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Results: 1-9 |
Results: 9
OPTICAL-ABSORPTION OF UN-IMPLANTED AND IMPLANTED HGCDTE
Authors: MAO DH SYLLAIOS AJ ROBINSON HG HELMS CR
Citation: Dh. Mao et al., OPTICAL-ABSORPTION OF UN-IMPLANTED AND IMPLANTED HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 703-708
PREPARATION OF ZNSE LIGHT-EMITTING-DIODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRISDIMETHYLAMINOARSINE AS A P-TYPE DOPING SOURCE
Authors: BEVAN MJ SHIH HD DODGE JA SYLLAIOS AJ WEIRAUCH DF
Citation: Mj. Bevan et al., PREPARATION OF ZNSE LIGHT-EMITTING-DIODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRISDIMETHYLAMINOARSINE AS A P-TYPE DOPING SOURCE, Journal of electronic materials, 27(6), 1998, pp. 769-771
APPLICATION OF URBACH-RULE OPTICAL-ABSORPTION TO COMPOSITION MEASUREMENT OF CD1-YZNYTE
Authors: SYLLAIOS AJ LIAO PK GREENE BJ SCHAAKE HF LIU HY WESTPHAL G
Citation: Aj. Syllaios et al., APPLICATION OF URBACH-RULE OPTICAL-ABSORPTION TO COMPOSITION MEASUREMENT OF CD1-YZNYTE, Journal of electronic materials, 26(6), 1997, pp. 567-570
MAGNETOOPTICAL ROTATION SPECTRUM OF SEMICONDUCTORS
Authors: MCDONALD JK CHRISTENSEN CR GRISHAM JA TANTON GA SYLLAIOS AJ
Citation: Jk. Mcdonald et al., MAGNETOOPTICAL ROTATION SPECTRUM OF SEMICONDUCTORS, Mikrochimica acta, 1997, pp. 475-477
GROWTH OF HIGH-QUALITY ZNSE ON CLOSELY LATTICE-MATCHED INGAAS SUBSTRATES BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BEVAN MJ SHIH HD LIU HY SYLLAIOS AJ DUNCAN WM
Citation: Mj. Bevan et al., GROWTH OF HIGH-QUALITY ZNSE ON CLOSELY LATTICE-MATCHED INGAAS SUBSTRATES BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 170(1-4), 1997, pp. 467-471
A COMPARISON OF TECHNIQUES FOR NONDESTRUCTIVE COMPOSITION MEASUREMENTS IN CDZNTE SUBSTRATES
Authors: TOBIN SP TOWER JP NORTON PW CHANDLERHOROWITZ D AMIRTHARAJ PM LOPES VC DUNCAN WM SYLLAIOS AJ ARD CK GILES NC LEE J BALASUBRAMANIAN R BOLLONG AB STEINER TW THEWALT MLW BOWEN DK TANNER BK
Citation: Sp. Tobin et al., A COMPARISON OF TECHNIQUES FOR NONDESTRUCTIVE COMPOSITION MEASUREMENTS IN CDZNTE SUBSTRATES, Journal of electronic materials, 24(5), 1995, pp. 697-705
THE EFFECT OF DEEP LEVELS ON LIFETIMES IN HG1-XCDXTE
Authors: LITTLER CL SYLLAIOS AJ LOPES VC
Citation: Cl. Littler et al., THE EFFECT OF DEEP LEVELS ON LIFETIMES IN HG1-XCDXTE, Progress in crystal growth and characterization of materials, 28(1-2), 1994, pp. 145-164
MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE
Authors: LOPES VC SYLLAIOS AJ CHEN MC
Citation: Vc. Lopes et al., MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE, Semiconductor science and technology, 8(6), 1993, pp. 824-841
FARADAY-ROTATION ANALYSIS OF HGCDTE
Authors: SYLLAIOS AJ LITTLER CL SONG XN LOPES VC CHRISTENSEN CR GRISHAM JA CLARKE FW
Citation: Aj. Syllaios et al., FARADAY-ROTATION ANALYSIS OF HGCDTE, Semiconductor science and technology, 8(6), 1993, pp. 953-957
Risultati: 1-9 |