ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

RF PLASMA CLEANING OF THE OXIDE SURFACE AS A POSSIBILITY FOR CONTAMINATION CONTROL IN MOS STRUCTURES

Authors: ALEXANDROVA S SZEKERES A

Citation: S. Alexandrova et A. Szekeres, RF PLASMA CLEANING OF THE OXIDE SURFACE AS A POSSIBILITY FOR CONTAMINATION CONTROL IN MOS STRUCTURES, Vacuum, 51(3), 1998, pp. 469-472

CRYSTALLIZATION OF A-SI-H FILMS BY RAPID THERMAL ANNEALING

Authors: SZEKERES A GARTNER M VASILIU F MARINOV M BESHKOV G

Citation: A. Szekeres et al., CRYSTALLIZATION OF A-SI-H FILMS BY RAPID THERMAL ANNEALING, Journal of non-crystalline solids, 230, 1998, pp. 954-957

POSITRON STUDIES OF PLASMA-TREATED SILICON-WAFERS

Authors: VANDERWERF DP NATHWANI M TOWNER A TAYLOR JW MORTON R KNIGHTS AP RICEEVANS PC SZEKERES A

Citation: Dp. Vanderwerf et al., POSITRON STUDIES OF PLASMA-TREATED SILICON-WAFERS, Applied surface science, 116, 1997, pp. 228-230

MECHANICAL-STRESS IN SIO2 SI STRUCTURES FORMED BY THERMAL-OXIDATION OF AMORPHOUS AND CRYSTALLINE SILICON/

Authors: SZEKERES A DANESH P

Citation: A. Szekeres et P. Danesh, MECHANICAL-STRESS IN SIO2 SI STRUCTURES FORMED BY THERMAL-OXIDATION OF AMORPHOUS AND CRYSTALLINE SILICON/, Semiconductor science and technology, 11(8), 1996, pp. 1225-1230

LOW-TEMPERATURE TREATMENT OF SI SIO2 STRUCTURES IN AN RF HYDROGEN PLASMA/

Authors: SZEKERES A ALEXANDROVA S

Citation: A. Szekeres et S. Alexandrova, LOW-TEMPERATURE TREATMENT OF SI SIO2 STRUCTURES IN AN RF HYDROGEN PLASMA/, Vacuum, 47(12), 1996, pp. 1483-1486

OXIDATION OF A-SI-H (SI SIO2 INTERFACE PROPERTIES)/

Authors: DANESH P SZEKERES A KASCHIEVA S

Citation: P. Danesh et al., OXIDATION OF A-SI-H (SI SIO2 INTERFACE PROPERTIES)/, Solid-state electronics, 38(6), 1995, pp. 1179-1182

OXIDATION OF AMORPHOUS AND CRYSTALLINE SILICON

Authors: SZEKERES A DANESH P

Citation: A. Szekeres et P. Danesh, OXIDATION OF AMORPHOUS AND CRYSTALLINE SILICON, Journal of non-crystalline solids, 187, 1995, pp. 45-48

ELECTRICAL-PROPERTIES OF HYDROGEN-RICH SI SIO2 STRUCTURES/

Authors: DANESH P SZEKERES A

Citation: P. Danesh et A. Szekeres, ELECTRICAL-PROPERTIES OF HYDROGEN-RICH SI SIO2 STRUCTURES/, Journal of non-crystalline solids, 187, 1995, pp. 270-272

DLTS STUDY OF DEEP LEVELS IN SI SUBSTRATES CREATED BY PLASMA TREATMENT

Authors: SZEKERES A SIMEONOV SS KAFEDJIISKA E

Citation: A. Szekeres et al., DLTS STUDY OF DEEP LEVELS IN SI SUBSTRATES CREATED BY PLASMA TREATMENT, Semiconductor science and technology, 9(10), 1994, pp. 1795-1799

ELLIPSOMETRIC APPROACH FOR EVALUATION OF OPTICAL-PARAMETERS IN THIN MULTILAYER STRUCTURES

Authors: PANEVA A SZEKERES A

Citation: A. Paneva et A. Szekeres, ELLIPSOMETRIC APPROACH FOR EVALUATION OF OPTICAL-PARAMETERS IN THIN MULTILAYER STRUCTURES, Surface and interface analysis, 20(4), 1993, pp. 290-294

DEEP LEVELS IN N-TYPE SI SUBSTRATES TREATED IN O-2 PLASMA

Authors: SIMEONOV SS SZEKERES A KAFEDJIISKA E

Citation: Ss. Simeonov et al., DEEP LEVELS IN N-TYPE SI SUBSTRATES TREATED IN O-2 PLASMA, Physica status solidi. a, Applied research, 140(1), 1993, pp. 25-29

STRESS CHARACTERIZATION OF RF-SPUTTERED AL2O3

Authors: CHRISTOVA K SZEKERES A

Citation: K. Christova et A. Szekeres, STRESS CHARACTERIZATION OF RF-SPUTTERED AL2O3, Semiconductor science and technology, 6(8), 1991, pp. 748-751

Risultati: 1-12 |