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Results: 51-75/100
Authors:
NEBEL CE
ROTHER M
STUTZMANN M
SUMMONTE C
HEINTZE M
Citation: Ce. Nebel et al., THE SIGN OF THE HALL-EFFECT IN HYDROGENATED AMORPHOUS AND DISORDERED CRYSTALLINE SILICON, Philosophical magazine letters, 74(6), 1996, pp. 455-463
Authors:
NEBEL CE
DAHLHEIMER B
SCHONIGER S
STUTZMANN M
Citation: Ce. Nebel et al., SUBMICRON SILICON STRUCTURES FOR THIN-FILM SOLAR-CELLS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 55-67
Authors:
METZGER T
ANGERER H
AMBACHER O
STUTZMANN M
BORN E
Citation: T. Metzger et al., X-RAY-DIFFRACTION STUDY OF GALLIUM NITRIDE GROWN BY MOCVD, Physica status solidi. b, Basic research, 193(2), 1996, pp. 391-397
Authors:
ROSSI MC
BRANDT MS
STUTZMANN M
Citation: Mc. Rossi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS SILICON-OXIDE WITH VISIBLE ROOM-TEMPERATURE PHOTOLUMINESCENCE, Applied surface science, 102, 1996, pp. 323-326
Authors:
RIEGER W
DIMITROV R
BRUNNER D
ROHRER E
AMBACHER O
STUTZMANN M
Citation: W. Rieger et al., DEFECT-RELATED OPTICAL-TRANSITIONS IN GAN, Physical review. B, Condensed matter, 54(24), 1996, pp. 17596-17602
Authors:
ROHRER E
GRAEFF CFO
JANSSEN R
NEBEL CE
STUTZMANN M
GUTTLER H
ZACHAI R
Citation: E. Rohrer et al., NITROGEN-RELATED DOPANT AND DEFECT STATES IN CVD DIAMOND, Physical review. B, Condensed matter, 54(11), 1996, pp. 7874-7880
Authors:
KAWACHI G
GRAEFF CFO
BRANDT MS
STUTZMANN M
Citation: G. Kawachi et al., CARRIER TRANSPORT IN AMORPHOUS SILICON-BASED THIN-FILM TRANSISTORS STUDIED BY SPIN-DEPENDENT TRANSPORT, Physical review. B, Condensed matter, 54(11), 1996, pp. 7957-7964
Authors:
AMBACHER O
RIEGER W
ANSMANN P
ANGERER H
MOUSTAKAS TD
STUTZMANN M
Citation: O. Ambacher et al., SUB-BANDGAP ABSORPTION OF GALLIUM NITRIDE DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, Solid state communications, 97(5), 1996, pp. 365-370
Authors:
DEMIERRY P
AMBACHER O
KRATZER H
STUTZMANN M
Citation: P. Demierry et al., YELLOW LUMINESCENCE AND HYDROCARBON CONTAMINATION IN MOVPE-GROWN GAN, Physica status solidi. a, Applied research, 158(2), 1996, pp. 587-597
Authors:
GRAEFF CFO
KAWACHI G
BRANDT MS
STUTZMANN M
POWELL MJ
Citation: Cfo. Graeff et al., SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 200, 1996, pp. 1117-1120
Authors:
AMBACHER O
DIMITROV R
LENTZ D
METZGER T
RIEGER W
STUTZMANN M
Citation: O. Ambacher et al., GROWTH OF GAN ALN BY LOW-PRESSURE MOCVD USING TRIETHYLGALLIUM AND TRITERTBUTYLALUMINIUM/, Journal of crystal growth, 167(1-2), 1996, pp. 1-7
Authors:
REINACHER NM
BRANDT MS
STUTZMANN M
Citation: Nm. Reinacher et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS OF GALLIUM-PHOSPHIDE GREEN LIGHT-EMITTING-DIODES, Journal of applied physics, 80(8), 1996, pp. 4541-4547
Authors:
GRAEFF CFO
STUTZMANN M
MIYAZAKI S
Citation: Cfo. Graeff et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN A-SI-H A-GE-H MULTILAYERS/, Journal of applied physics, 79(12), 1996, pp. 9166-9171
Authors:
GRAEFF CFO
ROHRER E
NEBEL CE
STUTZMANN M
GUTTLER H
ZACHAI R
Citation: Cfo. Graeff et al., OPTICAL-EXCITATION OF PARAMAGNETIC NITROGEN IN CHEMICAL-VAPOR-DEPOSITED DIAMOND, Applied physics letters, 69(21), 1996, pp. 3215-3217
Authors:
KELLY MK
AMBACHER O
DAHLHEIMER B
GROOS G
DIMITROV R
ANGERER H
STUTZMANN M
Citation: Mk. Kelly et al., OPTICAL PATTERNING OF GAN FILMS, Applied physics letters, 69(12), 1996, pp. 1749-1751
Authors:
RIEGER W
METZGER T
ANGERER H
DIMITROV R
AMBACHER O
STUTZMANN M
Citation: W. Rieger et al., INFLUENCE OF SUBSTRATE-INDUCED BIAXIAL COMPRESSIVE STRESS ON THE OPTICAL-PROPERTIES OF THIN GAN FILMS, Applied physics letters, 68(7), 1996, pp. 970-972
Authors:
KELLY MK
NEBEL CE
STUTZMANN M
BOHM G
Citation: Mk. Kelly et al., LATERAL STRUCTURING OF III-V QUANTUM-WELL SYSTEMS WITH PULSED-LASER-INDUCED TRANSIENT THERMAL GRATINGS, Applied physics letters, 68(14), 1996, pp. 1984-1986
Authors:
STUTZMANN M
Citation: M. Stutzmann, OPTICAL-PROPERTIES OF SILICON NANOSTRUCTURES, Physica status solidi. b, Basic research, 192(2), 1995, pp. 273-286
Authors:
STUTZMANN M
BRANDT MS
Citation: M. Stutzmann et Ms. Brandt, RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CANWE LEARN FROM SPIN-RESONANCE, Physica status solidi. b, Basic research, 190(1), 1995, pp. 97-106
Authors:
ROSENBAUER M
HOPNER A
DETTLAFFWEGLIKOWSKA U
STUTZMANN M
Citation: M. Rosenbauer et al., TRANSPORT-PROPERTIES OF SILOXENE, Physica status solidi. b, Basic research, 190(1), 1995, pp. 107-110
Authors:
GRAEFF CFO
BRANDT MS
STUTZMANN M
POWELL MJ
Citation: Cfo. Graeff et al., DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS, Physical review. B, Condensed matter, 52(7), 1995, pp. 4680-4683
Authors:
ROSENBAUER M
FINKBEINER S
BUSTARRET E
WEBER J
STUTZMANN M
Citation: M. Rosenbauer et al., RESONANTLY EXCITED PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON, Physical review. B, Condensed matter, 51(16), 1995, pp. 10539-10547
Authors:
DEAK P
HAJNAL Z
STUTZMANN M
FUCHS HD
Citation: P. Deak et al., CORRELATION BETWEEN THE LUMINESCENCE AND RAMAN PEAKS IN QUANTUM-CONFINED SYSTEMS, Thin solid films, 255(1-2), 1995, pp. 241-245
Authors:
ROSENBAUER M
LEACH DH
SENDOVAVASSILEVA M
FINKBEINER S
STUTZMANN M
Citation: M. Rosenbauer et al., RESONANTLY EXCITED PHOTOLUMINESCENCE IN POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 250-253
Authors:
SENDOVAVASSILEVA M
TZENOV N
DIMOVAMALINOVSKA D
ROSENBAUER M
STUTZMANN M
JOSEPOVITS KV
Citation: M. Sendovavassileva et al., STRUCTURAL AND LUMINESCENCE STUDIES OF STAIN-ETCHED AND ELECTROCHEMICALLY ETCHED GERMANIUM, Thin solid films, 255(1-2), 1995, pp. 282-285