AAAAAA

   
Results: 1-20 |
Results: 20
A NEW TECHNIQUE FOR DETERMINING LONG-TERM TDDB ACCELERATION PARAMETERS OF THIN GATE OXIDES
Authors: CHEN Y SUEHLE JS SHEN CC BERNSTEIN JB MESSICK C CHAPARALA P
Citation: Y. Chen et al., A NEW TECHNIQUE FOR DETERMINING LONG-TERM TDDB ACCELERATION PARAMETERS OF THIN GATE OXIDES, IEEE electron device letters, 19(7), 1998, pp. 219-221
IN-SITU CONDUCTIVITY CHARACTERIZATION OF OXIDE THIN-FILM GROWTH PHENOMENA ON MICROHOTPLATES
Authors: DIMEO F CAVICCHI RE SEMANCIK S SUEHLE JS TEA NH SMALL J ARMSTRONG JT KELLIHER JT
Citation: F. Dimeo et al., IN-SITU CONDUCTIVITY CHARACTERIZATION OF OXIDE THIN-FILM GROWTH PHENOMENA ON MICROHOTPLATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 131-138
INVESTIGATION OF THE INTRINSIC SIO2 AREA DEPENDENCE USING TDDB TESTING AND MODEL INTEGRATION INTO THE DESIGN PROCESS
Authors: PRENDERGAST J FOLEY N SUEHLE JS
Citation: J. Prendergast et al., INVESTIGATION OF THE INTRINSIC SIO2 AREA DEPENDENCE USING TDDB TESTING AND MODEL INTEGRATION INTO THE DESIGN PROCESS, Microelectronics and reliability, 38(6-8), 1998, pp. 1121-1125
HYBRID POSTPROCESSING ETCHING FOR CMOS-COMPATIBLE MEMS
Authors: TEA NH MILANOVIC V ZINCKE CA SUEHLE JS GAITAN M ZAGHLOUL ME GEIST J
Citation: Nh. Tea et al., HYBRID POSTPROCESSING ETCHING FOR CMOS-COMPATIBLE MEMS, Journal of microelectromechanical systems, 6(4), 1997, pp. 363-372
THE OPTIMIZATION OF THE DOUBLE MASK SYSTEM TO MINIMIZE THE CONTACT RESISTANCE OF A TI PT/AU CONTACT/
Authors: WAYTENA GL HOFF HA ISAACSON IP REBBERT ML MA DI MARRIAN C SUEHLE JS
Citation: Gl. Waytena et al., THE OPTIMIZATION OF THE DOUBLE MASK SYSTEM TO MINIMIZE THE CONTACT RESISTANCE OF A TI PT/AU CONTACT/, Journal of electronic materials, 26(2), 1997, pp. 90-96
INVESTIGATION OF THE INFLUENCE OF RAMPED VOLTAGE STRESS ON INTRINSIC T(BD) OF MOS GATE OXIDES
Authors: MARTIN A OSULLIVAN P MATHEWSON A SUEHLE JS CHAPARALA P
Citation: A. Martin et al., INVESTIGATION OF THE INFLUENCE OF RAMPED VOLTAGE STRESS ON INTRINSIC T(BD) OF MOS GATE OXIDES, Solid-state electronics, 41(7), 1997, pp. 1013-1020
HARDNESS ASSURANCE TESTING OF BIPOLAR JUNCTION TRANSISTORS AT ELEVATED IRRADIATION TEMPERATURES
Authors: WITCZAK SC SCHRIMPF RD FLEETWOOD DM GALLOWAY KF LACOE RC MAYER DC PUHL JM PEASE RL SUEHLE JS
Citation: Sc. Witczak et al., HARDNESS ASSURANCE TESTING OF BIPOLAR JUNCTION TRANSISTORS AT ELEVATED IRRADIATION TEMPERATURES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1989-2000
LOW ELECTRIC-FIELD BREAKDOWN OF THIN SIO2-FILMS UNDER STATIC AND DYNAMIC STRESS
Authors: SUEHLE JS CHAPARALA P
Citation: Js. Suehle et P. Chaparala, LOW ELECTRIC-FIELD BREAKDOWN OF THIN SIO2-FILMS UNDER STATIC AND DYNAMIC STRESS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 801-808
OHMIC CONTACTS TO SEMICONDUCTING DIAMOND USING A TI PT/AU TRILAYER METALLIZATION SCHEME/
Authors: HOFF HA WAYTENA GL VOLD CL SUEHLE JS ISAACSON IP REBBERT ML MA DI HARRIS K
Citation: Ha. Hoff et al., OHMIC CONTACTS TO SEMICONDUCTING DIAMOND USING A TI PT/AU TRILAYER METALLIZATION SCHEME/, DIAMOND AND RELATED MATERIALS, 5(12), 1996, pp. 1450-1456
SELECTED-AREA DEPOSITION OF MULTIPLE ACTIVE FILMS FOR CONDUCTOMETRIC MICROSENSOR ARRAYS
Authors: SEMANCIK S CAVICCHI RE KREIDER KG SUEHLE JS CHAPARALA P
Citation: S. Semancik et al., SELECTED-AREA DEPOSITION OF MULTIPLE ACTIVE FILMS FOR CONDUCTOMETRIC MICROSENSOR ARRAYS, Sensors and actuators. B, Chemical, 34(1-3), 1996, pp. 209-212
OPTIMIZED TEMPERATURE-PULSE SEQUENCES FOR THE ENHANCEMENT OF CHEMICALLY SPECIFIC RESPONSE PATTERNS FROM MICRO-HOTPLATE GAS SENSORS
Authors: CAVICCHI RE SUEHLE JS KREIDER KG GAITAN M CHAPARALA P
Citation: Re. Cavicchi et al., OPTIMIZED TEMPERATURE-PULSE SEQUENCES FOR THE ENHANCEMENT OF CHEMICALLY SPECIFIC RESPONSE PATTERNS FROM MICRO-HOTPLATE GAS SENSORS, Sensors and actuators. B, Chemical, 33(1-3), 1996, pp. 142-146
CHARACTERIZATION OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN IN INTRINSIC THIN SIO2
Authors: SUEHLE JS CHAPARALA P
Citation: Js. Suehle et P. Chaparala, CHARACTERIZATION OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN IN INTRINSIC THIN SIO2, Microelectronics, 27(7), 1996, pp. 657-665
ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS
Authors: WITCZAK SC SCHRIMPF RD GALLOWAY KF FLEETWOOD DM PEASE RL PUHL JM SCHMIDT DM COMBS WE SUEHLE JS
Citation: Sc. Witczak et al., ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3151-3160
THE USE OF A DOUBLE MASK SYSTEM TO PREVENT TI DIFFUSION FROM A TI PT/AU OHMIC CONTACT ON DIAMOND/
Authors: WAYTENA GL HOFF HA MA DI ISAACSON IP REBBERT ML MARRIAN C SUEHLE JS
Citation: Gl. Waytena et al., THE USE OF A DOUBLE MASK SYSTEM TO PREVENT TI DIFFUSION FROM A TI PT/AU OHMIC CONTACT ON DIAMOND/, Journal of the Electrochemical Society, 143(7), 1996, pp. 2392-2395
FAST TEMPERATURE-PROGRAMMED SENSING FOR MICRO-HOTPLATE GAS SENSORS
Authors: CAVICCHI RE SUEHLE JS KREIDER KG GAITAN M CHAPARALA P
Citation: Re. Cavicchi et al., FAST TEMPERATURE-PROGRAMMED SENSING FOR MICRO-HOTPLATE GAS SENSORS, IEEE electron device letters, 16(6), 1995, pp. 286-288
RELAXATION OF SI-SIO2 INTERFACIAL STRESS IN BIPOLAR SCREEN OXIDES DUETO IONIZING-RADIATION
Authors: WITCZAK SC GALLOWAY KF SCHRIMPF RD SUEHLE JS
Citation: Sc. Witczak et al., RELAXATION OF SI-SIO2 INTERFACIAL STRESS IN BIPOLAR SCREEN OXIDES DUETO IONIZING-RADIATION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1689-1697
GROWTH OF SNO2 FILMS ON MICROMACHINED HOTPLATES
Authors: CAVICCHI RE SUEHLE JS KREIDER KG SHOMAKER BL SMALL JA GAITAN M CHAPARALA P
Citation: Re. Cavicchi et al., GROWTH OF SNO2 FILMS ON MICROMACHINED HOTPLATES, Applied physics letters, 66(7), 1995, pp. 812-814
PULSED DESORPTION-KINETICS USING MICROMACHINED MICROHOTPLATE ARRAYS
Authors: CAVICCHI RE POIRIER GE SUEHLE JS GAITAN M SEMANCIK S BURGESS DRF
Citation: Re. Cavicchi et al., PULSED DESORPTION-KINETICS USING MICROMACHINED MICROHOTPLATE ARRAYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2549-2553
THE INTERACTION OF STOICHIOMETRY, MECHANICAL-STRESS, AND INTERFACE-TRAP DENSITY IN LPCVD SI-RICH SINX-SI STRUCTURES
Authors: WITCZAK SC GAITAN M SUEHLE JS PECKERAR MC MA DI
Citation: Sc. Witczak et al., THE INTERACTION OF STOICHIOMETRY, MECHANICAL-STRESS, AND INTERFACE-TRAP DENSITY IN LPCVD SI-RICH SINX-SI STRUCTURES, Solid-state electronics, 37(10), 1994, pp. 1695-1704
BREAKDOWN MECHANISM IN BURIED SILICON-OXIDE FILMS
Authors: MAYO S SUEHLE JS ROITMAN P
Citation: S. Mayo et al., BREAKDOWN MECHANISM IN BURIED SILICON-OXIDE FILMS, Journal of applied physics, 74(6), 1993, pp. 4113-4120
Risultati: 1-20 |