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Results: 1-13 |
Results: 13
CMOS-ON-SOI ESD PROTECTION NETWORKS
Authors: VOLDMAN S SCHULZ R HOWARD J GROSS V WU S YAPSIR A SADANA D HOVEL H WALKER J ASSADERAGHI F CHEN B SUN JYC SHAHIDI G
Citation: S. Voldman et al., CMOS-ON-SOI ESD PROTECTION NETWORKS, Journal of electrostatics, 42(4), 1998, pp. 333-350
CHARACTERISTICS OF SOI FETS UNDER PULSED CONDITIONS
Authors: JENKINS KA SUN JYC GAUTIER J
Citation: Ka. Jenkins et al., CHARACTERISTICS OF SOI FETS UNDER PULSED CONDITIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1923-1930
HISTORY DEPENDENCE OF OUTPUT CHARACTERISTICS OF SILICON-ON-INSULATOR (SOI) MOSFETS
Authors: JENKINS KA SUN JYC GAUTIER J
Citation: Ka. Jenkins et al., HISTORY DEPENDENCE OF OUTPUT CHARACTERISTICS OF SILICON-ON-INSULATOR (SOI) MOSFETS, IEEE electron device letters, 17(1), 1996, pp. 7-9
MEASUREMENT OF I-V CURVES OF SILICON-ON-INSULATOR (SOI) MOSFETS WITHOUT SELF-HEATING
Authors: JENKINS KA SUN JYC
Citation: Ka. Jenkins et Jyc. Sun, MEASUREMENT OF I-V CURVES OF SILICON-ON-INSULATOR (SOI) MOSFETS WITHOUT SELF-HEATING, IEEE electron device letters, 16(4), 1995, pp. 145-147
ON THE TRANSIENT OPERATION OF PARTIALLY DEPLETED SOI NMOSFETS
Authors: GAUTIER J SUN JYC
Citation: J. Gautier et Jyc. Sun, ON THE TRANSIENT OPERATION OF PARTIALLY DEPLETED SOI NMOSFETS, IEEE electron device letters, 16(11), 1995, pp. 497-499
SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 455-468
SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 469-482
CMOS SCALING IN THE 0.1-MU-M, 1.X-VOLT REGIME FOR HIGH-PERFORMANCE APPLICATIONS
Authors: SHAHIDI GG WARNOCK JD COMFORT J FISCHER S MCFARLAND PA ACOVIC A CHAPPELL TI CHAPPELL BA NING TH ANDERSON CJ DENNARD RH SUN JYC POLCARI MR DAVARI B
Citation: Gg. Shahidi et al., CMOS SCALING IN THE 0.1-MU-M, 1.X-VOLT REGIME FOR HIGH-PERFORMANCE APPLICATIONS, IBM journal of research and development, 39(1-2), 1995, pp. 229-244
AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION
Authors: CRESSLER JD CRABBE EF COMFORT JH SUN JYC STORK JMC
Citation: Jd. Cressler et al., AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION, IEEE electron device letters, 15(11), 1994, pp. 472-474
RESOLVING THE MECHANISMS OF CURRENT GAIN INCREASE UNDER FORWARD CURRENT STRESS IN POLYEMITTER N-P-N TRANSISTORS
Authors: ZHAO J LI GP LIAO KY CHIN MR SUN JYC LADUCA A
Citation: J. Zhao et al., RESOLVING THE MECHANISMS OF CURRENT GAIN INCREASE UNDER FORWARD CURRENT STRESS IN POLYEMITTER N-P-N TRANSISTORS, IEEE electron device letters, 14(5), 1993, pp. 252-255
HIGH-PERFORMANCE DEVICES FOR A 0.15-MU-M CMOS TECHNOLOGY
Authors: SHAHIDI GG WARNOCK J FISCHER S MCFARLAND PA ACOVIC A SUBBANNA S GANIN E CRABBE E COMFORT J SUN JYC NING TH DAVARI B
Citation: Gg. Shahidi et al., HIGH-PERFORMANCE DEVICES FOR A 0.15-MU-M CMOS TECHNOLOGY, IEEE electron device letters, 14(10), 1993, pp. 466-468
HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS
Authors: CRABBE EF COMFORT JH CRESSLER JD SUN JYC STORK JMC
Citation: Ef. Crabbe et al., HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS, IEEE electron device letters, 14(10), 1993, pp. 478-480
OBSERVATION OF ELECTROMIGRATION OF HYDROGEN IN POLYCRYSTALLINE SILICON USING POLY EMITTER BIPOLAR-TRANSISTORS
Authors: ZHAO J LI GP LIAO KY CHIN MR SUN JYC
Citation: J. Zhao et al., OBSERVATION OF ELECTROMIGRATION OF HYDROGEN IN POLYCRYSTALLINE SILICON USING POLY EMITTER BIPOLAR-TRANSISTORS, Applied physics letters, 62(23), 1993, pp. 2950-2952
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