINOVIC N
Citation: D. Pantic et al., A NEW TECHNOLOGY COMPUTER-AIDED-DESIGN (TCAD) SYSTEM BASED ON NEURAL-NETWORK MODELS, Microelectronics, 29(1-2), 1998, pp. 1-4
Authors:
STOJADINOVIC N
Citation: N. Stojadinovic, SPECIAL ISSUE ON 21ST INTERNATIONAL-CONFERENCE ON MICROELECTRONICS, Microelectronics, 29(10), 1998, pp. 1-1
Authors:
STOJADINOVIC N
Citation: N. Stojadinovic, SPECIAL ISSUE - ADVANCES IN MICROELECTRONICS - APPROACHING THE MILLENNIUM, Microelectronics and reliability, 37(9), 1997, pp. 3-3
Authors:
STOJADINOVIC N
Citation: N. Stojadinovic, RELIABILITY PHYSICS OF ADVANCED ELECTRON DEVICES, Microelectronics and reliability, 37(7), 1997, pp. 983-984
Authors:
TOSIC N
PESIC B
STOJADINOVIC N
Citation: N. Tosic et al., HIGH-TEMPERATURE-REVERSE-BIAS TESTING OF POWER VDMOS TRANSISTORS, Microelectronics and reliability, 37(10-11), 1997, pp. 1759-1762
Authors:
STOJADINOVIC N
PECHT M
Citation: N. Stojadinovic et M. Pecht, UNTITLED, Microelectronics and reliability, 37(1), 1997, pp. 3-5
Authors:
STAMENKOVIC Z
STOJADINOVIC N
DIMITRIJEV S
Citation: Z. Stamenkovic et al., MODELING OF INTEGRATED-CIRCUIT YIELD LOSS MECHANISMS, IEEE transactions on semiconductor manufacturing, 9(2), 1996, pp. 270-272
Authors:
STOJADINOVIC N
HU CM
Citation: N. Stojadinovic et Cm. Hu, SPECIAL ISSUE - RELIABILITY PHYSICS OF ADVANCED ELECTRON DEVICES, Microelectronics and reliability, 36(7-8), 1996, pp. 843-844
Authors:
PRIJIC Z
IGIC P
PAVLOVIC Z
STOJADINOVIC N
Citation: Z. Prijic et al., SIMPLE METHOD FOR THE EXTRACTION OF POWER VDMOS TRANSISTOR PARAMETERS, Microelectronics, 27(6), 1996, pp. 567-570
Authors:
STOJADINOVIC N
SPIRITO P
Citation: N. Stojadinovic et P. Spirito, POWER SEMICONDUCTOR-DEVICES - CONTINUOUS DEVELOPMENT, Microelectronics, 27(2-3), 1996, pp. 105-107
Authors:
STOJADINOVIC N
GOLUBOVIC S
DJORIC S
DIMITRIJEV S
Citation: N. Stojadinovic et al., ANALYSIS OF GAMMA-IRRADIATION INDUCED DEGRADATION MECHANISMS IN POWERVDMOSFETS, Microelectronics and reliability, 35(3), 1995, pp. 587-602
Authors:
SAVIC Z
RADJENOVIC B
PEJOVIC M
STOJADINOVIC N
Citation: Z. Savic et al., THE CONTRIBUTION OF BORDER TRAPS TO THE THRESHOLD VOLTAGE SHIFT IN PMOS DOSIMETRIC TRANSISTORS, IEEE transactions on nuclear science, 42(4), 1995, pp. 1445-1454
Authors:
STOJADINOVIC N
PEJOVIC M
GOLUBOVIC S
RISTIC G
DAVIDOVIC V
DIMITRIJEV S
Citation: N. Stojadinovic et al., EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS, Electronics Letters, 31(6), 1995, pp. 497-498
Authors:
MITROVIC S
MIJALKOVIC S
STOJADINOVIC N
Citation: S. Mitrovic et al., LOCALLY ONE-DIMENSIONAL APPROACH TO DIFFUSION PROCESS SIMULATION IN NONPLANAR DOMAINS, Electronics Letters, 31(20), 1995, pp. 1788-1789
Authors:
STOJADINOVIC N
DJORIC S
GOLUBOVIC S
DAVIDOVIC V
Citation: N. Stojadinovic et al., SEPARATION OF IRRADIATION-INDUCED GATE OXIDE CHARGE AND INTERFACE D-TRAPS EFFECTS IN POWER VD-MOSFETS, Electronics Letters, 30(23), 1994, pp. 1992-1993
Authors:
PRIJIC Z
PAVLOVIC Z
RISTIC S
STOJADINOVIC N
Citation: Z. Prijic et al., ZERO-TEMPERATURE-COEFFICIENT (ZTC) BIASING OF POWER VDMOS TRANSISTORS, Electronics Letters, 29(5), 1993, pp. 435-437
Risultati:
1-19
|